• Title/Summary/Keyword: Frequency selectivity

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A study on the Frequency Analysis Function of the Auricle Using A Notch Filter

  • Park, Dong-Cheol
    • International journal of advanced smart convergence
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    • v.10 no.4
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    • pp.241-255
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    • 2021
  • The human auricle is the first part to receive sound from the outside. In this part, the frequency range of human recognizable form is divided and organized. In this study, we propose modeling by applying a single sound source to the surface of the human auricle. This means that when the sound pressure of a low frequency (low frequency) sound enters the pinna, the impedance felt at the tip of a part of the non-linear surface of the pinna is mainly due to the tensile force at the end of the part of the non-linear surface of the pinna. By expressing the situation of moving at a very small speed, the characteristic impedance of the pinna was confirmed to be negative infinity, and it was also confirmed that the speed at the tip of a part of the non-linear surface of the pinna was 0 in the anti-resonance state. It was found that the wave propagation phenomenon that determines the characteristics of the filter is determined by how large the wavelength, kL, is compared to the length of the tip of a part of the non-straight surface of the pinna. Humans first receive sounds from outside through their ears. The auricle is non-linear and has a curved shape, and it is known that it analyzes frequencies while receiving external sounds. The human ear has an audible frequency range of 20Hz - 20,000Hz. Through the study, we applied the characteristics of the notch filter to hypothesize that the human audible frequency range is separated from the auricle, and applied filter theory to analyze it, and as a result, meaningful results were obtained. The curved part and the inner part of the auricle function as a trumpet, collecting sounds, and at the same time amplifying the weak sound of a specific band. The point was found and the shape of the envelope detected in the auricle was found. Selectivity for selecting sounds coming from the outside is the formula of the pinna that implements the function of Q. The function of distinguishing human-recognizable sound from the pinna from low to high through frequency analysis is performed in the pinna, and the 2-3kHz area, where human hearing threshold is the most sensitive, is also the acoustic impedance of the most recessed area of the pinna. It can be seen that starting from.

High Conversion Gain and Isolation Characteristic V-band Quadruple Sub-harmonic Mixer (고 변환이득 및 격리 특성의 V-band용 4체배 Sub-harmonic Mixer)

  • Uhm, Won-Young;Sul, Woo-Suk;Han, Hyo-Jong;Kim, Sung-Chan;Lee, Han-Shin;An, Dan;Kim, Sam-Dong;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.7
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    • pp.293-299
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    • 2003
  • In this paper, we have proposed a high conversion and isolation characteristic V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While most of the sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on a sub-harmonic mixer with APDP(anti-parallel diode pair) and the 0.1 ${\mu}{\textrm}{m}$ PHEMT's (pseudomorphic high electron mobility transistors). Lumped elements at IF port provide better selectivity of IF frequency and increase isolation. Maximum conversion gain of 0.8 ㏈ at a LO frequency of 14.5㎓ and at a RF frequency of 60.4 ㎓ is measured. Both LO-to-RF and LO-to-IF isolations are higher than 50 ㏈. The conversion gain and isolation characteristic are the best performances among the reported quadruple sub-harmonic mixer operating in the V-band millimeter wave frequency thus far.

GNSS Software Receivers: Sampling and jitter considerations for multiple signals

  • Amin, Bilal;Dempster, Andrew G.
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • v.2
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    • pp.385-390
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    • 2006
  • This paper examines the sampling and jitter specifications and considerations for Global Navigation Satellite Systems (GNSS) software receivers. Software radio (SWR) technologies are being used in the implementation of communication receivers in general and GNSS receivers in particular. With the advent of new GPS signals, and a range of new Galileo and GLONASS signals soon becoming available, GNSS is an application where SWR and software-defined radio (SDR) are likely to have an impact. The sampling process is critical for SWR receivers, where it occurs as close to the antenna as possible. One way to achieve this is by BandPass Sampling (BPS), which is an undersampling technique that exploits aliasing to perform downconversion. BPS enables removal of the IF stage in the radio receiver. The sampling frequency is a very important factor since it influences both receiver performance and implementation efficiency. However, the design of BPS can result in degradation of Signal-to-Noise Ratio (SNR) due to the out-of-band noise being aliased. Important to the specification of both the ADC and its clocking Phase- Locked Loop (PLL) is jitter. Contributing to the system jitter are the aperture jitter of the sample-and-hold switch at the input of ADC and the sampling-clock jitter. Aperture jitter effects have usually been modeled as additive noise, based on a sinusoidal input signal, and limits the achievable Signal-to-Noise Ratio (SNR). Jitter in the sampled signal has several sources: phase noise in the Voltage-Controlled Oscillator (VCO) within the sampling PLL, jitter introduced by variations in the period of the frequency divider used in the sampling PLL and cross-talk from the lock line running parallel to signal lines. Jitter in the sampling process directly acts to degrade the noise floor and selectivity of receiver. Choosing an appropriate VCO for a SWR system is not as simple as finding one with right oscillator frequency. Similarly, it is important to specify the right jitter performance for the ADC. In this paper, the allowable sampling frequencies are calculated and analyzed for the multiple frequency BPS software radio GNSS receivers. The SNR degradation due to jitter in a BPSK system is calculated and required jitter standard deviation allowable for each GNSS band of interest is evaluated. Furthermore, in this paper we have investigated the sources of jitter and a basic jitter budget is calculated that could assist in the design of multiple frequency SWR GNSS receivers. We examine different ADCs and PLLs available in the market and compare known performance with the calculated budget. The results obtained are therefore directly applicable to SWR GNSS receiver design.

