• 제목/요약/키워드: Forward Voltage

검색결과 532건 처리시간 0.031초

효율적인 p+ 다이버터를 갖는 수평형 트렌치 전극형 IGBT의 제작에 따른 전기적 특성에 관한 연구 (Study on Electrical Characteristics of the Fabricated Lateral Trench Electrode IGBT with p+ Diverter)

  • 강이구;김상식;성만영
    • 한국전기전자재료학회논문지
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    • 제15권9호
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    • pp.750-757
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    • 2002
  • A new lateral trench LTEIGBT with p+ diverter was proposed to suppress latch-up of LTIGBT The p+ diverter was placed between the anode and cathode electrode. The latch-up of LTEICBT with a p+ diverter was effectively suppressed to sustain an anode voltage of 8.7V and a current density of 1453A/$\textrm{cm}^2$ while in the conventional LTIGBT, latch-up occured at an anode current density of 540A/$\textrm{cm}^2$. In addition, the forward blocking voltage of the proposed LTEIGBT with a p+ diverter was about 140V. The forward blocking voltage of the conventional LTIGBT of the same size was no more than 105V, We fabricated the proposed LTEIGBT with a p+ diverter after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT with a p+ diverter and the conventional LIGBT are 90㎃ and 70㎃, respectively, at the same breakdown voltage of 150V.

AT 포워드 다중 공진형 컨버터의 동작 특성 (The operational characteristics of the AT Forward Multi-Resonant Converter)

  • 김창선
    • 조명전기설비학회논문지
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    • 제12권3호
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    • pp.114-123
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    • 1998
  • The multi-resonant converter(MRC) minimizes a parasitic oscillation by using the resonant tank circuit absorbed parasitic reactances existing in a converter circuit. So it si possible that the converter operated at a high frequency has a high efficiency because the losses are reduced. Such a MHz high frequency applications provide a high power density [W/inch3] of the converter. But the resonant voltage stress across a switch of the resonant tank circuit is 4~5 times a input voltage. This h호 voltage stress increases the conduction loss because of on-resistance of a MOSFET with higher rating. Thus, in this paper we proposed the alternated multi-resonant converter (AT MRC) differ from the clamp mode multi-resonant converter and applicated it to the forward MRC. The AT forward MRC can reduce the voltage stress to 2~3 times a input voltage by using two series input capacitor. The control circuit is simple because tow resonant switches are driven directly by the output pulse of the voltage controled oscillator. This circuit type is verified through the experimental converter with 48V input voltage, 5V/50W output voltage/power and PSpice simulation. the measured maximum voltage stress is 170V of 2.9 times the input voltage and the maximum efficiency of 81.66% is measured.

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유전자 알고리즘을 이용한 포워드 컨버터 제어기의 파라메터 최적화 (Parameter Optimization of Controllers for Forward Converters Using Genetic Algorithms)

  • 최영규;우동영;박진현
    • 한국정보통신학회논문지
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    • 제14권1호
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    • pp.177-182
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    • 2010
  • 포워드 컨버터는 광범위하게 사용되는 파워공급기 중의 하나이다. 본 논문은 부하가 다양하게 변동하는 환경에서 출력 전압의 변동을 최소화하는 포워드 컨버터의 최적회로 소자 값을 구하기 위한 파라메터 동조방법을 제시한다. 위상여유의 개념을 사용하는 기존의 방법은 최적의 위상여유를 통해 출력 전압 응답에서 부분적인 성능 개선이 이루어지도록 확장되었다. 이를 위해서 위상여유를 동조 파라메터로 두고 유전자 알고리즘을 사용하여 최적화하였다. 다음으로 회로 소자 값들을 동조 파라메터로 직접 선택하고, 역시 유전자 알고리즘으로 최적화하여 포워드 컨버터의 출력 전압 제어에서 매우 개선된 성능을 갖도록 하였다.

수평형 파워 MOSFET에 있어서 트렌치 Isolation 적용에 의한 순방향 항복특성 개선을 위한 새로운 소자의 설계에 관한 연구 (The Study of Improving Forward Blocking Characteristics for Small Sized Lateral Trench Electrode Power MOSFET using Trench Isolation)

  • 김진호;김제윤;유장우;성만영;김기남
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.9-12
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    • 2004
  • In this paper, a new small sized Lateral Trench Electrode Power MOS was proposed. This new structure, called LTEMOS(Lateral Trench Electrode Power MOS), was based on the conventional lateral power MOS. But the entire electrodes of LTEMOS were placed in trench oxide. The forward blocking voltage of the proposed LTEMOS was improved by 1.5 times with that of the conventional lateral power MOS. The forward blocking voltage of LTEMOS was about 240 V. At the same size, an improvement of the forward blocking voltage of about 1.5 times relative to the conventional MOS was observed by using ISE-TCAD which was used for analyzing device's electrical characteristics. Because all of the electrodes of the proposed device were formed in each trench oxide, the electric field was crowded to trench oxide and punch-through breakdown was occurred, lately.

