• Journal of Welding and Joining
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• v.35 no.2
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• pp.13-22
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• 2017

In laser full penetration welding process, full penetration hole(FPH) is formed as a result of force balance between the vapor pressure and the surface tension of the surrounding molten metal. In this work, a three-dimensional numerical model based on a conserved-mass level-set method is developed to simulate the transport phenomena during laser full penetration welding process, including full penetration keyhole dynamics. Ray trancing model is applied to simulate multi-reflection phenomena in the keyhole wall. The ghost fluid method and continuum method are used to deal with liquid/vapor interface and solid/liquid interface. The effects of processing parameters including laser power and scanning speed on the resultant full penetration hole diameter, laser energy distribution and energy absorption efficiency are studied. The model is validated against experimental results. The diameter of full penetration hole calculated by the simulation model agrees well with the coaxial images captured during laser welding of thin stainless steel plates. Numerical simulation results show that increase of laser power and decrease of welding speed can enlarge the full penetration hole, which decreases laser energy efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.593-599
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• 2003

The nanoparticle magnetite of which diameter was about 3 nm was synthesized in a homogeneous aqueous solution without a template. The synthesized magnetite nanoparticle was easily oxidized to maghemite in an ambient condition. The magnetic properties of the ferrite nanoparticle show superparamagnetism at room temperature and its blocking temperature is around 93 K. Modifying the sequential adsorption method of metal bisphosphonate, we have prepared a multilayer thin film of the ferrite nanoparticle on planar substrates such as glass, quartz and Si wafer. In this multilayer the ferrite nanoparticle layer and an alkylbisphosphonate layer are alternately placed on the substrates by simple immersion in the solutions of the ferrite nanoparticle and 1, 10-decanediylbis (phosphonic acid) (DBPA), alternately. This is the first example, as far as we know, of nanoparticle/alkyl-bisphosphonate multilayer which is an analogy of metal bisphosphonate multilayer. UV-visible absorption and infrared reflection-absorption studies show that the growth of each layer is very systematic and the film is considerably optically transparent to visible light of 400-700 nm. Atomic force microscopic images of the film show that the surface morphology of the film follows that of the substrate in μm-scale image and the nanoparticle-terminated surface is differentiated from the DBPA-terminated one in nm-scale image. The magnetic properties of this ferrite/DBPA thin film are almost the same as those of the ferrite nanoparticle powder only.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.358-360
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• 2007

For large scaled solar cells and photosensors CdS thin films of $2{\mu}m$ thickness have deposited on ITO glass substrate by chemical bath deposition methode in $300^{\circ}C$ electric furnace. The surface roughness and resistance of cadmium sulphide(CdS) thin films with different microstructures and morphologies was investigated by using a x-ray diffraction (XRD), a scanning electron microscope (SEM), an atomic force microscope (AFM), and a near-field scanning microwave microscope (NFMM). As the different substrate heat temperatures, the microwave reflection coefficient $S_{11}$ and intensity of the (002) diffraction peak was changed, and the surface morphology also has shown differently.

• Polymer(Korea)
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• v.35 no.3
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• pp.272-276
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• 2011

The induction mechanisms of planar arrangements in cholesteric liquid crystals (CLC) which showed selective reflections of visible light were investigated by measuring the selective reflectivity and FTIR peak intensity of $C{\equiv}N$ stretching band. Although the planar arrangement of CLC was not as perfectly induced as the cases prepared with using alignment layers, it could be also induced by stretching polymer substrate or by applying shear forces. The planar arrangements were induced by forming CLC helical structures on top of liquid crystal molecules which were in contact with the substrate and oriented all in the same direction.

