• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.4
• /
• pp.91-96
• /
• 2021

The enhancement of thermoelectric figure of merit was achieved by the simple processes of sieving and high energy ball milling, respectively, which are enable to reduce the grain size of n-type Bi₂Te₃ thermoelectric materials. By optimizing the grain size, the electrical conductivities and thermal conductivities were controlled. In this study, spark plasma sintering was employed for hindering the grain growth during the sintering process. The thermoelectric figure of merit was measured to be 0.78 in the samples with 30 min high energy ball milling process. Notably, this value was 40 % higher than that of pristine Bi₂Te₃ sample. This result shows the properties of thermoelectric materials can be readily controlled by optimization of grain size via simple ball milling process.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.55-61
• /
• 2011

The n-type $Bi_2(Te_{0.9}Se_{0.1})_3$ powers were fabricated by mechanical alloying, mixed with tungsten(W) powders, and hot-pressed at $550^{\circ}C$ for 30 minutes. Thermoelectric properties of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ were characterized as a function of the volume percent of tungsten-powder addition. The power factor of the hot-pressed $Bi_2(Te_{0.9}Se_{0.1})_3$ was $21.9{\times}10^{-4}$ $W/m-K^2$, and was improved to $30.5{\times}10^{-4}$ $W/m-K^2$ by dispersion of 1 vol% W powders. While the dimensionless figure-of-merit of the $Bi_2(Te_{0.9}Se_{0.1})_3$ hot-pressed without dispersion of W powders was measured as 0.52 at room temperature, it became substantially enhanced to 0.95 with addition of 1 vol% W powders.

• Korean Journal of Materials Research
• /
• v.8 no.11
• /
• pp.1055-1060
• /
• 1998

Thermoelectric properties of ($Pb_{1-x}Sn_x$)Te ($0\leq{x}\leq{0.4}$) alloys, fabricated by mechanical alloying and hot pressing, were investigated with variation of the SnTe content. For the hot-pressed PbTe and ($Pb_{0.9}Sn_{0.1}$)Te. transition from p-type to n-type occurred at $200^{\circ}C$ and $300^{\circ}C$, respectively. However, the specimens containing SnTe more than 0.2mole exhibited p-type conduction up to 450'C. In extrinsic conduction region, the Seebeck coefficient and electrical resistivity of the hot-pressed ($Pb_{1-x}Sn_x$)Te decreased with increasing the SnTe content. The temperature at which the hot-pressed (Pbl-,Sn,)Te exhibited a maximum figure-of-merit was shifted to higher temperature with increasing the SnTe content The hot-pressed (Pbo ,Sno dTe exhibited a maximum figure-of-merit of $0.68\times10_{-3}/K$ at $200^{\circ}C$.

• Journal of radiological science and technology
• /
• v.44 no.2
• /
• pp.101-107
• /
• 2021

The purpose of this study was to evaluate optimal CT scan parameters to minimize patient dose to the irradiation and maintain satisfactory image quality in low-dose chest computed tomography (CT) scans. In a chest anthropomorphic phantom, chest CT scans were performed at different kVp and mA within reference of 3.4mGy in volume CT Dose Index (CTDI_vol). The following quantitative parameters had been statistically evaluated: image noise, signal-to-noise ratio (SNR), contrast-to-noise ratio (CNR), and figure of merit (FOM). Nine radiographers conducted the blind test to select the optimal kVp-mA combination. Results indicated that the kVp-mA combination of 80kVp-90mA, 100kVp-50mA, 120kVp-30mA and 140kVp-30mA were obtained high SNR and CNR. The 120kVp-30mA combination offered good compromise in the FOM, which showed the quality and dose performance. In the blind test, an image of 80kVp-90mA obtained a high score with 4.7 points, and 120kVp-10mA or 140kVp-10mA with a low tube current were observed severe noise and poor image quality, thus resulting in decreased diagnostic accuracy. On the other hand, in the combination of high kVp and high mA(140kVp-90mA), the image quality was improved, but the radiation dose was also increased. the FOM value of 140kVp-90mA was lower than 120kVp-30mA. The application of appropriate scan parameters in low-dose chest CT scans produced satisfactory results in dose and image quality for the accuracy of the clinical diagnosis.

