• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.158-161
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• 2003

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

• Journal of the Korean Society of Food Culture
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• v.34 no.2
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• pp.201-207
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• 2019

This review summarizes the studies on a wide variety of yeast found in kimchi and the effects of yeast on kimchi fermentation, and discusses the direction for further research. Yeast belongs to the genera Trichosporon, Saccharomyces, Sporisorium, Pichia, Lodderomyces, Kluyveromyces, Candida, Debaryomyces, Geotrichum, Kazachstania, Brassica, Yarrowia, Hanseniaspora, Brettanomyces, Citeromyces, Rhodotorula, and Torulopsis have been identified using culture-dependent methods and metagenomics analysis. The application of yeast as a starter into kimchi has resulted in an extension of shelf life and improvement of sensory characteristics due to a decrease in the amount of lactic acid. On the other hand, some yeast cause kimchi spoilage, which typically appears as an off-odor, texture-softening, and white-colony or white-film formation on the surface of kimchi. In contrast to lactic acid bacteria, there are limited reports on yeast isolated from kimchi. In addition, it is unclear how yeast affects the fermentation of kimchi and the mechanism by which white colony forming yeast predominate in the later stage of kimchi fermentation. Therefore, more research will be needed to solve these issues.

• Journal of Adhesion and Interface
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• v.16 no.3
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• pp.95-100
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• 2015

In this work, we observed the effect of silica, zinc oxide, zinc ion coated silica on carboxylic acid modified styrenic thermoplastic elastomer (m-TPS) film for friction-induced surface fracture. m-TPS film added general silica showed poor mechanical properties, anti-abrasion and friction-induced surface fracture, caused by strong filler-filler interaction of silica. In case of m-TPS films added zinc oxide or zinc ion coated silica, mechanical properties, anti-abrasion and friction-induced surface fracture were improved due to forming ionic cluster between carboxylic acid group of m-TPS and zinc ion. Ionic cluster were confirmed by FT-IR analysis that observed zinc carboxylated group stretch peak at $1550{\sim}1650cm^{-1}$.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.167-272
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.14-14
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• 2001

Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.313-322
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• 2004

Thick film photolithography is a new technology in that the lithography process such as exposure and development is applied to the conventional thick film process including screen-printing. In this research, low-temperature cofireable silver paste, which enabled the formation of thick film fine-line using photolithographic technology, was developed. The optimum composition for fine-line forming was studied by adjusting the amounts of silver powder, polymer and monomer, and the additional amount of photoinitiator, and then the effect of processing parameter such as exposing dose on the formation of fine-line was also tested. As the result, it was found that the ratio of polymer to monomer, silver powder loading, and the amount of photoinitiator were the main factors affecting the resolution of fine-line. The developed photosensitive silver paste was printed on low-temperature cofireable green sheet, then dried, exposed, developed in aqueous process, laminated, and fired. Results showed that the thick film fine-line under 20$\mu\textrm{m}$ width could be obtained after cofiring.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.255-260
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• 2020

In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 ㎛. The SERS response characteristics were measured by depositing approximately 1.5 ㎛ of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• Journal of the Korean Society of Safety
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• v.33 no.1
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• pp.41-46
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• 2018

Experiments were carried out the phenomenal observation on effect of corona treated hotmelt laminating film in process of manufacture by 2 kinds of rolling speed and electric power variatons. Surface treatment by corona which is exposure of film surface to electron of ion bombardment, rather than mere exposure to active species, like atomic oxygen or ozone, can enhance adhesion by removing contaminant, electret, roughening surface, and introducing reactive chemical group. Reactive neutrals, ions, electron and photons generated during the corona treatment interact simultaneously with polymers to alter surface chemical composition, wettability, and thus film adhesion. However, it is highly recommended that extensive chains scission is avoided because it can lead to side-effect by forming sticky matter, resulting in dropouts. This paper reviews principles of surface preparation of polypropylene substrate by corona discharging. In addition, the experimental section provides a description of parameter optimization on corona discharging treatment and its side-effect. Experimental results are discussed in terms of surface wetting as determined by contact angle and SEM measurements. When the rolling speed of the film decreased from 1.666 [m / sec] to 0.083 [m / sec], contact angle decreased from $80[^{\circ}]$ to $64[^{\circ}]$, and the wettability was greatly improved. As the supply power increased from 0.4 [kVA] to 2 [kVA] at the corona discharge surface treatment, the contact angle decreased from $77[^{\circ}]$ to $65[^{\circ}]$, and the wettability was greatly improved.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.98-103
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• 2018

Many coating technologies have been developed so far to improve the corrosion resistance, strength, abrasion resistance and other surface properties of materials and equipment. Among them, the formation of CCO (CaCoO, then CCO) thin films has been studied and used in the electronic material field. One of the characteristics of CCO thin films is that it is resistant to high temperature heat. Particularly, the method of forming the CCO thin film is relatively simple, and it was judged that it could be introduced into the existing equipment. Therefore, in this study, an experiment and analysis were carried out to determine whether the coating of CCO thin films can be applied to hot dip galvanizing facilities. A CCO thin film was formed on the surface of STS304 base material and oxidized in a Zn fume atmosphere in a $650^{\circ}C$ furnace with an air atmosphere. Oxidation was carried out for 30 days, after which the shape of the CCO thin film was confirmed by SEM and its corrosivity was analyzed through a potentiodynamic polarization experiment.