• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• 전기학회논문지
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• 제57권4호
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• pp.648-652
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• 2008

Corona discharge and ozone generation characteristics of a wire-plate plasma reactor, with a biased third electrode, have been investigated with an emphasis on the role of the bias voltage and frequency applied on the third electrode. It was found that the wire-plate plasma reactor, with the biased third electrode, had a switching characteristic on its I-V characteristics for negative and positive discharges, which is very different from that of a conventional wire-plate plasma reactor without the third electrode. As a result, the corona discharge and ozone generation characteristics of the proposed plasma reactor could be controlled by adjusting the bias voltage and frequency of the third electrode. The corona onset and breakdown voltages, and ozone generation and yield, were increased compared with those of without the third electrode. These, however, reveal the effectiveness of the biased third electrode.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.39-43
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• 2014

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• 대한기계학회논문집A
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• 제25권3호
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• pp.424-433
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• 2001

We present a new electrostatic repulsive-force microactuator using a lateral repulsive force induced by an asymmetric distribution of electrostatic field. The lateral repulsive force has been characterized by a simple analytical equation, derived from a finite element simulation. A set of repulsive force polysilicon microactuators has been designed and fabricated by a 4-mask surface-micromachining process. Static and dynamic micromechanical behavior of the fabricated microactuators has been measured at the atmospheric pressure for a varying bias voltage. The static displacement of the fabricated microactuator, proportional to the square of the DC bias voltage, is obtained as 1.27 $\mu\textrm{m}$ for the DC bias voltage of 140V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the DC bias voltage increases from 60V to 140V. The measured quality-factor varies from 12 to 13 for the bias volatge range of 60V∼140V. The characteristics of the electrostatic repulsive-force have been discussed and compared and compared with those of the conventional electrostatic attractive-force.

• 한국전자파학회논문지
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• 제24권4호
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• pp.384-393
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• 2013

본 논문에서는 집중 소자를 이용한 광대역 평판형 마이크로파 바이어스-티의 설계를 보였다. 설계된 바이어스-티는 DC 블록과 RF 초크로 구성된다. DC 블록용 커패시터는 광대역으로 동작하는 커패시터를 사용하였고, DC 공급 및 RF 초크용 인덕터는 서로 다른 자기 공진 주파수(SRF: Self Resonance Frequency)를 가지는 인덕터들을 직렬로 연결하였다. RF 초크에서 집중 소자들의 직렬 공진에 의하여 발생하는 신호의 손실을 병렬의 저항과 커패시터를 연결하여 해결하였다. 설계된 바이어스-티는 1608 칩 형태의 집중 소자들을 이용 조립하여 제작하였다. 측정은 커넥터의 손실과 영향을 제거하기 위하여 Anritsu 3680K jig에 연결하여 측정하였다. 제작된 바이어스-티는 10 MHz~18 GHz의 광대역에서 동작하고, 측정된 반사 손실이 -15 dB 이하를 가지며, 삽입 손실은 -1.5 dB 이하인 것을 확인하였다.

• 전자공학회논문지
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• 제53권12호
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• pp.15-19
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• 2016

매우 큰 사이즈를 가진 multi-finger RF MOSFET의 $S_{11}$-parameter에서 스미스차트의 저항 circle 라인을 벗어나는 kink 현상의 게이트 바이어스 종속 특성이 관찰되었다. 이러한 바이어스 종속성은 $S_{11}$-parameter의 크기와 위상, 입력저항, 입력 커패시턴스의 주파수 응답곡선을 측정하여 최초로 분석되었다. 그 결과 입력 커패시턴스의 크기와 입력저항의 dominant pole과 zero 주파수에 의해 $V_{gs}$ 종속 kink 현상이 크게 변하는 것을 알 수 있다. $V_{gs}=0V$일 때 매우 적은 $S_{11}$-parameter 위상차와 입력저항의 높은 pole 주파수에 의해 고주파영역에서 kink 현상이 나타난다. 하지만 $V_{gs}$가 높아지면 $S_{11}$-parameter 위상차가 크게 증가하고 pole 주파수가 낮아져 저주파영역에서 kink 현상이 발생하게 된다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.2
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• pp.185-190
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• 2006

The correct estimation of the ionospheric delays is very important for the precise kinematic positioning especially in case of the long baseline. In case of triple frequency system, the ionospheric delays can be estimated from the measurements, but, in case of dual frequency system, the situation is not so simple. The precision of those supplied by the external information source such as IONEX is not sufficient. The high frequency component is neglected, and the precision of the low frequency component is not sufficient for the long baseline positioning. On the other hand, the high frequency component can be estimated from the phase range measurements. If the low frequency components are estimated by using the external information source or pseudo range measurements, a more reasonable estimation of the ionospheric delays may be possible. It has already been discussed by the author that the estimation of the low frequency components by using the external information source is not sufficient but fairly effective. The estimation using the pseudo range measurements is discussed in the present paper. The accuracy is not sufficient at present because of the errors in the pseudo range measurements. It is clarified that the bias errors in the pseudo range measurements are responsible for the poor accuracy of the ionospheric delays. However, if the accuracy of the pseudo range measurements is improved in future, the method would become very promising.

• 전자공학회논문지D
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• 제34D권4호
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• pp.17-26
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• 1997

A enw channel current model of GaAs MeSFET suitagle for applications to microwave CAD has been developed. The current model includes the bias-dependent frequency dispersion effects and its parameters are extracted from the pulsed I-V measurements at several quiescent bias points. The model is verified by applying to the nonlinear circuit designs of power amplifier and MMIC mixer.

• 대한전기학회논문지
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• 제38권10호
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• pp.840-847
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• 1989

It is an important problem that the plasma of high B value is to be confined safely in the research of plasma fusion. So, the Reversed Field Pinch (RFP) plasma has been studied. RFP is stable pinch having self-reversal phenomenon that forms reversed field of itself, but its process of formation is unstable. Therefore, in this paper, we configured the stable RFP by supplying the radio-frequency rotating field just before the RFP is configured by self-reversal phenomenon. Moreover, when conductivity wall is used, toroidal configured by self-reversal phenomenon. Moreover, when conductivity wall is used, toroidal flux is subject to heavy fluctuation in case of high bias field compared with low bias field.