• Title/Summary/Keyword: Flat panel display (FPD)

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Effects of Deposition Thickness and Oxygen Introduction Flow Rate on Electrical and Optical Properties of IZO Films (증착두께 및 산소도입속도가 IZO 필름의 전기 및 광학적 특성에 미치는 영향)

  • Park, Sung-Hwan;Ha, KiRyong
    • Applied Chemistry for Engineering
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    • v.21 no.2
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    • pp.224-229
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    • 2010
  • Transparent conductive oxide films have been widely used in the field of flat panel display (FPD). Transparent conductive Indium Zinc Oxide (IZO) thin films with excellent chemical stability have attracted much attention as an alternative material for Indium Tin Oxide (ITO) films. In this study, using $In_2O_3$ and ZnO powder mixture with a ratio of 90 : 10 wt% as a target, IZO films are prepared on polynorbornene (PNB) substrates by electron beam evaporation. The effect of thickness and $O_2$ introduction flow rate on the optical, electrical, structural properties and surface composition of deposited IZO films were investigated by UV/Visible spectrophotometer, 4-point probe method, SEM, XRD and XPS.

Single layer antireflection coating on PET substrates for display applications

  • Gowtham, M.;Mangalaraj, D.;Seo, Chang-Ki;Shim, Myung-Suk;Hwang, Sun-Woo;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.988-991
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    • 2004
  • In the present investigation, we tried AR coating simulation by using the "Essential Macleod optical coating design and analysis" program. After various run of the program we selected appropriate materials which have specific refractive indices and for that thickness was optimized to get the low reflectance. By comparing the simulated results for the different materials,we found that $SiO_2$ and TiN are the appropriate materials for this Flat panel device (FPD) application. Thin films of these materials were deposited using RF magnetron sputtering and Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD) methods on Polyethyleneterephthalate (PET) substrates. Spectroscopic ellipsometer (SE MF-1000) and UV-Vis spectrophotometer (SCINCO) were used for the optical characterization. The obtained experimental results are in good agreement with the simulation results.

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An Improved Contrast Control Method for LCD Monitor (LCD 모니터를 위한 개선된 콘트라스트 제어 방식)

  • 김철순;곽경섭
    • Journal of Korea Multimedia Society
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    • v.5 no.6
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    • pp.609-615
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    • 2002
  • In this paper, we propose a contrast for the improvement of multi-gray scale image on display system. The proposed method distinguishes a maximum value and a minimum value in input fields or frames. By this judgement, the improvement degree of image quality is decided. This method does not require field and frame memory. Moreover, its lower hardware complexity than conventional methods make it easy to apply this method for flat panel display(FPD) which requires real-time processing. And the contrast of input gray level can be controled flexibly by varying the weight the weight value which controls the contrast range. The proposed method gives an image by controlling weighting slope selectively at intervals according to the brightness-control algorithm and the type of image in the look-up table. The function of the proposed method has been verified through Synopsys VHDL and computer simulation. And its results show that the proposed method can improve the quality of image.

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Development of LED TV Panel Brightness Uniformity Correction System (LED TV 패널 밝기 균일화 보정 시스템 개발)

  • Park, Je Sung;Lee, Won Woo;Jian, Zhangye;Joo, Hyonam;Kim, Joon Seek
    • Journal of Institute of Control, Robotics and Systems
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    • v.22 no.5
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    • pp.382-388
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    • 2016
  • When Flat Panel Display (FPD) is made with backlight module, such as LED TV, it inherently suffers from the non-uniform backlight luminance problem that results in un-even brightness distribution throughout the TV screen. If the luminance of each pixel location of a TV screen as a function of the driving voltage can be measured, it can be used to compensate the non-uniformity of the backlight module. We use a carefully calibrated imaging system to take pictures of a TV screen at different levels of brightness and generate the compensation functions for the driving circuitry to correct the luminance level at each pixel location. Making use of the fact that the luminance of the screen is normally brightest at around the center of the screen and gradually decreases toward the border of the screen, the luminance of the whole TV screen is approximated by a mathematical function of the pixel locations. The parameters of the function are computed in the least square sense by the values of both the pixel luminance sent from the driving circuit and the grayscale value measured from the image taken by the imaging system. To justify the correction system, a simple second order polynomial function is used to approximate the luminance across the screen. When the driving circuit voltage is corrected according to the measured function, the variance of the screen luminance is reduced to one tenth of the one measured from the un-corrected TV screen.

