• Title/Summary/Keyword: Flexible Electronic Device

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Development of Clamp Current Meter using a Flexible Rogowski Coil (Flexible Rogowski 코일을 이용한 클램프형 전류 센서의 개발)

  • Chang, Yong-Moo;Kim, Seong-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.472-475
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    • 2002
  • A Rogowski coil can measure alternating currents from a few amps to over 1 million amps in a frequency range from less than 0.1 Hz to about lMhz. A Rogowski coil provides an induced output voltage which is proportional to the rate of change of the primary current enclosed by the flexible or the rigid coil-loop. Therefore, it is necessary to integrate the output voltage in order to produce a voltage proportional to the current. Also. it can reproduce the current waveform on an oscilloscope or any type of data acquisition device. This paper describes the practical design of the combination of a Rogowski coil and an integrator which provides a versatile current measuring system to accommodate a wide range of frequencies, current levels and conductor sizes.

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Low-Temperature Processable Charge Transporting Materials for the Flexible Perovskite Solar Cells

  • Jo, Jea Woong;Yoo, Yongseok;Jeong, Taehee;Ahn, SeJin;Ko, Min Jae
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.657-668
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    • 2018
  • Organic-inorganic hybrid lead halide perovskites have been extensively investigated for various optoelectronic applications. Particularly, owing to their ability to form highly crystalline and homogeneous films utilizing low-temperature solution processes (< $150^{\circ}C$), perovskites have become promising photoactive materials for realizing high-performance flexible solar cells. However, the current use of mesoporous $TiO_2$ scaff olds, which require high-temperature sintering processes (> $400^{\circ}C$), has limited the fabrication of perovskite solar cells on flexible substrates. Therefore, the development of a low-temperature processable charge-transporting layer has emerged as an urgent task for achieving flexible perovskite solar cells. This review summarizes the recent progress in low-temperature processable electron- and hole-transporting layer materials, which contribute to improved device performance in flexible perovskite solar cells.

Highly Sensitive Flexible Organic Field-Effect Transistor Pressure Sensors Using Microstructured Ferroelectric Gate Dielectrics

  • Kim, Do-Il;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.277.2-277.2
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    • 2014
  • For next-generation electronic applications, human-machine interface devices have recently been demonstrated such as the wearable computer as well as the electronic skin (e-skin). For integration of those systems, it is essential to develop many kinds of components including displays, energy generators and sensors. In particular, flexible sensing devices to detect some stimuli like strain, pressure, light, temperature, gase and humidity have been investigated for last few decades. Among many condidates, a pressure sensing device based on organic field-effect transistors (OFETs) is one of interesting structure in flexible touch displays, bio-monitoring and e-skin because of their flexibility. In this study, we have investigated a flexible e-skin based on highly sensitive, pressure-responsive OFETs using microstructured ferroelectric gate dielectrics, which simulates both rapidly adapting (RA) and slowly adatping (SA) mechanoreceptors in human skin. In SA-type static pressure, furthermore, we also demonstrate that the FET array can detect thermal stimuli for thermoreception through decoupling of the input signals from simultaneously applied pressure. The microstructured highly crystalline poly(vinylidene fluoride-trifluoroethylene) possessing piezoelectric-pyroelectric properties in OFETs allowed monitoring RA- and SA-mode responses in dyanamic and static pressurizing conditions, which enables to apply the e-skin to bio-monitoring of human and robotics.

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Flexible Energy Harvesting Device based on Hybrid Piezoelectric Nanocomposite made of Lead-Free BCTZ Ceramic and Piezo-polymer (비납계 BCTZ 압전세라믹과 압전폴리머로 제작된 하이브리드 나노복합체 기반의 플렉서블 에너지 하베스팅 소자)

  • Park, Sung Cheol;Lee, Jae Hoon;Kim, Yeon-gyu;Park, Kwi-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.72-79
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    • 2022
  • Piezoelectric energy harvesting technologies, which can be used to convert the electricity from the mechanical energy, have been developed in order to assist or power the wearable electronics. To realize non-toxic and biocompatible electronics, the lead-free (Ba0.85Ca0.15)(Ti0.90Zr0.10)O3 (BCTZ) nanoparticles (NPs) are being studied with a great attention as flexible energy harvesting device. Herein, piezoelectric hybrid nanocomposites were fabricated using BCTZ NPs-embedded poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] matrix to improve the performance of flexible energy harvester. Output performance of the fabricated energy device was investigated by the well-optimized measurement system during the periodically bending and releasing motions. The generated open-circuit voltage and the short-circuit current of the piezoelectric hybrid nanocomposite-based energy harvester reached up to ~15 V and ~1.1 ㎂, respectively; moreover, the instantaneous power of 3.5 ㎼ is determined from load voltage and current at the external load of 20 MΩ. This research is expected to cultivate a new approach to high-performance wearable self-powering electronics.

