• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2003년도 학술대회 논문집
• /
• pp.51-54
• /
• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2003년도 학술대회 논문집
• /
• pp.242-245
• /
• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$3O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.304-305
• /
• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

• 한국광학회지
• /
• 제26권5호
• /
• pp.275-282
• /
• 2015

단축이방성 박막들과 등방성 박막들이 코팅되어 있는 시료에 비스듬히 입사한 빛의 유효반사계수 표현들을 유도하였다. 단축 이방성 박막 내에서의 다중반사 효과를 반영하여 여러 층의 등방성 박막들과 이방성 박막들이 섞여 있는 시료의 유효반사계수 표현들과 타원상수 표현들을 제시함으로써 시료면에 수직한 방향으로 균일하지 않은 단축이방성 분포를 가진 시료의 광학이방성을 여러 개의 단축이방성 박막으로 나누어 분석할 수 있도록 하였다.

• 센서학회지
• /
• 제15권2호
• /
• pp.84-89
• /
• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.171-171
• /
• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• 한국전기전자재료학회논문지
• /
• 제25권7호
• /
• pp.491-495
• /
• 2012

The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.

• 한국표면공학회지
• /
• 제25권3호
• /
• pp.107-116
• /
• 1992

The optimum thickness of Pd-Ni plated layers used as an electrical contact film was investigated by evaluating mechanical, thermal and environmental characteristics. The variations of morphologies and chemical compositions were studied by using SEM, EDS and ESCA. As a result of wear test, the wear resistance behavior of the gold plated layers was not changed with the sliding velocity changes. The palladium-nickel plated layer showed better wear resistance than the gold plated layer at low sliding velocity, but it showed poor wear resistance at high sliding velocity. Under the thermal condition of $400^{\circ}C$ in air, the gold thickness of $2\mu\textrm{m}$ without underplate on phosphorous bronze formed copper oxide on the surface layer by rapid diffusion of copper whereas the gold thickness of $0.8\mu\textrm{m}$ deposited on nickel and palladium-nickel underplate was stable at $400^{\circ}C$. Under the sulfur dioxide environments, the gold thickness of $0.3\mu\textrm{m}$ deposited on the nickel thickness of$ 3\mu\textrm{m}$ and the palladium-nickel thickness of $2\mu\textrm{m}$ underplate was more corrosion-resistant than the gold thickness of $2\mu\textrm{m}$ without underplate on phosphorous bronze. Under the nitric acid vapor environment, corrosion resistance of the gold film was superior to an equivalent thickness of the palladium-nickel film.

• 접착 및 계면
• /
• 제8권1호
• /
• pp.15-27
• /
• 2007

폴리이미드 필름과 구리의 접착력을 향상시키기 위하여 이온빔과 실란-이미다졸 커플링제를 사용하여 폴리이미드 표면개질을 실시하였다. 실란-이미다졸 커플링제는 구리와의 배위결합을 형성하는 이미다졸 그룹과 실록산 폴리머를 형성하는 메톡시 실란 그룹을 함유한다. 폴리이미드 필름표면은 아르곤/산소 이온빔으로 일차로 처리하여 친수성을 높인 폴리이미드 필름에 커플링제 수용액에 침지하여 폴리이미드 필름 표면에 커플링제를 그라프트시켜 표면개질을 실시하였다. XPS 스펙트럼 분석결과 아르곤/산소 플라즈마 처리는 폴리이미드 표면에 하이드록시 및 카르보닐 그룹과 같은 산소 기능성기를 형성함을 알 수 있었고 폴리이미드 필름 표면에 실란-이미다졸과의 커플링반응에 의하여 표면이 개질되었음을 확인하였다. 이온빔을 사용하여 그라프트된 폴리이미드 필름과 구리와의 접착력은 처리되지 않은 폴리이미드 필름과의 접착력 보다 높은 접착력을 나타내었다. 또한 커플링제로 그라프트된 폴리이미드 필름의 접착력 보다 아르곤/산소의 양자화 이온을 이용하여 개질한 그라프트된 폴리이미드 필름의 시편이 더 높은 접착력을 나타내었다. 구리-폴리이미드 필름의 계면으로부터 박리된 층은 분석결과 완전히 서로 다른 화학적 조성을 나타내었는데 이것으로부터 박리가 접합면의 커플링제 내에서 일어나는 것보다는 폴리이미드와 커플링제의 사이에서 일어남을 확인하였다.

• Current Photovoltaic Research
• /
• 제2권3호
• /
• pp.95-102
• /
• 2014

Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.