• 센서학회지
• /
• 제23권5호
• /
• pp.332-336
• /
• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• 한국수소및신에너지학회논문집
• /
• 제22권4호
• /
• pp.552-558
• /
• 2011

A 50 kW class rotating body type wave energy converter consisted of two floating bodies and a PTO (Power Takeoff) unit is studied. As an wave energy extractor, the body is designed to have a VLCO (Variable Liquid-Column Oscillator) having a liquid filled U-tube with air chambers. Owing to the oscillation of the liquid in the U-tube caused by the air spring effect of the air chambers, the amplitude of response of the VLCO becomes significantly amplified for a target wave period. The PTO converts the rotational moment introduced from the relative motion of the hinged bodies to an hydraulic power by means of a cylinder. A high pressure accumulator, hydraulic motor and a generator are equipped in the PTO to convert the hydraulic power to electric power. A control law for adjusting the oscillation period of the VLCO is proposed for the efficient operation of the VLCO with various wave conditions. It is found that the effect of the air spring has an important role to play in making the oscillation of the VLCO match with the ocean wave. In this way, the wave energy converter equipped with the VLCO provides the most effective mode for extracting energy from the ocean wave.

• 대한조선학회논문집
• /
• 제30권1호
• /
• pp.45-64
• /
• 1993

본 논문에서는 전 논문 주상체의 비선형운동(I)[16]의 정합방법과 비선형해법을 이용한 원형실린더의 전진동요문제와 파랑중에서의 실린더의 운동에 관한 결과를 중심으로 보고한다. 완전한 물체표면 조건의 부과에 관하여 스펙트럴방법은 잠수된 경우에 적용할 수 있으나 물체가 부유된 경우에 적용이 어렵다. 그러나 본 방법은 어떤 구속없이 완전하게 적용할 수 있고 자유표면에서는 완전한 비선형 자유표면조건을 시간적분하여 추적한다 본 논문에서는 예로 첫째는 원형실린더가 수면하에서 전진하면서 상하동요하는 경우의 동유체력을 계산하여 Grue[6], Kim[12]의 선형계산과 비교하였고 또 다른 적용으로 부유된 원형주상체의 전진동요 문제를 수치적인 어려움 없이 성공적으로 수행하였다. 두번째는 파랑 중에서 주상체의 운동문제에 관한 계산을 수행하였다. 초기조건의 부과를 위해 가상적인 조파기를 설치하여 2차원 수치수조를 만든 다음 잠수된 원형 실린더를 고정시켜서 계산을 수행하여 비선형동유체력을 구하였고 다음은 2차원 실린더가 파랑중에서 운동할 때 계산을 수행했다.

• 센서학회지
• /
• 제30권2호
• /
• pp.114-118
• /
• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

• 한국철도학회:학술대회논문집
• /
• 한국철도학회 2011년도 춘계학술대회 논문집
• /
• pp.78-81
• /
• 2011

Generally, vehicle is insulated from the earth by rubber tire which is intrinsically the insulation material. The electrical ground of vehicle was floated in the sense of electric potential over the electric power sources. First of all, the floated electrical ground of vehicle should be equipotentially connected with the (-) line of electrical equipment. Bimodal tram has the different kinds of electric system. They must be kept insulated to each other electrically. When there is some unbalanced event or connection between them, it will invoke some errors or breakdown to electrical devices including sensors and actuators. This paper has investigated the floating ground effect of bimodal tram built with composite body and shown the effect according to the unbalanced ground of vehicle and the connection between different electric systems.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2001년도 춘계학술대회논문집E
• /
• pp.191-195
• /
• 2001

The applications of magnetic fluid can be normally made by 1) using changes of a property of matter caused by applied magnetic field; 2) preserving magnetic fluid at a certain position or in a magnetic fluid keeping the body in a floating condition; 3) controlling the flow of magnetic fluid by means of magnetic field. However, these are usually made by using their methods together. In this study, the natural convection flow of a magnetic fluid in annular pipes is experimentally analyzed. High temperature is kept constantly inside of a circular pipe of experimental model, on the other hand, low temperature is kept constantly outside of it. In experiments, several cases are carried out in order to clarify the fluence of direction and intensity of magnetic fields on the natural convection of magnetic fluid. Therefore magnetic fields are applied in various intensity and up and down directions by permanent magnets.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 추계종합학술대회 논문집
• /
• pp.545-548
• /
• 1998

Thin film SOI(Silicon-On-Insulator) devices exhibit floating body effect. In this paper, SOI NMOSFET is proposed to solve this problem. Some part of gate oxide was considered to be 30nm~80nm thicker than the other normal gate oxide and simulated with TSUPREM-4. The I-V characteristics were simulated with 2D MEDICI mesh. Since part of gate oxide has different oxide thickness in proposed device, the gate electric field strength is not the same throught the gate and consequently the reduction of current kink effect is occurred.

• 한국전산유체공학회지
• /
• 제9권1호
• /
• pp.18-24
• /
• 2004

The unified simulation for the multiphase flow by predictor-corrector scheme based on CIP method is introduced. In this algorithm, the interface between different phases is identified by a density function and tracked by solving an advection equation. Solid body motion is modeled by the translation and angular motion. The mathematical formulation and numerical results are also described. To verify the efficiency, accuracy and capability of proposed algorithm, two dimensional incompressible cavity flow, the motion of a floating ball into water and a single rising bubble by buoyancy force are numerically simulated by the present scheme. As results, it is confirmed that the present scheme gives an efficient, stable and reasonable solution in the multiphase flow problem.

• 한국전기전자재료학회논문지
• /
• 제25권2호
• /
• pp.96-99
• /
• 2012

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

• 진공이야기
• /
• 제3권1호
• /
• pp.16-21
• /
• 2016

FinFETs are able to be scaled down to 22 nm and beyond while suppressing effectively short channel effect, and have superior performance compared to 2-dimensional (2-D) MOSFETs. Bulk FinFETs are built on bulk Si wafers which have less defect density and lower cost than SOI(Silicon-On-Insulator) wafers. In contrast to SOI FinFETs, bulk FinFETs have no floating body effect and better heat transfer rate to the substrate while keeping nearly the same scalability. The bulk FinFET has been developed at 14 nm technology node, and applied in mass production of AP and CPU since 2015. In the development of the bulk FinFETs at 10 nm and beyond, self-heating effects (SHE) is becoming important. Accurate control of device geometry and threshold voltage between devices is also important. The random telegraph noise (RTN) would be problematic in scaled FinFET which has narrow fin width and small fin height.