• Title/Summary/Keyword: Forward type

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A Study on the shape Design of the Forward Forming Region in Cross Rolling of Multi-Step Shaft (다단 샤프트 제조용 크로스롤 금형 선단부의 형상설계에 관한 연구)

  • 김익삼
    • Transactions of Materials Processing
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    • v.8 no.2
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    • pp.178-187
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    • 1999
  • The Cross rolling between flat jaws, as a kind of hot forging, is the forming method to make the axisymmetric multi-step shaft by its rotation and pressure between flat jaws which move in opposite direction. The purpose of this study is to propose the optimal geometric data for shape development of the forward forming region. All data described on this paper are quantified by experiment from initial shape design to final shape development. As the result, proper geometric data are proved that lenth of the first forming area in the forward forming region is 1.5 times larger than circumference of work-piece and the progress angle changes 3 times smoothly.

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Solution of the Radiation Problem by the B-Spline Higher Order Kelvin Panel Method for an Oscillating Cylinder Advancing in the Free Surface

  • Hong, Do-Chun;Lee, Chang-Sup
    • Journal of Ship and Ocean Technology
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    • v.6 no.1
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    • pp.34-53
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    • 2002
  • Numerical solution of the forward-speed radiation problem for a half-immersed cylinder advancing in regular waves is presented by making use of the improved Green integral equation in the frequency domain. The B-spline higher order panel method is employed stance the potential and its derivative are unknown at the same time. The present numerical solution of the improved Green integral equation by the B-spline higher order Kelvin panel method is shown to be free of irregular frequencies which are present in the Green integral equation using the forward-speed Kelvin-type Green function.

A Large-Signal Analysis of a Ring Oscillator with Feed-Forward and Negative Skewed Delay (부 스큐 지연 방식과 피드포워드 방식을 사용한 링 발진기의 대신호 해석)

  • Lee, Jeong-Kwang;Yi, Soon-Jai;Jeong, Hang-Geun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.7
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    • pp.1332-1339
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    • 2010
  • This paper presents a large signal analysis of ring-type oscillators with feed forward and negative skewed delay scheme. The analysis yields the frequency increase factor due to two schemes. The large signal analysis is needed, because small signal model is limited to the initial stage of oscillation[1]. For verification of the frequency increase factor, simulation were done under the same conditions for the two different types of ring oscillators, i.e., with and without feed forward and negative skewed delay scheme. Simulation results are in good agreement with predictions based on analysis.

Designing of Dynamic Sensor Networks based on Meter-range Swarming Flight Type Air Nodes

  • Kang, Chul-Gyu;Kim, Dae-Hwan
    • Journal of information and communication convergence engineering
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    • v.9 no.6
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    • pp.625-628
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    • 2011
  • Dynamic sensor network(DSN) technology which is based on swarming flight type air node offers analyzed and acquired information on target data gathered by air nodes in rotation flight or 3 dimension array flight. Efficient operation of dynamic sensor network based on air node is possible when problems of processing time, data transmission reliability, power consumption and intermittent connectivity are solved. Delay tolerant network (DTN) can be a desirable alternative to solve those problems. DTN using store-and-forward message switching technology is a solution to intermittent network connectivity, long and variable delay time, asymmetric data rates, and high error rates. However, all processes are performed at the bundle layer, so high power consumption, long processing time, and repeated reliability technique occur. DSN based on swarming flight type air node need to adopt store-and-forward message switching technique of DTN, the cancelation scheme of repeated reliability technique, fast processing time with simplified layer composition.

Characterization of Conduction Mechanism in Cu Schottky Contacts to p-type Ge

  • Kim, Se Hyun;Jung, Chan Yeong;Kim, Hogyoung
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.324-327
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    • 2014
  • Germanium (Ge) is a promising material for next generation nanoelectronics and multiple junction solar cells. This work investigated the electrical properties in Cu/p-type Ge Schottky diodes, using current-voltage (I-V) measurements. The Schottky barrier heights were 0.66, 0.59, and 0.70 eV from the forward ln(I)-V, Cheung, and Norde methods, respectively. The ideality factors were 1.92 and 1.78 from the forward ln(I)-V method and Cheung method, respectively. Such high ideality factor could be associated with the presence of an interfacial layer and interface states at the Cu/p-Ge interface. The reverse-biased current transport was dominated by the Poole-Frenkel emission rather than the Schottky emission.