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.356-360
• /
• 2011

Indium oxide ($In_2O_3$) single layer and $In_2O_3$/copper (Cu) bi-layer films were prepared on glass substrates by RF and DC magnetron sputtering without intentional substrate heating. In order to determine the effect of the Cu bottom layer on the optical, electrical and structural properties of $In_2O_3$ films, 3-nm-thick Cu film was deposited on the glass substrate prior to deposition of the $In_2O_3$ films. As-deposited $In_2O_3$ films had an optical transmittance of 79% in the visible wavelength region and a sheet resistance of 2,300 ${\Omega}/{\square}$, while the $In_2O_3$/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. $In_2O_3$/Cu films had a lower sheet resistance of 110 ${\Omega}/{\square}$ and an optical transmittance of 71%. Based on the figure of merit, it can be concluded that the Cu bottom layer effectively increases the performance of $In_2O_3$ films for use as transparent conducting oxides in flexible display applications.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.1
• /
• pp.7-11
• /
• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Journal of Radiation Protection and Research
• /
• v.37 no.3
• /
• pp.149-158
• /
• 2012

In this paper, we measured the variations of radon concentrations in groundwater using low-level Liquid Scintillation Counter (LSC), an instrument for analyzing the alpha and beta radionuclides at its 10 sites around the Kumjung-Gu, north-western of Busan. Optimization of Pulse Shape Analyzer (PSA) to determinate the highest value of figure of merit (FM) was decided using Quantulus 1200 LSC with radium-226 source, the optimal PSA level was shown in the range of 100 to 110. The results show that the Minimum Detectable Activity (MDA) of radon concentrations is 0.61 $Bq{\cdot}L^{-1}$ for 20 minutes in PSA level. We find that the average radon concentration in groundwater is high in granitic rock area and low in volcanic rock area. (Biotite granite : 191.39 $Bq{\cdot}L^{-1}$, Micro graphic granite : 141.88 $Bq{\cdot}L^{-1}$, Adamellite : 92.94 $Bq{\cdot}L^{-1}$, Andesite (volcanic) : 35.35 $Bq{\cdot}L^{-1}$). No significant seasonal variation pattern is observed from the long-term variation analysis from 10 selected sites. We have not seen the significant correlation of radon concentration to groundwater temperature, atmospheric temperature, atmospheric pressure and rainfall. The concentration variation is probably caused by more complex factors and processes.

• Journal of IKEEE
• /
• v.22 no.4
• /
• pp.1012-1018
• /
• 2018

In this paper, CMOS SAR (Successive Approximation Register) A/D converter with 1.8V supply voltage is designed for IoT sensor processing. This paper proposes design of a 12-bit SAR A/D converter with two A / D converters in parallel to improve the sampling rate. A/D converter1 of the two A/D converters determines all the 12-bit bits, and another A/D converter2 uses the upper six bits of the other A/D converters to minimize power consumption and switching energy. Since the second A/D converter2 does not determine the upper 6 bits, the control circuits and SAR Logic are not needed and the area is minimized. In addition, the switching energy increases as the large capacitor capacity and the large voltage change in the C-DAC, and the second A/D converter does not determine the upper 6 bits, thereby reducing the switching energy. It is also possible to reduce the process variation in the C-DAC by proposed structure by the split capacitor capacity in the C-DAC equals the unit capacitor capacity. The proposed SAR A/D converter was designed using 0.18um CMOS process, and the supply voltage of 1.8V, the conversion speed of 10MS/s, and the Effective Number of Bit (ENOB) of 10.2 bits were measured. The area of core block is $600{\times}900um^2$, the total power consumption is $79.58{\mu}W$, and the FOM (Figure of Merit) is 6.716fJ / step.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.12
• /
• pp.84-89
• /
• 2010

In this paper, a novel voltage-controlled oscillator (VCO) using the microstrip square open loop dual split ring resonator is presented for reducing the phase noise. The square-shaped dual split ring resonator having the form of the microstrip square open loop is investigated to reduce the phase noise. Compared with the microstrip square open loop resonator and the microstrip square open loop split ring resonator as well as the conventional microstrip line resonator, the microstrip square dual split ring resonator has the larger coupling coefficient value, which makes a higher Q value, and has reduced the phase noise of VCO. The VCO with 1.7V power supply has the phase noise of -123.2~-122.0 dBc/Hz @ 100 kHz in the tuning range, 11.74~11.75 GHz. The figure of merit (FOM) of this VCO is-214.8~-221.7 dBc/Hz dBc/Hz @ 100 kHz in the same tuning range. Compared with VCO using the conventional microstrip line resonator, VCO using microstrip square open loop resonator, the phase noise of VCO using the proposed resonator has been improved in 26 dB, 10 dB, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.9
• /
• pp.71-80
• /
• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.