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Modeling and Characterization of Low Voltage Access Network for Narrowband Powerline Communications

  • Masood, Bilal;Haider, Arsalan;Baig, Sobia
    • Journal of Electrical Engineering and Technology
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    • v.12 no.1
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    • pp.443-450
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    • 2017
  • Nowadays, Power Line Communication (PLC) is gaining high attention from industry and electric supply companies for the services like demand response, demand side management and Advanced Metering Infrastructure (AMI). The reliable services to consumers using PLC can be provided by utilizing an efficient PLC channel for which sophisticated channel modeling is very important. This paper presents characterization of a Low Voltage (LV) access network for Narrowband Power Line Communications (NB-PLC) using transmission line (TL) theory and a Simulink model. The TL theory analysis not only includes the constant parameters but frequency selectivity is also introduced in these parameters such as resistance, conductance and impedances. However, the proposed Simulink channel model offers an analysis and characterization of capacitive coupler, network impedance and channel transfer function for NB-PLC. Analysis of analytical and simulated results shows a close agreement of the channel transfer function. In the absence of a standardized NBPLC channel model, this research work can prove significant in improving the efficiency and accuracy of NB-PLC communication transceivers for Smart Grid communications.

New UWB BPF with Steep Selectivity Based on T-Resonator and Capacitively Coupled λ/4 and λ/2 Line Sections

  • Duong, Thai Hoa;Kim, Ihn-Seok
    • Journal of electromagnetic engineering and science
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    • v.9 no.3
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    • pp.164-173
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    • 2009
  • In this paper, two new circuit structures for European and U.S. ultra-wide band(UWB) bandpass filters(BPFs) with sharp roll-off characteristics are introduced. We show first that the ultra-wide bandpass property is obtained from a $\lambda$/4 open T resonator with a capacitively coupled $\lambda$/4 short-circuited line, which provides two attenuation poles at lower and upper cutoff frequencies. Then, two identical capacitively coupled input/output lines, which can be $\lambda$/4-length open ends or $\lambda$/2-length short ends, with the T-resonator, are adopted to suppress lower and higher frequency components outside of the pass band. There is coupling between the input and output lines providing two additional transmission zeros in the lower and upper transition bands of the filter. Since the coupling between the T-resonator with the $\lambda$/4 short-circuited line and the input/output lines limits the bandwidth of the filter to the European UWB band, both the $\lambda$/4 short-circuited line and the input/output lines are inserted between the two stacked T-resonators for the U.S. UWB band. The filter structures are simulated with ADS and HFSS and realized with low-temperature co-fired ceramic(LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results.

Spectrum Sensing System Design Using RF Front-End Processing (RF단 프로세싱에 의한 스펙트럼 센싱 시스템 설계)

  • Hong, Jun Gi;Han, Sang-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.3
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    • pp.305-310
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    • 2015
  • In this paper, a wireless spectrum sensing receiver system is proposed. While a conventional Cognitive Radio(CR) system utilizes frequency down-conversion and demodulation to recognize wireless spectral signal, the proposed one is able to recover and sense valid signal at an RF front-end. It has been designed with a super-regeneration type circuit with a channel selectivity and variability for FDM applications with which a conventional single-channel super-regeneration circuit could not provide. From experimental evaluation, the implemented system has been optimized for channel allocation with quenching signal, and verified for 5 MHz-channel spacing.

Surface acoustic wave gas sensors by assembling gas chromatography column (가스 크로마토그래피를 부착한 표면탄성파 가스 센서)

  • Yoo, Beom-Keun;Park, Yong-Wook;Kang, Chong-Yun;Yoon, Seok-Jin;Choi, Doo-Jin;Kim, Jin-Sang
    • Journal of Sensor Science and Technology
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    • v.16 no.1
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    • pp.39-43
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    • 2007
  • This paper presents characteristics of surface acoustic wave (SAW) gas sensor for detecting volatile gases such as acetone, methanol, and ethanol by measuring phase shift of output signal. A delay-line by combining with a center frequency of 200 MHz was fabricated on S-T Quartz substrates. Using gas chromatography column, the selectivity of the SAW gas sensor were introduced. Experimental results, which show the phase change of output signal under the absorption of volatile gas on sensor surface, were presented. This SAW gas sensor system may be well suited for a high performance electronic nose system.

Dry Etching of Al2O3 Thin Films in O2/BCl3/Ar Inductively Coupled Plasma

  • Yang, Xeng;Woo, Jong-Chang;Um, Doo-Seung;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.202-205
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    • 2010
  • In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

Etching properties of sapphire substrate using $CH_4$/Ar inductively coupled plasma ($CH_4$/Ar 유도 결합 플라즈마를 이용한 Sapphire 기판의 식각 특성)

  • Um, Doo-Seung;Kim, Gwan-Ha;Kim, Dong-Pyo;Yang, Xue;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.102-102
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    • 2008
  • Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

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Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

  • Woo, Jong-Chang;Park, Jung-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.3
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    • pp.106-109
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    • 2011
  • We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.