• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2167-2169
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• 1999

A pulse transformer producing pulses with the peak power of 200-MW (400 kV 500 A at load side with $4.4{\mu}s$ flat-top) is required to drive the 80-MW pulsed klystron in the PLS linac. We have designed and manufactured the high power pulse transformer with 1 : 17 turn ratio. Its primary functions are to match the impedance of klystron tube to the modulators, and to provide step-up of the voltage. To obtain a fast rise time of the pulse voltage. Low leakage inductance and low distributed capacitance design is very important. In this paper, we discuss the equivalent circuit analysis of the pulse transformer, and present the full power performance test results of pulse transformer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.107-116
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• 1994

In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI$_3$. Under constant current F-N stress, MOS capacitors with in-situ doped amorphous Si gate have shown the best resistance to degradation in reliabilty properties such as increase of leakage current, shift of gate voltage (V$_{g}$). shift of flat band voltage (V$_{fb}$) and charge to breakdown(Q$_{bd}$). Also, MOSFETs with in-situ doped amorphous Si gate have shown to have less degradation in transistor properties such as threshold voltage, transconductance and drain current. These improvements observed in MOS devices with in-situ doped amorphous Si gate is attributed to less local thinning spots at the gate/SiO$_2$ interface, caused by the large grain size and the smoothness of the surface at the gate/SiO$_2$ interface.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.5 s.248
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• pp.446-456
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• 2006

The effect of relative position of the stationary turbine blade for the fixed vane has been investigated on blade tip and shroud heat transfer. The local mass transfer coefficients were measured on the tip and shroud fur the blade fixed at six different positions within a pitch. A low speed stationary annular cascade with a single turbine stage was used. The chord length of the tested blade is 150 mm and the mean tip clearance of the blade having flat tip is 2.5% of the blade chord. A naphthalene sublimation technique was used for the detailed mass transfer measurements on the tip and the shroud. The inlet flow Reynolds number based on chord length and incoming flow velocity is fixed to $1.5{\times}10^5$. The results show that the incoming flow condition and heat transfer characteristics significantly change when the relative position of the blade changes. On the tip, the size of high heat/mass transfer region along the pressure side varies in the axial direction and the difference of heat transfer coefficient is up to 40% in the upstream region of the tip because the position of flow reattachment changes. On shroud, the effect of tip leakage vortex on the shroud as well as tip gap entering flow changes as the blade position changes. Thus, significantly different heat transfer patterns are observed with various blade positions and the periodic variation of heat transfer is expected with the blade rotation.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.4 s.235
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• pp.495-503
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• 2005

Experiments were conducted in a low speed stationary annular cascade to investigate local heat transfer characteristics on the tip and shroud and the effect of inlet Reynolds number on the tip and shroud heat transfer. Detailed mass transfer coefficients on the blade tip and the shroud were obtained using a naphthalene sublimation technique. The turbine test section has a single stage composed of sixteen guide vanes and blades. The chord length and the height of the tested blade are 150 mm and about 125 mm, respectively. The blade has flat tip geometry and the mean tip clearance is about $2.5{\%}$of the blade chord. The inlet flow Reynolds number based on chord length and incoming flow velocity is changed from $1.0{\times}10^{5}\;to\;2.3{\times}10^{5}.$ to investigate the effect of Reynolds number. Flow reattachment after the recirculation near the pressure side edge dominates the heat transfer on the tip surface. Shroud surface has very intricate heat/mass transfer distributions due to complex flow patterns such as acceleration, relaminarization, transition to turbulent flow and tip leakage vortex. Heat/mass transfer coefficient on the blade tip is about 1.7 times as high as that on the shroud or blade surface. Overall averaged heat/mass transfer coefficients on the tip and shroud are proportional to $Re_{c}^{0.65}\;and\;Re_{c}^{0.71},$ respectively.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.135-145
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• 2006

This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1297-1300
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• 2008

A conventional linear accelerator system requires a flat-topped pulse with less than ${\pm}$ 0.5% ripple to meet the beam energy spread requirements and to improve pulse efficiency of RF systems. A pulse transformer is one of main determinants on the output pulse voltage shape. The pulse transformer was investigated and analyzed with the pulse response characteristics using a simplified equivalent circuit model. The damping factor ${\sigma}$ must be >0.86 to limit the overshoot to less than 0.5% during the flat-top phase. The low leakage inductance and distributed capacitance are often limiting factors to obtain a fast rise time. These parameters are largely controlled by the physical geometry and winding configuration of the transformer. A rise time can be improved by reducing the number of turns, but it produces larger pulse droop and requires a larger core size. By tradeoffs among these parameters, the high-voltage pulse transformer with a pulse width of 10 ${\mu}s$, a rise time of 0.84 ${\mu}s$, and a pulse droop of 2.9% has been designed and fabricated to drive a klystron which has an output voltage of 284 kV, 30-MW peak and 60-kW average RF output power. This paper describes design optimization of a high-voltage pulse transformer for high-power pulsed applications. The experimental results were analyzed and compared with the design. The design and optimal tuning parameter of the system was identified using the model simulation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.371-377
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• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1330-1336
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• 1994

Ta2O5 films were deposited on the p-Si(100) substrates by ECR-PECVD and annealed in O2 atmosphere. The thicknesses of Ta2O5/SiO2 layers were measured by an ellipsometer and a cross-sectional TEM. Annealing in O2 atmosphere enhanced the stoichiometry of the Ta2O5 film and reduced the impurity carbon content. Ta2O5 films were crystallized at the annealing temperatures above 75$0^{\circ}C$. The best leakage current characteristics and the maximum dielectric constant of Ta2O5/SiO2 film capacitor were observed in the specimen annealed at $700^{\circ}C$ and 75$0^{\circ}C$, respectively. The flat band voltage of the Al/Ta2O5/SiO2/p-Si MOS capacitor was varied in the range of -0.6~-1.6 V with the annealing temperature. The conduction mechanism in the Ta2O5 film, the variation of the effective oxide charge density with the annealing temperature, and the effective electric field distribution in the Ta2O5/SiO2 double layer were also discussed.

• Journal of Power Electronics
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• v.11 no.1
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• pp.97-104
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• 2011

This paper proposes a new alternating current driving method for highly capacitive loads such as plasma display panels or piezoelectric actuators, etc. In the proposed scheme, a current balance transformer, which has two windings with the same turn-ratio, provides not only a resonance inductance for energy recovery but also a current balance among all of the switching devices of the driver for current stress reduction. The smaller conduction loss than conventional circuits occurs due to the dual conduction paths which are parallel each other in the current balance transformer. Also, the leakage inductances of the transformer are utilized as resonant inductors for energy recovery by the series resonance to the capacitive load. Furthermore, the resonance contributes to the small switching losses of the switching devices by soft-switching operation. To confirm the validity of the proposed circuit, prototype hardware with a 12-inch mercury-free flat fluorescent lamp is implemented. The experimental results are compared with a conventional energy-recovery circuit from the perspective of luminance performances.