• 제목/요약/키워드: Figure Of Merit

검색결과 440건 처리시간 0.036초

PES 기판에 성장시킨 GZO 박막의 전기적 및 광학적 특성에 미치는 공정압력의 영향 (Effects of Working Pressure on the Electrical and Optical Properties of GZO Thin Films Deposited on PES Substrate)

  • 강성준;정양희
    • 한국정보통신학회논문지
    • /
    • 제19권6호
    • /
    • pp.1393-1398
    • /
    • 2015
  • 본 연구에서는 고주파 마그네트론 스퍼터링 법으로 PES 기판 위에 공정압력을 5 에서 20 mTorr 로 변화시켜 가며 GZO (Ga-doped ZnO) 박막을 제작하여, 전기적 및 광학적 특성을 조사하였다. XRD 측정을 통해 공정압력에 무관하게 모든 GZO 박막이 c 축으로 우선 성장함을 확인할 수 있었고, 5 mTorr 에서 제작한 GZO 박막이 반가폭 0.44° 로 가장우수한 결정성을 나타내었다. AFM 관찰 결과, 표면 거칠기 값은 공정압력 5 mTorr 제작한 박막에서 가장 낮은 값인 0.20 nm 를 나타내었다. 공정압력 5 mTorr 에서 증착한 GZO 박막의 재료평가지수는 6652 로 가장 우수한 값을 나타내었고 이때 비저항과 가시광 영역에서의 평균 투과도는 각각 6.93×10-4Ω·cm 과 81.4 % 이었다. 공정압력이 증가함에 따라 캐리어 농도가 감소하고 이로 인해 에너지 밴드갭이 좁아지는 Burstein-Moss 효과도 관찰할 수 있었다.

동축반전 프로펠러의 제자리 비행 성능연구를 위한 시험장치 개발 (Developed a test rig for studying the hover performance of a coaxial propeller)

  • 송연하;송재림;김덕관
    • 한국추진공학회:학술대회논문집
    • /
    • 한국추진공학회 2017년도 제48회 춘계학술대회논문집
    • /
    • pp.560-562
    • /
    • 2017
  • 본 논문에서는 최근 택배 유인드론의 개발 등 높은 유상하중을 요구하는 임무를 수행하기 위해 드론에 적용되고 있는 동축반전 프로펠러의 제자리 비행성능을 확인하기 위한 시험 장치 개발과 시험 결과를 제시하였다. 프로펠러 직경 대비 상/하 프로펠러 간격에 따른 각 추력과 토크의 변화를 측정하여 성능을 비교하였다. 프로펠러가 회전할 때 발생하는 추력, 토크를 측정하기 위해 로드셀과 토크셀을 이용하였고 회전수를 측정하기 위해서 광센서를 이용하였다. 각 센서의 신호획득을 위해 자료획득시스템(Data Acquisition System)을 이용하고 신호 저장, 모니터링과 BLDC 모터를 제어할 수 있도록 LabVIEW소프트웨어를 활용하였다. 시험은 각 프로펠러가 동일 회전수에서 간격 변화에 따른 성능지수(Figure of Merit)를 측정하였다.

  • PDF

LRCN을 이용한 리튬 이온 배터리의 건강 상태 추정 (State of Health Estimation for Lithium-Ion Batteries Using Long-term Recurrent Convolutional Network)

  • 홍선리;강모세;정학근;백종복;김종훈
    • 전력전자학회논문지
    • /
    • 제26권3호
    • /
    • pp.183-191
    • /
    • 2021
  • A battery management system (BMS) provides some functions for ensuring safety and reliability that includes algorithms estimating battery states. Given the changes caused by various operating conditions, the state-of-health (SOH), which represents a figure of merit of the battery's ability to store and deliver energy, becomes challenging to estimate. Machine learning methods can be applied to perform accurate SOH estimation. In this study, we propose a Long-Term Recurrent Convolutional Network (LRCN) that combines the Convolutional Neural Network (CNN) and Long Short-term Memory (LSTM) to extract aging characteristics and learn temporal mechanisms. The dataset collected by the battery aging experiments of NASA PCoE is used to train models. The input dataset used part of the charging profile. The accuracy of the proposed model is compared with the CNN and LSTM models using the k-fold cross-validation technique. The proposed model achieves a low RMSE of 2.21%, which shows higher accuracy than others in SOH estimation.

진공열처리에 따른 IGZO 박막의 특성 변화 (Effect of Vacuum Annealing on the Properties of IGZO Thin Films)

  • 김소영;김선경;김승홍;전재현;공태경;손동일;최동혁;김대일
    • 열처리공학회지
    • /
    • 제27권4호
    • /
    • pp.175-179
    • /
    • 2014
  • IGZO thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates and then annealed in vacuum for 30 minutes at 100, 200 and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and sheet resistance of as deposited films were 91.9% and $901{\Omega}/{\Box}$, respectively, the films annealed at $300^{\circ}C$ show the optical transmittance of 95.4% and the sheet resistance of $383{\Omega}/{\Box}$. The experimental results indicate that vacuum-annealed IGZO film at $300^{\circ}C$ is an attractive candidate for the transparent thin film transistor (TTFT) in large area electronic applications.

