• Korean Journal of Materials Research
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• v.29 no.3
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• pp.175-182
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• 2019

This study examines paraelectric $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN), which has no hysteresis and high dielectric strength, for energy density capacitor applications. To increase the breakdown dielectric strength of the BZN film further, poly(vinylidene fluoride) BZN-PVDF composite film is fabricated by aerosol deposition. The volume ratio of each composition is calculated using dielectric constant of each composition, and we find that it was 12:88 vol% (BZN:PVDF). To modulate the structure and dielectric properties of the ferroelectric polymer PVDF, the composite film is heat-treated at $200^{\circ}C$ for 5 and 30 minutes following quenching. The amount of ${\alpha}-phase$ in the PVDF increases with an increasing annealing time, which in turn decreases the dielectric constant and dielectric loss. The breakdown dielectric strength of the BZN film increases by mixing PVDF. However, the breakdown field decreases with an increasing annealing time. The BZN-PVDF composite film has the energy density of $4.9J/cm^3$, which is larger than that of the pure BZN film of $3.6J/cm^3$.

• Journal of Sensor Science and Technology
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• v.26 no.1
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• pp.24-27
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• 2017

In this study, I developed a simple and low cost process-printing a silver, carbon, dielectric, adhesive layer on PET films using screen printing technology and bonding the two films face-to-face-to fabricate a low price capacitive pressure-mapping sensor. Both electrodes forming the pressure measuring capacitor are arranged between the two PET films similar to a sandwich. Therefore, the sensor has the advantage of minimizing the influence of external noise. In this study, a $10{\times}10$ capacitance-type pressure-mapping sensor was fabricated and its characteristics were analyzed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.57-57
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• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.155-156
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• 2011

이 논문은 새로운 형태의 EV, PHEV용 탑재형 충전기를 제안한다. 입출력단의 절연을 위한 공진 컨버터와 역률 개선과 충전 전력을 제어하기 위한 벅부스트 컨버터의 2단 구조로 구성하였다. 벅부스트는 전압 스트레스 감소를 위한 2단 병렬 구조와 제어기의 단순화를 위한 DCM 제어로 구현하였다. 또한 파워부에서는 필름 커패시터만으로 구성하였다. 제안한 컨버터의 성능은 실험을 통하여 검증한다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.124-124
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.111-111
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• 2005

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.89-90
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• 1993

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.113-113
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• 2011

알루미늄 박막 커패시터 제작을 위해 선택적인 알루미늄 etching과 anodizing을 이용한 유전체($Al_2O_3$) 형성, 전극층 형성을 위한 무전해 Ni-P 도금을 진행하였다. $5{\mu}m$ patterns/$10{\mu}m$ space를 가지는 dot patterns을 알루미늄 기판에 patterning하고, 이를 각각의 전류밀도 조건에서 etching한 후, barrier type anodizing을 진행하였다. 유전체에 전극층은 무전해 Ni-P 도금을 통해 형성하였으며, 이렇게 제작된 알루미늄 박막 커패시터 특성을 평가하였다.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.463-464
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• 2014

본 논문은 LED 드라이버의 수명을 좌우하는 전해커패시터를 필름커패시터로 대체하기 위하여 출력맥동전류의 구형파 제어 방법을 제안한다. 출력맥동전류의 구형파 운전은 출력전류의 Peak to average ratio를 낮추어 출력커패시터의 용량을 감소시킬 수 있다. 일반적으로 전해커패시터의 1/20배의 용량 저감을 통하여 필름커패시터로 대체가 가능해진다. 본 논문에서 제안한 토폴로지는 bridgeless single-stage AC-DC LED드라이버의 구형파 전류제어에 따른 출력전류리플저감에 대한 내용을 다루었다.