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저전압 대전류용 Forward-Flyback DC-DC 컨버터 (Forward-Flyback DC-DC Converter for the Low Voltage and High Current Applications)

  • 황선민;박승규;조인호;안태영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 B
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    • pp.980-982
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    • 2002
  • In this paper, we report the experimental results of the Forward-flyback DC-DC converter with current doubler and synchronous rectifier. The experimental converter, that has a output voltage 1.8V, output current 25A, maximum power of 45W, switching frequency of 290kHz and input voltage range of 36-75V, has been successfully implemented. As a result, in the entire voltage range the measured full load efficiency was above 82%, and the output voltage was regulated at 1.8V within ${\pm}$3% tolerance.

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온도변화에 따른 백금 실리사이드-엔 실리콘 접합의 전자 터널링 특성 (Electron Tunneling Characteristics of PtSi-nSi Junctions according to Temperature Variations)

  • 장창덕;이정석;이광우;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.87-91
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    • 1998
  • In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

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A Forward-Integrated Buck DC-DC Converter with Low Voltage Stress for High Step-Down Applications

  • Adivi, Maedeh Ghanbari;Yazdani, Mohammad Rouhollah
    • Journal of Power Electronics
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    • 제18권2호
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    • pp.356-363
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    • 2018
  • The combination of a buck converter and a forward converter can be considered to accomplish a high step-down non-isolated converter. To decrease the insufficient step-down ratio of a regular buck converter and to distribute switch voltage stress, a forward-integrated buck (FIB) converter is proposed in this paper. The proposed interleaved DC-DC converter provides an additional step-down gain with the help of a forward converter. In addition to its simple structure, the transformer flux reset problem is solved and an additional magnetic core reset winding is not required. The operational principle and an analysis of the proposed FIB converter are presented and verified by experimental results obtained with a 240 W, 150 V/24 V prototype.

부하전류 전향보상기를 이용한 강압쵸퍼의 동특성 제어 (Dynamic Characteristics Control of a Step-down Chopper Using Load current Feed-forward Compensator)

  • 전춘병;전지용;전기영;한경희
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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    • pp.66-69
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    • 2008
  • In this paper, The author present a load current feed-forward compensator by method that improve voltage controller of Step-down Chopper to get stable output voltage to sudden change of load current. To confirm the characteristicsof a presented load current feed -forward compensator compared each transfer function of whole system that load current feed-forward compensator is added with transfer function of whole system that existent voltage controller is included using Mason gains formula in Root locus and Bode diagram. As a result the pole of system is improved, extreme point of the wave and system improves, and size of peak value and phase margin of break frequency in resonance frequency confirmed that is good. Therefore, presented control technique could confirm that reduce influence by perturbation and improves stationary state and dynamic characteristics in output of Step-down Chopper.

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위상이동 방식을 적용한 ZVZCS Interleaving Two-Transistor Forward 컨버터에 관한 연구 (A Study on the ZVZCS Interleaving Two-Transistor Forward Converter using Phase Shift Control)

  • 한경태;김용;배진용;이규훈;조규만
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.276-280
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    • 2003
  • This paper presents a zero voltage and zero current switching (ZVZCS) interleaving two-transistor forward converter for high input voltage and high power application. A phase shift has a disadvantage that a circulating current and RMS current stress, conduction losses of transformer and switching devices increases. Due to this circulating current and RMS current stress, conduction losses of transformer and switching devices increases. To alleviate these problems, we propose an improved interleaving two-transistor forward Zero Voltage and Zero Current Switching (ZVZCS) dc/dc converter using a tapped inductor a snubber capacitor and two snubber diodes attached at the secondary side of transformer. The proposed ZVZCS converter is verified on a 1.8kW, 5kHz experimental prototype.

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300V용 Mo-MPS 정류기의 제조 및 그 특성 (Fabrication and Characteristics of 300V Mo-MPS Rectifier)

  • 최형호;박근용;김준식;최시영
    • 대한전자공학회논문지SD
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    • 제40권6호
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    • pp.393-399
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    • 2003
  • 일반적인 MPS 정류기의 순방향 전압강하 및 전력손실을 향상시키기 위해 몰리브덴을 장벽금속으로 사용하여 새로운 Mo-MPS 정류기를 제조하였다. 제조 된 Mo-MPS 정류기의 전기적 특성을 Al-MPS 및 Pt-MPS 정류기와 비교함으로써 특성을 평가하였다. 실험 결과 동일한 0.1A의 전류에서 Mo-MPs 정류기의 순방향 전압강하가 Al-MPS 및 Pt-MPS 정류기와 비교하여 각각 0.11V, 0.24V 낮게 나타났다. 따라서 순방향 전류밀도와 순방향 전압강하에 지배적으로 의존하는 전력손실에 있어서도 일반적인 MPS 정류기와 비교하여 향상되었다. 68% 쇼트키 접합 면적비를 가지는 Mo-MPS 정류기의 역방향 항복전압은 대략 304V로 나타났다. 이는 Al-MPS 및 Pt-MPS 보다 낮은 순방향 전압강하를 가지면서도 높은 역방향 항복전압 특성을 보여준다.