• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.1
• /
• pp.22-27
• /
• 2007

we have been studied on the realization of the boundary layer controlled ozone process and related facilities in order to apply for the photo-resist strip process in the semiconductor and flat panel display manufacturing. By means of developing the technology for the high concentration ozone production, it was possible to realized the boundary layer control ozone process by vapor. As a result of the silicon wafer PR strip test, we obtained the strip rate of about 400nm/min at the ozone concentration of 16wt% and flow rate of 8[liter/min.].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.202-205
• /
• 2002

Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently future high-resolution, high-performance flat panel display technology However, it was very difficult to fabricate high performance poly-Si TFTs at a temperature lower than 300$^{\circ}C$ for glass substrate. Conventional process on a glass substrate were limited temperature less than 600$^{\circ}C$ This paper proposes a high temperature process above 750$^{\circ}C$ using a flexible molybdenum substrate deposited hydrogenated amorphous silicon (a-Si:H) and than crystallized a rapid thermal processor (RTP) at the various temperatures from 750$^{\circ}C$ to 1050$^{\circ}C$. The high temperature annealed poly-Si film illustrated field effect mobility higher than 30 $\textrm{cm}^2$/Vs, achieved I$\sub$on//I$\sub$off/ current ratio of 10$^4$ and crystall volume fraction of 92%. In this paper, we introduce the new TFTs Process as flexible substrate very promising roll-to-roll process, and exhibit the properties of high temperature crystallized poly-Si Tn on molybdenum substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04b
• /
• pp.57-60
• /
• 2002

In generally, the guest-emitter doped system has been reported to give a bright electroluminescence(EL). The purpose of using doped system is to improve for increasing lifetime and efficiency, and tuning multicolor light. This indicates an enhanced electron-hole recombination rate in emitting layer. The purpose of this study is to obtain the high performance EL devices for flat panel display with red emission. We fabricated EL devices using the guest-host system. where DCM derivatives were taken as a dopant. The devices are fabricated in multilayer system with various concentration of the dopant (red light emitting dye). We measured the I-V characteristics and EL spectra from these devices. and we compared with photoluminescence(PL) quantum yield among the DCM derivatives. The emission mechanism of devices is participated in energy transfer. The energy transfer from these hosts to DCM generates luminescence spectra that vary from yellow red to red, depending on DCM derivatives. Absorption and emission spectra of organic materials composing the devices depend on the emission materials doped with the DCM derivatives. We demonstrated that the high EL efficiency can be achieved by doping host material with DCM derivatives and molecular steric structures

• Journal of Institute of Control, Robotics and Systems
• /
• v.14 no.4
• /
• pp.385-391
• /
• 2008

To effectively cope with a complexity of kinematic metrology due to workspace enlargement of the planar stage, the linear induction motor is suggested as its new driving source. Especially, the linear induction motor under uniform plate type of secondary doesn't inherently have a periodical force ripple which is generally shown in the brushless DC motor. But, it presents a poor transient characteristic at zero or low speed zone owing to time delay of flux settling, resulting in slow response. To improve the servo property of linear induction motor and apply successfully it to the precision stage, this paper discusses a modified vector control methodology. The controller has a novel input form, fixed d-axis current, q-axis current and forward-fed DC current, to control thrust force and normal force of the linear induction motor independently. Influence of the newly introduced input and the feasibility of controller are validated experimentally.

• 전자공학회논문지 IE
• /
• v.43 no.2
• /
• pp.11-15
• /
• 2006

In this paper characteristics of polycrystalline silicon crystallized by excimer laser on plastic substrate under 150$^{\circ}C$ is investigated. Amorphous silicon is deposited by rf-magnetron sputter in atmosphere of Ar and He for preventing depletion effect by dehydrogenation as deposition by PECVD. After annealing by 308 nm, 30 Hz, double pulse type XeCl excimer laser, p-chnnel low temperature polycrystalline silicon TFT which maximum mobility is $64cm^2/V{\cdot}s$ at $344mJ/cm^2$ is fabricate.

• Journal of the Korean Society for Precision Engineering
• /
• v.30 no.7
• /
• pp.702-708
• /
• 2013

The white-light scanning interferometer (WSI) is an effective optical measurement system for high-precision industries (e.g., flat-panel display and electronics packaging manufacturers) and semiconductor manufacturing industries. Its major disadvantages include a slow image-capturing speed for interferogram acquisition and a high computational cost for peak-detection on the acquired interferogram. Here, a WSI system is proposed for the semiconductor inspection process. The new imaging acquisition technique uses an 'on-the-fly' imaging system. During the vertical scanning motion of the WSI, interference fringe images are sequentially acquired at a series of pre-defined lens positions, without conventional stepwise motions. To reduce the calculation time, a parallel computing method is used to link multiple personal computers (PCs). Experiments were performed to evaluate the proposed high-speed WSI system.

• Journal of Institute of Control, Robotics and Systems
• /
• v.22 no.7
• /
• pp.557-561
• /
• 2016

Recently, in the manufacturing process of flat panel displays, mass production methods of inline system has been emerged. In particular the next generation OLED display manufacturing process, horizontal inline evaporation process has been tried. It is important for the success of OLED inline evaporation process to develop a magnetic levitation transport system capable of transferring a carrier equipped with a mother glass with high accuracy without any physical contact along the rail under vacuum condition. In the case of existing wheel-based transfer system, it is not suitable for OLED evaporation process requiring high cleanliness. On the other hand, the magnetic levitation transport system has an advantage that it does not generate any dust and it is possible to achieve high-precision control because there are not non-linear factors such as friction force. In this paper, we introduce the high-precision magnetic levitation transport system, which is currently under development, for OLED evaporation process.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.04a
• /
• pp.19-25
• /
• 2000

Dielectric polymer films produced from benzocyclobutene (BCB) formulations (CYCLOTENE＊ family resins) are known to possess many desirable properties for microelectronic applications; for example, low dielectric constant and dissipation factor, low moisture absorption, rapid curing on hot plate without reaction by-products, minimum shrinkage in curing process, and no Cu migration issues. Recently, BCB-based products for thick film applications have been developed, which exhibited excellent dissipation factor and dielectric constant well into the GHz range, 0.002 and 2.50, respectively. Derived from these properties, the applications are developed in: bumping/wafer level packaging, Ga/As chip ILD, optical waveguide, flat panel display, and lately in BCB-coated Cu foil for build-up board. In this paper, we review the relevant properties of BCB, then the application areas in bumping/wafer level packaging and BCB-coated Cu foil for build-up board.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.137-140
• /
• 2004

We treated $O_2$ plasma on ITO thin film using RIE (Reactive Ion Etching) system, and analyzed the ingredient of ITO thin film according to change of processing conditions. The ingredient analysis of ITO thin film was used by EDS (Energy Dispersive Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) to compare and analyze the ingredient of bulk and surface. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM (Atomic Force Microscope). Finally, we fabricated OLEDs (Organic Light-Emitting Diodes) device using substrate that was treated optimum ITO surface. The result of the study for electrical and optical properties using I V L System (Flat Panel Display Analysis System), we confirmed that electrical properties (I-V) and optical properties (L-V) were improved.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.336.2-336.2
• /
• 2014

Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.