Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 1993.05a
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- Pages.89-90
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- 1993
In-situ Anneal of Silicon Nitride for the NO Capacitor Dielectric Film
- Kang, S.H. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Kim, S.T. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Kim, D.H. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Kim, K.H. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Ahn, S.T. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do)
- Published : 1993.05.01
Abstract
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