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http://dx.doi.org/10.6109/jkiice.2015.19.6.1393

Effects of Working Pressure on the Electrical and Optical Properties of GZO Thin Films Deposited on PES Substrate  

Kang, Seong-Jun (Department of Electrical＆Semiconductor Engineering, Chonnam National University)
Joung, Yang-Hee (Department of Electrical＆Semiconductor Engineering, Chonnam National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.19, no.6, 2015 , pp. 1393-1398 More about this Journal
Abstract
In this study, the electrical and optical properties of GZO (Ga-doped ZnO) thin films prepared on PES substrates by RF magnetron sputtering method with various working pressures (5 to 20 mTorr) were investigated. All GZO thin films exhibited c-axis preferential growth regardless of working pressure, the GZO thin film deposited at 5 mTorr showed the most excellent crystallinity having 0.44˚ of FWHM. In AFM observations, surface roughness exhibited the lowest value of 0.20 nm in a thin film produced by the working pressure 5 mTorr. Figure of merits of GZO thin film deposited at 5 mTorr showed the highest value of 6652, in this case resistivity and average transmittance in the visible light region were 6.93×10-4Ω-cm and 81.4%, respectively. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed.
Keywords
GZO thin film; TCO; PES substrate; Figure of merit; Burstein-Moss effect;
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