• Proceedings of the Korean Society of Computer Information Conference
• /
• 2019.07a
• /
• pp.83-84
• /
• 2019

제안 방법은 Visual Studio 2017 API 와 C++을 사용하여 2D 액션 게임은 스피드 와 3개의 스킬을 추가하여 게임 내에서 더 화려하게 싸울 수 있도록 하였으며 1 : 1 대전으로 인하여 게임의 몰 입도가 높다는게 특징이다. 제안 게임은 1 : 1 대전에 알맞은 분위기를 위해 어두운 배경 및 울퉁불퉁한 2D지형을 사용하여 C++ 의 코드를 이용하여 2D 애니매이션을 사용한다.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.5
• /
• pp.250-253
• /
• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• Transactions of Materials Processing
• /
• v.11 no.2
• /
• pp.179-186
• /
• 2002

In the finite element analysis of metal forming Processes using general Lagrangian formulation, element nodes in the mesh move and elements are distorted as the material is deformed. The excessive degeneracy of mesh interrupts finite element analysis and thus increases the error of plastic deformation energy, In this study, a remeshing scheme using so-called mesh compression method is proposed to effectively analyze the flash which is generated usually in hot forging processes. In order to verify the effectiveness of the method, several examples are tested in two-dimensional and three-dimensional problems.

• Proceedings of the Korea Contents Association Conference
• /
• 2015.05a
• /
• pp.321-322
• /
• 2015

현재 한국인 3명중 1명이 매일같이 접속하여 즐기는 국민 콘텐츠로 '웹툰'을 들 수 있다. 웹툰에 플래시를 활용하여 무빙카툰식의 절제된 애니메이션 타이밍 포즈를 연구하고 그 자체의 재미와 움직임의 재미를 더해 여러 콘텐츠에 활용할 수 있다고 본다.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.3
• /
• pp.7-11
• /
• 2017

In this paper, we have studied the characteristics of NAND Flash memory in SONOS Poly-Si Thin Film Transistor (Poly-Si TFT) device. Source/drain junctions(S/D) of cells were not implanted and selective transistors were located in the end of cells. We found the optimum conditions of process by means of the estimation for the doping concentration of channel and source/drain of selective transistor. As the doping concentration was increased, the channel current was increased and the characteristic of erase was improved. It was believed that the improvement of erase characteristic was probably due to the higher channel potential induced by GIDL current at the abrupt junction. In the condition of process optimum, program windows of threshold voltages were about 2.5V after writing and erasing. In addition, it was obtained that the swing value of poly Si TFT and the reliability by bake were enhanced by increasing process temperature of tunnel oxide.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
• /
• v.28 no.6
• /
• pp.669-676
• /
• 2010

Visualization requires for effective analysis of the spatial data collected by various sensors. The best way to convey 3D digital spatial information which is modeling of the real world to the users, realistic 3D visualization and display technology. Since most of the display is based on 2D or 2.5D projection to the plane, there is limitation in representing real world in 3D space. In this paper, data from airborne LiDAR for topographic mapping, Flashi-LiDAR as emerging sensor with great potential to 3D data acquisition, and multibeam echo-sounder for underwater measurement, were stereoscopically visualized. 3D monitors are getting popular and could be information media and platform in geoinformatics. Therefore, study on creating 3D stereoscopic contents of spatial information is essential for new technology of stereo viewing systems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.307-307
• /
• 2014