• Korean Journal of Materials Research
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• v.6 no.11
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• pp.1127-1135
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• 1996

반도체 소자가 고집적화 됨에 따라 단위공정의 수가 증가하게 되었고 동시에 실리콘 기판의 오염에 대한 문제가 증가하였다. 실리콘 기판의 주 오염물로는 유기물, 파티클, 금속분순물 등이 있으며 특히, Cu와 Fe과 같은 금속불순물은 이온주입 공정, reactive ion etching, photoresist ashing과 같은 실 공정 중에 1011-1013atoms/㎤정도로 오염이 되고 있다. 그러나 금속불순물 중 Cu와 같은 전기음성도가 실리콘 보다 큰 오염물질은 일반적인 습석세정방법으로는 제거하기 힘들다. 따라서 본 연구에서는 Cu와 Fe과 같은 금속불순물을 제거할 목적을 건식과 습식 세정방법을 혼합한 UV/ozone과 HF세정을 제안하여 실시하였다. CuCI2와 FeCI2 표준용액으로 실리콘 기판을 인위적 오염한 후 split 1(HF-only), split 2 (UV/ozone+HF), split 3 (UV/ozone + HF 2번 반복), split 4(UV/ozone-HF 3번 반복)를 실시하였고 TXRF(Total Reflection X-Ray Fluorescence)와 AFM(Atomic Force Microscope)으로 금속불순물 제거량과 표면거칠기를 각각 측정하였다. 또한 contact angle 측정으로 세정에 따른 표면상태도 측정하였다. TXRF 측정결과 split 4가 가장 적은 양의 금속불순물 잔류량을 보였으며 AFM 분석을 통한 표면거칠기도 가장 작은 RMS 값을 나타내었다. Contact angle 측정 결과 UV/ozone 처리는 친수성 표면을 형성하였고 HF처리는 소수성 표면을 형성하였다.

• Geomechanics and Engineering
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• v.25 no.1
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• pp.49-58
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• 2021

The resistance of soil to the tractive force of flowing water is one of the essential parameters for the stability of the soil when directly exposed to the movement of water such as in rivers and ocean beds. Biopolymers, which are new to sustainable geotechnical engineering practices, are known to enhance the mechanical properties of soil. This study addresses the surface erosion resistance of river-sand treated with several biopolymers that originated from micro-organisms, plants, and dairy products. We used a state-of-the-art erosion function apparatus with P-wave reflection monitoring. Experimental results have shown that biopolymers significantly improve the erosion resistance of soil surfaces. Specifically, the critical shear stress (i.e., the minimum shear stress needed to detach individual soil grains) of biopolymer-treated soils increased by 2 to 500 times. The erodibility coefficient (i.e., the rate of increase in erodibility as the shear stress increases) decreased following biopolymer treatment from 1 × 10-2 to 1 × 10-6 times compared to that of untreated river-sands. The scour prediction calculated using the SRICOS-EFA program has shown that a height of 14 m of an untreated surface is eroded during the ten years flow of the Nakdong River, while biopolymer treatment reduced this height to less than 2.5 m. The result of this study has demonstrated the possibility of cross-linked biopolymers for river-bed stabilization agents.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.7
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• pp.4463-4468
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• 2014

To increase the efficiency of a solar module, the development of solar concentrator using a lens or reflection plate is being proceeded actively and the concentrator pursues the a concentration using a lens or an optical device of a concentration rate and designing as a solar tracking system. On the other hand, as the energy density being dissipated as a heat according to the concentration rate increases, the cares should be taken to cool the solar concentrator to prevent the lowering of efficiency of solar cell by the increasing temperature of the solar cell. This study, researched and developed an economical concentrator module system using a low priced reflection optical device. A concentrator was used as a general module to increase the generation efficiency of the solar module and heat generated was emitted by the concentration through the cooling system. To increase the efficiency of the solar concentrator, the cooling system was designed and manufactured. The features of the micro cooling system (MCS) are a natural circulation method by the capillary force, which does not require external power. By using the potential heat in the case of changing the fluid, it is available to realize high performance cooling. The 117W solar modules installed on the reflective plate and the cooling device in the cooling module and the module unit was not compared. The cooling device was installed in the module resulted in a 28% increase in power output.