스퍼터링을 이용한 ITO 박막의 저온 증착

  • Jang, Seung-Hyeon;Lee, Yeong-Min;Yang, Ji-Hun;Jeong, Jae-In
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.263-263
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    • 2010
  • 투명도전막(indium tin oxide; ITO)은 투명하면서도 전기 전도도가 높기 때문에, 액정표시소자(LCD; Liquid Crystal Display), 전자발광소자(ELD; Electroluminescent Display) 및 전자 크로믹 소자(Electrochromic Display)를 포함하는 평판형 표시 소자(FPD; Flat Panel Display)와 태양전지 등에 이용되고 있다. 낮은 비저항과 높은 투과율의 ITO 박막은 $300^{\circ}C$ 이상의 고온에서 코팅해야 하는 것으로 알려져 있다. 그러나 최근 플라스틱과 같은 연성 소자가 전자부품에 널리 이용되면서 ITO를 저온에서 증착해야할 필요성이 대두되고 있다. 본 연구에서는 ITO를 플라스틱에 적용하기 위한 저온 코팅 공정 및 시편의 전 후처리공정을 개발하여 박막의 특성을 알아보고자 한다. 실험에 사용된 기판은 고투과율의 고분자(polyethylene terephthalate; PET) 필름이며 $5\;{\times}\;10\;cm^2$의 크기로 절단하여 알코올로 초음파 세척을 실시하였고, 진공 용기에 장입한 후 펄스전원을 이용하여 3분간 in-situ 청정을 실시하였다. ITO 코팅은 마그네트론 스퍼터링을 이용하였으며, 코팅시간, 전처리, 후처리, 기판온도, 산소유량 등 코팅 조건에 따른 박막의 특성을 조사하였다. ITO 박막의 코팅 조건에 따른 박막의 결정구조 분석은 x-선 회절(x-ray diffraction; XRD)을 이용하였고, 박막의 표면형상과 두께 보정 및 단면의 미세조직과 결정 성장 여부 등은 투과전자 현미경(transmission electron microscope; TEM)을 이용하여 분석하였다. 또한 ITO 박막의 면저항과 분광특성은 four-point Probe (CMP-100MP, Advanced Instrument Technology), spectrophotometer (UV-1601, SHIMADZU)를 이용하여 측정하였다. ITO 박막의 광학특성 분석 결과 전광선 투과율은 두께에 따라 변화 하였지만, 색차와 Haze 값은 증착 조건에 따라 큰 차이는 보이지 않았다. 그리고 박막의 결정화에 영향을 주는 가장 중요한 인자는 기판온도이지만, 기판온도를 높이지 못할 경우 비평형 마그네트론(unbalanced-magnetron; UBM)에 의해서 플라즈마 밀도를 높이는 방법으로 유사한 효과를 얻을 수 있음을 확인하였다.

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Emission Characteristics of VOCs Distributions in Semiconductor Workplace (반도체 작업환경의 VOCs 농도분포 특성)

  • Lee, Jeong Joo
    • Journal of the Korean Society of Urban Environment
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    • v.18 no.4
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    • pp.503-509
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    • 2018
  • In this study, a Proton-Transfer Reaction-Time-of-Flight Mass spectrometer (PTR-TOF-MS) was used for the continuous monitoring of Volatile Organic Compounds (VOCs) emitted from semiconductor workplace such as photolithography (PHOTO), flat panel display (FPD), organic light emitting diode (OLED), etching (WET) process. The averaged VOCs mixing ratio in the such workplace, PHOTO was 6.5 ppm, FPH was 6.4 ppm, WET was 2.0 ppm and OLED was 1.3 ppm, respectively. The abundance of VOCs in the workplace were methyl ethyl ketone (MEK) with 2.8 ppm (69%) and acetaldehyde with 0.5 ppm (13.2%). Depending on the semiconductor process characteristics, various VOCs have been observed in the workplace. The VOCs mixing ratio are lower than the workplace regulation standard (TWA), it is necessary to continuously monitor and effectively manage these VOCs.