Cascode GaN HEMT를 적용한 위상 천이 dc-dc 컨버터의 구현 및 문제점 분석 (Implementation and Problem Analysis of Phase Shifted dc-dc Full Bridge Converter with GaN HEMT)

  • 주동명;김동식;이병국;김종수
    • 전력전자학회논문지
    • /
    • 제20권6호
    • /
    • pp.558-565
    • /
    • 2015
  • Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

Study on Performance Evaluation of Oscillating Heat Pipe Heat Exchanger for Low Temperature Waste Heat Recovery

  • Bui, Ngoc-Hung;Kim, Ju-Won;Jang, In-Seung;Kang, Jeong-Kil;Kim, Jong-Soo
    • International Journal of Air-Conditioning and Refrigeration
    • /
    • 제11권2호
    • /
    • pp.73-81
    • /
    • 2003
  • The performance of heat exchanger using oscillating heat pipe (OHP) for low temperature waste heat recovery was evaluated. OHP used in this study was made from low finned copper tubes connected by many turns to become the closed loop of serpentine structure. The OHP heat exchanger was formed into shell and tube type. R-22 and R-141b were used as the working fluids of OHP with a fill ratio of 40 vol.%. Water was used as the working fluid of shell side. As the experimental parameters, the inlet temperature difference between heating and cooling water and the mass velocity of water were changed. The mass velocity of water was changed from 30 kg/$m^2$s to 92 kg/$m^2$s. The experimental results showed that the heat recovery rate linearly increased as the mass velocity and the inlet temperature difference of water increased. Finally, the performance of OHP heat exchanger was evaluated by $\varepsilon$-NTU method. It was found that the effectiveness would be 80% if NTU were about 1.5.

10 Gbps Transimpedance Amplifier-Receiver for Optical Interconnects

  • Sangirov, Jamshid;Ukaegbu, Ikechi Augustine;Lee, Tae-Woo;Cho, Mu Hee;Park, Hyo-Hoon
    • Journal of the Optical Society of Korea
    • /
    • 제17권1호
    • /
    • pp.44-49
    • /
    • 2013
  • A transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode (RGC) input stage has been designed and implemented for optical interconnects. The optical TIA-Rx chip is designed in a 0.13 ${\mu}m$ CMOS technology and works up to 10 Gbps data rate. The TIA-Rx chip core occupies an area of 0.051 $mm^2$ with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is 20 pA/${\surd}$Hz with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of 408 $GHz{\Omega}/mW$.

프로펠러 성능 시험 데이터베이스를 활용한 멀티콥터 체공시간 예측방법 개발 (Development of Endurance Estimation Method for Multicopters Using Propeller Database)

  • 최인서;한철희
    • 융복합기술연구소 논문집
    • /
    • 제11권1호
    • /
    • pp.33-37
    • /
    • 2021
  • The application of multicopters using a battery is limited by the short endurance due to the low energy density. A propeller is one of crucial components that determine the performance of the multicopter. In the present study, a systematic method for predicting the endurance of multicopters is described. Propeller performance database are constructed using the data from UIUC Propeller Data Site. Using the 'trendline' function of MS Excel software, the performance of the commercial propellers are represented as a function of polynomials. The multicopter's endurance is computed iteratively using Peukert's Law and considering the voltage drop effect. We evaluated the endurance of multicopters that use commercial propellers. The endurance of the multicopter was within the range of 28 min. to 36 min. It is expected that the present method can be utilized for optimal propeller selection for the given multicopters.

Optimized Phase Noise of LC VCO Using an Asymmetrical Inductance Tank

  • Yoon Jae-Ho;Shrestha Bhanu;Koh Ah-Rah;Kennedy Gary P.;Kim Nam-Young
    • Journal of electromagnetic engineering and science
    • /
    • 제6권1호
    • /
    • pp.30-35
    • /
    • 2006
  • This paper describes fully integrated low phase noise MMIC voltage controlled oscillators(VCOs). The Asymmetrical Inductance Tank VCO(AIT-VCO), which optimize the shortcoming of the previous tank's inductance optimization approach, has lower phase noise performance due to achieving higher equivalent parallel resistance and Q value of the tank. This VCO features an output power signal in the range of - 11.53 dBm and a tuning range of 261 MHz or 15.2 % of its operating frequency. This VCO exhibits a phase noise of - 117.3 dBc/Hz at a frequency offset of 100 kHz from carrier. A phase noise reduction of 15 dB was achieved relative to only one spiral inductor. The AIT-VCO achieved low very low figure of merit of -184.6 dBc/Hz. The die area, including buffers and bond pads, is $0.9{\times}0.9mm^2$.

금속층 두께에 따른 ITO/Ag/ITO 다층 투명 전극의 발열 특성 연구 (A Study on the Exothermic Properties of ITO/Ag/ITO Multilayer Transparent Electrode Depending on Metal Layer Thickness)

  • 민혜진;강예지나;손혜원;신소현;황민호;이현용
    • 한국전기전자재료학회논문지
    • /
    • 제35권1호
    • /
    • pp.37-43
    • /
    • 2022
  • In this study, we investigated the optical, electrical and exothermic characteristics of ITO/Ag/ITO multilayer structures prepared with various Ag thicknesses on quartz and PI substrates. The transparent conducting properties of the ITO/Ag/ITO multilayer films depended on the thickness of the mid-layer metal film. The ITO/Ag (14 nm)/ITO showed the highest Haccke's figure of merit (FOM) of approximately 19.3×10-3 Ω-1. In addition, the exothermic property depended on the substrate. For an applied voltage of 3.7 V, the ITO/Ag (14 nm)/ITO multilayers on quartz and PI substrates were heated up to 110℃ and 200℃, respectively. The bending tests demonstrated a comparable flexibility of the ITO/Ag/IT multilayer to other transparent electrodes, indicating the potential of ITO/Ag/ITO multilayer as a flexible transparent conducting heater.