PSiM Based Dynamic Analysis of Input Split Type Hybrid Electric Vehicle (PSiM기반의 입력분기방식 하이브리드 자동차의 모드 변환에 따른 동특성 해석)

  • Bae, Tae-Suk;Choi, Jae-Ho;Lim, Deok-Young
    • The Transactions of the Korean Institute of Power Electronics
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    • v.17 no.4
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    • pp.359-367
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    • 2012
  • In this paper, the input split type series-parallel hybrid electric vehicle (SPHEV) is established and the interpretation of the dynamic characteristics in four kinds of HEV modes, such as electric vehicle mode, engine mode, hybrid mode, and regeneration mode, is described. For this research, the forward-facing approach simulation method is chosen, which is useful for vehicle dynamic analysis. The rating of each powertrain component is designed based on energy-based concept and electrical peaking hybrid (ELPH) method. Finally, the designed powertrain is evaluated with the developed PSiM simulator and simulation results are shown.

Development of An Open Frame Type High Power Density Switching Converter (개방형 고밀도 스위칭 컨버터의 개발)

  • 오용승;김희준
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.52 no.9
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    • pp.468-474
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    • 2003
  • This paper describes the development of an open frame type high power density switching converter. It is based on the active clamp forward converter with synchronous rectifier, and packaged by using the open frame and multi-layer printed circuit board (PCB) technology to achieve the higher power density. Furthermore, the windings of transformer and inductor are also realized by multi-layer PCB so that it also contributes to achieve higher power density. Through the experiment on the prototype converter of 50[W], it is confirmed that power density of 50[W/i$n_3$] and maximum efficiency of over 91[%] are obtained.

Double Two Switch Forward Transformer-Linked Soft-Switching PWM DC-DC Power Converter with Tapped Inductor Filters

  • Moisseev Serguei;Koudriavtsev Oleg;Hiraki Eiji;Nakamura Mantaro;Nakaoka Mutsuo;Hamada Satoshi
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.193-197
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    • 2001
  • This paper presents a novel circuit topology of the double two-switch forward type high frequency transformer linked soft-switching PWM DC-DC power converter with tapped inductor filters that can operate under a condition of the low peak voltage stress across the power semiconductor devices and lowered peak current stress through the transformer for some high power applications. This circuit topology of an interleaved two-switch forward soft-switching power converter is proposed in the order to minimize an idle circulating current due to the tapped inductor filter without of any additional active auxiliary resonant-assisted snubber circuits, such as active resonant DC link snubbers and AC link snubbers, active resonant commutation leg link snubbers. The unique advantages of this power converter are less power circuit components and power semiconductor devices, constant frequency PWM scheme, cost effective configuration and wider soft-switching PWM operation range under PWM power regulations load variations. The practical effectiveness of the proposed soft-switching converter circuit topology is tested by simulations and is proved by experimental results received from the 500W-100kHz breadboard setup.

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Reliability Analysis in PtSi-nSi Devices with Concentration Variations of Junction Parts (접합 부분의 농도 변화를 갖는 PtSi-nSi 소자에서 신뢰성 분석)

  • 이용재
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.1
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    • pp.229-234
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    • 1999
  • We analyzed the reliability characteristics in platinum schottky diodes with variations of n-type silicon substrates concentrations and temperature variations of measurements. The parameters of reliability measurement analysis are saturation current. turn-on voltage and ideality factor in the forward bias, the breakdown voltage in the reverse bias with device shapes. The shape of devices are square type and long rectangular type for edge effect. As a result, we analyzed that the forward turn-on voltage, barrier height, dynamic resistance and reverse breakdown voltage were decreased but ideality factor and saturation current were increased by increased concentration in platinum and n-silicon junction parts. In measurement temperature(RT, $50^{\circ}C$, $75^{\circ}C$), the extracted electrical parameter values of reliability characteristics were increased at the higher temperature under the forward and reverse bias. The long rectangular type devices were more decreased than the square type in reverse breakdown voltage by tunneling effects of edge part.

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A Study on the Soft-Switching Forward-Flyback Converter Using Auxiliary Inductor and Auxiliary Diode (보조 인덕터와 보조 다이오드를 적용한 소프트-스위칭이 가능한 포워드-플라이백 컨버터에 관한 연구)

  • Lee, A-Ra;Park, Jun-Woo;Hong, Sung-Soo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.2
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    • pp.140-149
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    • 2017
  • This study proposes a new type of active-clamp forward-flyback converter with two transformers that operate in forward and flyback modes during on and off times, respectively, instead of not using an output inductor. The main switch can be turned on with zero-voltage switching (ZVS) using the leakage inductance of the transformer and the output capacitor of the main switch. The leakage inductance should be increased to ZVS. However, the ringing between the leakage inductance of the transformer and the parasitic output capacitance of the secondary side rectifier switches results in a serious voltage spike. A forward-flyback converter employing auxiliary inductor and auxiliary diode is proposed to overcome the problem. The operational principles are analyzed in detail and validated through experiments with a 385 V-to-53 V/37 A prototype.