열처리 방법에 따른 ZTO/Ag/ZTO 다층박막의 특성 개선

  • Gong, Tae-Gyeong;Mun, Hyeon-Ju;Son, Dong-Il;Choe, Dong-Hyeok;Kim, Dae-Il
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.179.2-179.2
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    • 2015
  • 오늘날 평판표시장치(Flat Panel Display; FPD)는 대면적화, 고정밀화를 요구하고 있으며, 이에 따라 TCO에 요구되는 사양이 점점 까다로워지고 있다. ITO의 사용량을 절감하면서 동시에 우수한 투과도와 전기전도도를 얻기 위해 산화물/금속/산화물 구조와 같이 금속층을 투명 전도막 재료 사이에 삽입한 다층구조의 투명 전도성 필름에 대한 연구가 활발히 진행되고 있다. 산화물/금속/산화물 구조의 다층 박막은 기판상에 Antireflection 코팅으로 사용되어 왔으나 최근 투명 전극 분야에 응용되고 있다. 본 연구에서는 최적의 ZTO/Ag/ZTO 다층박막에 100, 200, $300^{\circ}C$ 열처리와 200W-300, 500, 700 eV 전자빔 조사를 실시하여 특성을 비교하여 보았다. 열처리는 $300^{\circ}C$, 전자빔조사는 200W-700 eV 일 때 가장 좋은 효과가 나타났다. 가장 좋은 두 조건을 비교했을 때 전자빔 조사의 경우 비저항 $7.25{\times}10^{-5}{\Omega}cm$, 투과도 84.2%, Figure of Merit $2.8{\times}10^{-2}[{\Omega}-1]$로 열처리에 비해 좋은 특성을 나타냄을 알수 있었다.

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Low Temperature Poly-Si TFTs with Excimer Laser Annealing on Plastic Substrates (플라스틱 기판위에 엑시머 레이저 열처리된 저온 다결정 실리콘 박막 트랜지스터)

  • Choi, Kwang-Nam;Kwak, Sung-Kwan;Kim, Dong-Sik;Chung, Kwan-Soo
    • 전자공학회논문지 IE
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    • v.43 no.2
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    • pp.11-15
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    • 2006
  • In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

Low Temperature Deposition of ITO Thin Films for Flat Panel Displays by ICP Assisted DC Magnetron Sputtering (유도결합 플라즈마(ICP) Sputtering에 의한 평판 디스플레이(FPD)용 ITO 박막의 저온 증착)

  • 구범모;정승재;한영훈;이정중;주정훈
    • Journal of the Korean institute of surface engineering
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    • v.37 no.3
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    • pp.146-151
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    • 2004
  • Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was >85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

Development of Elimination Method of Measurement noise to Improve accuracy for White Light Interferometry (백색광 간섭계의 정밀도 향상을 위한 노이즈 제거 방법)

  • Ko, Kuk-Won;Cho, Soo-Yong;Kim, Min-Young
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.519-522
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    • 2008
  • As industry of a semiconductor and LCD industry have been rapidly growing, precision technologies of machining such as etching and 3D measurement are required. Stylus has been important measuring method in traditional manufacturing process. However, its disadvantages are low measuring speed and damage possibility at contacting point. To overcome mentioned disadvantage, non-contacting measurement method is needed such as PMP(Phase Measuring Profilometry), WSI(white scanning interferometer) and Confocal Profilometry. Among above 3 well-known methods, WSI started to be applied to FPD(flat panel display) manufacturing process. Even though it overcomes 21t ambiguity of PMP method and can measure objects which has specular surface, the measuring speed and vibration coming from manufacturing machine are one of main issue to apply full automatic total inspection. In this study, We develop high speed WSI system and algorithm to reduce unknown noise. The developing WSI and algorithm are implemented to measure 3D surface of wafer. Experimental results revealed that the proposed system and algorithm are able to measure 3D surface profile of wafer with a good precision and high speed.