• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.98-102
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• 2003

$Ba_2NaNb_5O_{15}$, hereafter BNN, thin films are attractive candidates for nonvolatile memory and electro-optic devices. In the present work, thin films that have different contents of Ba, Na and Nb have been prepared by H-MOD technique on silicon and Pt substrates. XRD and SEM were used to investigate the phase evolution behavior and the microstructure of the films. It was found that the films of about 450nm thick were crack-free and uniform in microstructure. Nb content strongly influenced the phase formation of the films, where low temperature phase was always formed at the stoichiometric BNN composition. However, the amount of low temperature phase decreased with the increase of excess Nb content, and the single phase (orthorhombic tungsten bronze structure) BNN thin film was obtained at the temperature as low as $750^{\circ}C$ for samples with excess niobium. From this study, the sub-solidus phase diagram below $850^{\circ}C$ for $BaO-Na_2O-Nb_2O_5$ ternary system is proposed.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.381-388
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• 2000

The temperature and velocity fluctuations occurred by the baroclinic instability in the melt for Czochralski crystal growth method were experimentally investigated. Wood's metal, which has similar Pr number to the silicon melt, was used as the working fluid and azimuthal velocity was measured using incorporated magnet probe. The azimuthal velocities near the free surface are faster than velocities near the bottom and the rotational velocities near the model crystal become very fast. The results of measured temperature fluctuation as increasing rotation rate were shown that baroclinic instability occurred at the region of Ro<1.01, Ta>$9.63{\times}10^8$. In these region, the fluctuations of temperature and velocity have the same frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.21-24
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• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.187-188
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• 2005

The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AlN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick ($2.6{\mu}m$) GaN layer. X-ray diffraction and photoluminescence measurements are used to determine the effect of AlN thickness on the strain in the subsequent GaN layers. Strong band edge photoluminescence of GaN on Si(111) was observed with a full width at half maximum of the bound exciton line as low as 17meV at 13K.

• Design & Manufacturing
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• v.17 no.2
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• pp.15-21
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• 2023

In this study, a diamond turning machine and a laser-assisted machining module were utilized for the complex combined cutting of aspheric shapes and fine patterns on the surface of high-hardness brittle material, silicon. The analysis of material's form accuracy and corrective machining was conducted based on key factors such as laser output, rotational speed, feed rate, and cutting depth to achieve form accuracy below 1 ㎛ and surface roughness below 0.1 ㎛. The cutting condition and corrective machining methods were investigated to achieve the desired form accuracy and surface roughness. The rotational speed of the spindle and the linear feed rate of the diamond turning machine were varied in five stages for the cutting condition test. Surface roughness and form accuracy were measured using both a contact surface profilometer and a non-contact surface profilometer. The experimental results revealed a tendency of improved surface roughness with increased rotational speed of the workpiece, and the best surface roughness and form accuracy were observed at a feed rate of 5 mm/min. Furthermore, based on the cutting condition experiments, corrective machining was performed. The experimental results demonstrated an improvement in form accuracy from 0.94 ㎛ to 0.31 ㎛ and a significant reduction in the average value of the surface roughness curve from 0.234 ㎛ to 0.061 ㎛. This research serves as a foundation for future studies focusing on the machinability in relation to laser output parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.181-189
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• 2012

We developed a new high-yield synthesis method of free-standing germanium nanocrystals (Ge NCs) by means of the gas-phase photolysis of tetramethyl germanium in a closed reactor using an Nd-YAG pulsed laser. Size control (5-100 nm) can be simply achieved using a quenching gas. The $Ge_{1-x}Si_x$ NCs were synthesized by the photolysis of a tetramethyl silicon gas mixture and their composition was controlled by the partial pressure of precursors. The as-grown NCs are sheathed with thin (1-2 nm) carbon layers, and well dispersed to form a stable colloidal solution. Both Ge NC and Ge-RGO hybrids exhibit excellent cycling performance and high capacity of the lithium ion battery (800 and 1100 mAh/g after 50 cycles, respectively) as promising anode materials for the development of high-performance lithium batteries. This novel synthesis method of Ge NCs is expected to contribute to expand their applications in high-performance energy conversion systems.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.177-184
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• 2000

The effect of the buyancy and thermocapillarity for differnent aspect ratio of flow field on melt motion and mass transfer has been numerically investigated in magnetic Czochralski crystal growth of silicon. During the process of crystal growth, the melt depth of crucible reduces so the aspect ratio of flow field also reduces. Therefore the shape of magnetic field of the flow field changes and the flow pattern also changes significantly. Together with the melt flow which forms the Marangoni convection (or thermocapillary flow) that comes from the inside the flow field, a flow circulation is observed near the corner close both to the crucible wall and the free surface. Due to this circulation, buoyancy effect has been turned out to be local rather than global. As the aspect ratio decreases, the radial component of the magnetic field prevails compared with the axial component in the flow field. Under the influence of this magnetic field, the melt flow and the temperature distribution in a meridional plane tend to depend on the radial position. As the aspect ratio decreases, the temperature gradient near the edge of the crystal decreases yielding smaller thermocapillarity, and the oxygen concentration near the crystal and the oxygen incorporation rate also decrease.