정보화 시대로 접어들면서 동일한 공간에 더 많은 정보를 저장할 수 있고, 보다 빠른 동작이 가능한 비휘발성 메모리 소자에 대한 요구가 증가하고 있다. 하지만, 최근 비휘발성 메모리 소자 관련 연구보고에 따르면, 메모리 소자의 소형화 및 직접화 측면에서, 전하 저장을 기반으로 하는 기존의 Floating-Gate(FG) Flash 메모리는 20 nm 이하 공정에서 한계가 예측 되고 있다. 따라서, 이러한 FG Flash 메모리의 한계를 해결하기 위해, 기존에 FET 기반의 FG Flash 구조와 같은 3 terminal이 아닌, Diode와 같은 2 terminal로 동작이 가능한 ReRAM, PRAM, STT-MRAM, PoRAM 등 저항변화를 기반으로 하는 다양한 종류의 차세대 메모리 소자가 연구되고 있다. 그 중, 저항 변화 메모리(ReRAM)는 CMOS 공정 호환성, 3D 직접도, 낮은 소비전력과 빠른 동작 속도 등의 우수한 동작 특성을 가져 차세대 비휘발성 메모리로 주목을 받고 있다. 또한, 상하부 전극의 2 terminal 만으로 소자 구동이 가능하기 때문에 Passive Crossbar-Array(CBA)로 적용하여 플래시 메모리를 대체할 수 있는 유력한 차세대 메모리 소자이다. 하지만, 이를 현실화하기 위해서는 Passive CBA 구조에서 발생할 수 있는 Read Disturb 현상, 즉 Word-Line과 Bit-Line을 통해 선택된 소자를 제외하고 주변의 다른 소자를 통해 흐르는 Sneak Leakage Current(SLC)를 차단하여 소자의 메모리 State를 정확히 sensing하기 위한 연구가 선행 되어야 한다. 따라서, 현재 이러한 이슈를 해결하기 위해서, 많은 연구 그룹에서 Diodes, Threshold Switches와 같은 ReRAM에 Selector 소자를 추가하는 방법, 또는 Self-Rectifying 특성 및 CRS 특성을 보이는 ReRAM 구조를 제안 하여 SLC를 차단하고자 하는 연구가 시도 되고 있지만, 아직까지 기초연구 단계로서 아이디어에 대한 가능성 정도만 보고되고 있는 현실 이다. 이에 본 논문은 Passive CBA구조에서 발생하는 SLC를 해결하기 위한 새로운 아이디어로써, 본 연구 그룹에서 선행 연구로 확보된 안정적인 저항변화 물질인 SiN를 정류 특성을 가지는 n-Si/Ti 기반의 Schottky Diode와 결합함으로써 기존의 CBA 메모리의 Read 동작에서 발생하는 SLC를 차단 할 수 있는 1SD-1R 구조의 메모리 구조를 제작 하였으며, 본 연구 결과 기존에 문제가 되었던 SLC를 차단 할 수 있었다.

• Proceedings of the Acoustical Society of Korea Conference
• /
• autumn
• /
• pp.173-176
• /
• 1999

In this work, a A/D converter is implemented to obtain 8bit resolution at a conversion rate of 10Msample/s for video applications. Proposed architecture is designed low power A/D converter that pipelined architecture consists of flash A/D converter. This architecture consists of two identical stages that consist of sample/hold circuit, low power comparator, voltage reference circuit and MDAC of binary weighted capacitor array. Proposed A/D converter is designed using $0.25{\mu}m$ CMOS technology The SNR is 76.3dB at a sampling rate of 10MHz with 3.9MHz sine input signal. When an 8bit 10Msample/s A/D converter is simulated, the Differential Nonlinearity / Integral Nonlinearity (DNL/ INL) error are ${\pm}0.5/{\pm}2$ LSB, respectively. The power consumption is 13mW at 10Msample/s.

• Journal of the Institute of Convergence Signal Processing
• /
• v.9 no.3
• /
• pp.224-229
• /
• 2008

In the paper, a new Constraint algorithm is proposed to solve the fan-in problem occurred in the encoding circuitry of an ADC. The Flash ADC architecture uses a Double-Base Number System(DBNS). The DBNS has been known to represent the Multidimensional Logarithmic Number System (MDLNS) used for implementing the multiplier accumulator architecture of FIR filter in Digital Signal Processing (DSP) applications. The authors use the DBNS with the base 2 and 3 in designing ADC encoder circuits, which is called as Double Base Integer Encoder(DBIE). A symmetric map is analyzed first, and then asymmetric map is followed to provide addition ready DBNS for DSP circuitry. The simulation results of the DBIE circuits in 6-bit and 8-bit ADC show the effectiveness of the Constraint algorithm with $0.18{\mu}m$ CMOS technology. The DBIE yields faster processing speed compared to the speed of Fat Tree Encoder (FAT) circuits by 17% at more power consumption by 39%.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.12
• /
• pp.53-60
• /
• 2005

This work proposes a 10b 100 MS/s $1.4\;mm^2$ CMOS ADC for low-power multimedia applications. The proposed two-step pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The wide-band SHA employs a gate-bootstrapping circuit to handle both single-ended and differential inputs with 1.2 Vp-p at 10b accuracy while the second-stage flash ADC employs open-loop offset sampling techniques to achieve 6b resolution. A 3-D fully symmetrical layout reduces the capacitor and device mismatch of the first-stage MDAC. The low-noise references are integrated on chip with optional off-chip voltage references. The prototype 10b ADC implemented in a 0.18 um CMOS shows the maximum measured DNL and INL of 0.59 LSB and 0.77 LSB, respectively. The ADC demonstrates the SNDR of 54 dB, the SFDR of 62 dB, and the power dissipation of 56 mW at 100 MS/s.