Design and Implementation of Nanoimprint Lithography System for Flexible Substrates (유연기판을 위한 나노임프린트리소그래피 시스템 설계)

  • Lim, Hyung-Jun;Lee, Jae-Jong;Choi, Kee-Bong;Kim, Gee-Hong;Ryu, Ji-Hyeong
    • Journal of the Korean Society for Precision Engineering
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    • v.28 no.4
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    • pp.513-520
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    • 2011
  • The NIL processes have been studied to implement low cost, high throughput and high resolution application. A RNIL(roller NIL) is an alternative approach to flat nanoimprint lithography. RNIL process is necessary to transfer patterns on flexible substrates. Compared with flat NIL, RNIL has the advantages of better uniformity, less pressing force, and the ability to repeat the patterning process continuously on a large substrate. This paper studies the design, construction and verification of a thermal RNIL system. The proposed RNIL system can easily adopt the flat shaped hot plate which is one of the most important technologies for NIL. The NIL system can be used to transfer patterns from a flexible stamp to a flexible substrate, from a flexible stamp to a Si substrate, and from a roller stamp to a flexible substrate, etc. Patterning on flexible substrates is one of the key technologies to produce bendable displays, solar cells and other applications.

A Flexible Amorphous $Bi_5Nb_3O_{15}$ Film for the Gate Insulator of the Low-Voltage Operating Pentacene Thin-Film Transistor Fabricated at Room Temperature

  • Kim, Jin-Seong;Cho, Kyung-Hoon;Seong, Tae-Geun;Choi, Joo-Young;Nahm, Sahn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.17-17
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    • 2010
  • The amorphous $Bi_5Nb_3O_{15}$ film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-$O_2$ film) has a hydrophobic surface with a surface energy of $35.6\;mJm^{-2}$, which is close to that of the orthorhombic pentacene ($38\;mJm^{-2}$, resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of $145\;nFcm^{-2}$ during and after 10s bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the polyethersulphone substrate at room temperature using a BNRT-$O_2$ film as a gate insulator exhibited a promising device performance with a high field effect mobility of $0.5\;cm^2V^{-1}s^{-1}$, an on/off current modulation of $10^5$ and a small subthreshold slope of $0.2\;Vdecade^{-1}$ under a low operating voltage of -5 V. This device also maintained a high carrier mobility of $0.45\;cm^2V^{-1}s^{-1}$ during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-$O_2$ film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.

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Electrical breakdown free SWCNT thin film transistors on flexible polyimide substrate

  • Park, Jae-Hyeon;Ha, Jeong-Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.58-58
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    • 2010
  • Carbon nanotubes (CNTs) have been extensively studied owing to its superior electrical properties, especially high electron mobility, which can be applied to various nano-electronic devices. However, synthesized CNTs have a mixture of metallic and semiconducting tubes so that their separation has been a tremendous obstacle to the practical application in electronic device structures. Among the different separation methods, electrical breakdown process to selectively burn out the metallic tubes has been quite successful though it needs additional process in the fabrication of device structures. Here, we report on the selective but not perfect growth of semiconducting nanotubes via use of diluted ferritin catalyst. SWCNTs were grown on ferritin catalyst, where the concentration of the ferritin solution was changed. In this way, we could fabricate the electrical breakdown free SWCNT thin film transistors on the flexible polyimide (PI) substrate. When we used the ferritin diluted by 1/2000, ~ 60 % of the SWCNT thin film transistors showed a perfect p-type behavior with an on/off current ratio higher than $10^5$ and on-current greater than $10^{-7}$ A. We will also discuss the photo-response of such formed thin film transistors over both visible and UV light.

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The Study on Implementation of Receiver for Terrestrial DMB (지상파 DMB방송 수신기 개발에 관한 연구)

  • Won, Young-Jin;Na, Hee-Su
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.1011-1012
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    • 2006
  • In this paper, implementation process of standard platform for T-DMB Receiver in low-cost and small-size are following: First, implement SoC for 32 bit RISC CPU and 16 bit DSP, Hardware H.264 CODEC, Post Processor or Video Display, Audio Processor, I/O Device. Second, implement Real Time OS for flexible application. Third, propose simple architecture for interface with peripheral devices using one-chip processor.

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Epoxy solder paste and its applications (에폭시 솔더 페이스트 소재와 적용)

  • Moon, Jong-Tae;Eom, Yong-Sung;Lee, Jong-Hyun
    • Journal of Welding and Joining
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    • v.33 no.3
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    • pp.32-39
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    • 2015
  • With the simplicity of process and high reliability in chip or package bonding, epoxy solder paste (ESP) has been recently considered as a competitive bonding material. The ESP material is composed of solder powder and epoxy formulation which can remove oxide layers on the surface of solder powder and pad finish metal. The bonding formed using ESP shows outstanding bonding strength and suppresses electrical short between adjacent pads or leads owing to the reinforced structure by cured epoxy after the bonding. ESP is also expected to suppress the formation and growth of whisker on the pads or leads. With the mentioned advantages, ESP is anticipated to become a spotlighted bonding material in the assembly of flexible electronics and electronic modules in automotive vehicles.

The Fabrication and Characteristics of White Emission using CCM on Flexible Substrate (플렉시블 무기EL 색변환 백색 발광 소자 제작 및 특성평가)

  • Kim, Gi-Ryoung;Ahn, Sung-Il;Kum, Jeong-Hun;Lee, Heung-Ryeol;Yim, Tae-Hong;Lee, Seong-Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.911-915
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    • 2008
  • EL (electro-luminescent) device as a light source has an advantage in embodying large area with great flexibility. On nickel foil as an electrode and backplane, we demonstrated a white EL flexible light source with blue phosphor layer combined with color change layer. A correlation between color change layer and color coordination was analyzed by Gaussian method, and then the color coordinate was controlled near to (0.33, 0.33) of pure white light.