• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.369-372
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• 2017

This paper presents a control scheme for three-level NPC inverters using small DC-link capacitors. To reduce the inverter system volume, the film capacitor with small capacitance is a promising candidate for the DC-link. When small capacitors are applied in a three level inverter, however, the AC ripple component increases in the DC-link NPV (neutral point voltage). In addition, the three-phase input grid currents are distorted when the DC-link capacitors are fed by diode rectifier. In this paper, the additional circuit is applied to compensate for small capacitor systems defect, and the offset voltage injection method is presented for the stabilization in NPV. These two proposed processes evidently ensure the quality improvement of the input grid currents and output load currents. The feasibility of the proposed method is verified by experimental results.

• Journal of IKEEE
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• v.23 no.2
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• pp.407-412
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• 2019

Many industrial regions has used and extended the application of LED driver because of many advantage. Specially, due to the simplicity, miniaturization and power density, the flyback converter is selected by a lot of power engineer. Also, the electrolytic capacitor in this converter is used for the constant DC voltage of the converter because of the sufficient capacitance and the economic price. However, because of the characteristics of the electrolytic capacitor and ripple currents on the converter. the expected lifetime of the LED driver is more and more shorted. In this paper, a single-stage CCM PFC flyback converter with the film capacitor is suggested to extended the lifetime of the LED driver. In addition, the proposed converter with the LC filter is decreased the ripple current of the converter output.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.3
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• pp.214-220
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• 2022

This paper proposes a test device designed for developing a high-voltage multilayer ceramic capacitor (MLCC). The proposed topology consists of an energy recovery circuit for charging/discharging capacitor, a flyback converter, and a boost converter for supplying power and a bias voltage application to the energy recovery circuit. The energy recovery circuit designed with a half-bridge converter has auxiliary switches operating before the main switches to prevent excessive current from flowing to the main switches. A prototype has been designed to verify the reliability of target capacitors following the voltage fluctuation with a frequency range below 65 kHz. To conduct high root mean square (RMS) current to the capacitor as a load, the MLCC test was conducted after the topology verification was completed through the film capacitor as a load. Through the agreement between the RMS current formula proposed in this paper and the MLCC test results, the possibility of its use was demonstrated for high-voltage MLCC development in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• ETRI Journal
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• v.20 no.2
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• pp.241-249
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• 1998

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.278-281
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• 1999

PLZT thin films on Pt/Ti/SiO$_2$/Si substrate were fabricated with different Thickness by pulsed laser deposition. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{t}$=985 at 5000$\AA$, and $\varepsilon$$_{t}$=668 at 2000A. P-EI hysteresis loop of 14/50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/70 PLZT thin film was 10$^{-8}$ A/$\textrm{cm}^2$ at 2000$\AA$.EX>.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.108-108
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.128-128
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• 2005