• Industrial Engineering and Management Systems
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• v.11 no.2
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• pp.183-187
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• 2012

In this paper, we study the fixed charge transportation problem with uncertain variables. The fixed charge transportation problem has two kinds of costs: direct cost and fixed charge. The direct cost is the cost associated with each source-destination pair, and the fixed charge occurs when the transportation activity takes place in the corresponding source-destination pair. The uncertain fixed charge transportation problem is modeled on the basis of uncertainty theory. According to inverse uncertainty distribution, the model can be transformed into a deterministic form. Finally, in order to solve the uncertain fixed charge transportation problem, a numerical example is given to show the application of the model and algorithm.

• Journal of KIISE:Software and Applications
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• v.32 no.8
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• pp.752-758
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• 2005

The transportation problem (TP) is known as one of the important problems in Industrial Engineering and Operational Research (IE/OR) and computer science. When the problem is associated with additional fixed cost for establishing the facilities or fulfilling the demand of customers, then it is called fixed charge transportation problem (fcTP). This problem is one of NP-hard problems which is difficult to solve it by traditional methods. This paper aims to show the application of spanning-tree based Genetic Algorithm (GA)approach for solving nonlinear fixed charge transportation problem. Our new idea lies on the GA representation that includes the feasibility criteria and repairing procedure for the chromosome. Several numerical experimental results are presented to show the effectiveness of the proposed method.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.362-364
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• 2016

본 논문에서는 MOS(Metal Oxide Semiconductor) Capacitor의 산화막내에 다양한 원인에 의해 존재하는 비이상적인 전하들 중 Fixed Oxide Charge가 소자의 문턱전압에 어떤 영향을 주는지 분석했다. 분석한 결과 n+ polysilicon Gate를 가지고, 산화막인 $SiO_2$의 두께가 3nm이고, 도핑농도가 $10^{18}cm^{-2}$인 P형 실리콘 기판으로 이루어진 MOS Capacitor에서 Fixed Oxide Charge Density가 $C/cm^2$ 이상일 때 문턱전압을 0.01V 이상 감소시키고 $C/cm^2$ 이하일 때 문턱전압을 0.01V 이상 증가시켰다.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.377-379
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• 1989

Very thin gate oxide(100-300A) MOS capacitor has been fabricated. The effect of series resistance must be calculated and the exact metal-semiconductor work function difference should be obtained to get the fixed oxide charge density exisiting in oxide. Dilute oxidation make sagy to control oxide thickness and reduce fixed oxide charge density. In case of dilute oxidation, fixed oxide charge density depends on oxidation time. If oxide is very thin, the annealing effect is ignored.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.155-158
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• 1988

The fabrication of devices using plans technology could lend to n serious degradation in the breakdown voltage as a result of high electric field at the edges. An elegant approach to reducing the electric field at the edge is by using field limiting ring. The presence of surface charge has n strong influrence on the depletion layer spreading at the surface region because this charge complements the charge due to the ionized acceptors inside the depletion layer. Surface charge of either polarity can lower the breakdown voltage because it affects the distribution of electric field st the edges. In this paper we discuss the influrences of fixed oxide charge on the breakdown voltage of the p+/n junction with field limiting ring(or without field limiting ring).

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.820-824
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• 1992

An accurate method for extracting both Si film doping concentration and front or back silicon-to-oxide fixed charge density of fully depleted SOI devices is proposed. The method utilizes the current-to-voltage and capacitance-to-voltage characteristics of both SOI NMOSFET and PMOSFET which have the same doping concentration. The Si film doping concentration and the front or back silicon-to-oxide fixed charge density are extracted by mainpulating the respective threshold voltages of the SOI NMOSFET and PMOSFET according to the back surface condition (accumulation or inversion) and the capacitance-to-voltage characteristics of the SOI PMOSFET. Device simulations show that the proposed method has less than 10% errors for wide variations of the film doping concentration and the front or the back silicon-to-oxide fixed charge density.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.12B
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• pp.1112-1121
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• 2006

This Paper deals with the model of fixed-mobile interconnection. Specifically, how interconnection charge and originating price are determined when there is customer ignorance about terminating network or the price. This paper shows that the terminating charge with customer ignorance is higher than without that, and therefore the retail price becomes higher. This paper discusses the several methods to prevent the increase of the retail price and suggests the scheme to regulate the retail price and interconnection charge, simultaneously.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.1B
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• pp.34-46
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• 2009

The remarkable growth of Korean telecommunication market has based on the introduction of competition as well as mobile technology like CDMA. It was well Down that such a conspicuous growth has been towed by mobile service rather than fixed telephone service. In telecommunications service the number of subscribers to mobile was over 40 millions in 2006 and also, while the traffic amount of fixed telephone has been more decreased, that of mobile, which already outnumbers the fixed, has been constantly increased and will be much more in future. It will accelerate the substitution of access and call demand of fixed service by mobile. This change of technology and demand does affect directly the market performance of telecommunications. And regulation has also an effect on market structure, which finally affects on market performance. In this paper we suppose the fixed and mobile telecommunications services are in a same industry. After reviewing the relations among the demand, cost, charge structure and revenue structure in the one fixed and mobile telecommunications market using the framework of an industrial structure analysis, we discuss the current issues of telecommunications regulation and implications for the future regulation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.793-796
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• 2008

본 논문은 생산 물류 시스템최적화의 실현에 가장 대표적인 생산수송계획문제인 수송문제(TP: Transportation Problem)에 고정비용을 고려한 고정비용 수송문제(fcTP: Fixed charge Transportation Problem)를 다룬다. 특히 NP-hard문제로 널리 알려진 TP에서 수송량에 비례하는 가변비용과 함께 추가적으로 모든 경로에서 발생하는 고정비용을 함께 고려한 fcTP를 다룬다. 따라서 이러한 fcTP를 해결하기 위해 메타 휴리스틱기법 중에 가장 널리 이용되고 있는 유전 알고리즘(CA: Genetic Algorithm)을 이용한 해법을 제시하고자 한다. 본 논문에서는 CA를 이용해 고정비용 수송문제의 해를 우선순위기반 유전자 표현법을 이용해 fcTP에 적용해 보고 수치 실험을 통해 그 성능에 대한 연구를 한다.

• Journal of Korean Institute of Industrial Engineers
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• v.31 no.1
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• pp.79-86
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• 2005

The transportation problem (TP) is one of the traditional optimization problems. Unlike the TP, the fixed charge transportation problem (FCTP) cannot be solved using polynomial time algorithms. So, finding solutions for the FCTP is a well-known NP-complete problem involving an importance in a transportation network design. So, it seems to be natural to use evolutionary algorithms for solving FCTP. And many evolutionary algorithms have tackled this problem and shown good performance. This paper introduces an efficient evolutionary algorithm for the FCTP. The proposed algorithm can always generate feasible solutions without any repair process using the random key representation. Especially, it can guide the search toward the basic solution. Finally, we performed comparisons with the previous results known on the benchmark instances and could confirm the superiority of the proposed algorithm.