대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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박막 MOS 구조의 고정표면전하에 관한 연구

A Study of fixed oxide charge in thin flim MOS structure

  • Yu, Seok-Bin (Department of Electrical Engineering, Chung-Ang University) ;
  • Kim, Sang-Yong (Department of Electrical Engineering, Chung-Ang University) ;
  • Seo, Yong-Jin (Department of Electrical Engineering, Chung-Ang University) ;
  • Chang, Eui-Goo (Department of Electrical Engineering, Chung-Ang University)
  • 발행 : 1989.07.21
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초록

Very thin gate oxide(100-300A) MOS capacitor has been fabricated. The effect of series resistance must be calculated and the exact metal-semiconductor work function difference should be obtained to get the fixed oxide charge density exisiting in oxide. Dilute oxidation make sagy to control oxide thickness and reduce fixed oxide charge density. In case of dilute oxidation, fixed oxide charge density depends on oxidation time. If oxide is very thin, the annealing effect is ignored.

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