Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)
- Volume 13 Issue 10
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- Pages.828-833
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- 2000
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- 1226-7945(pISSN)
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- 2288-3258(eISSN)
Characterization of AlN Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy on Si Substrate
실리콘 기판위에 플라즈마 분자선 에피택시를 이용하여 성장된 질화알루미늄 박막의 특성분석
Abstract
Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90