• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.9
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• pp.973-978
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• 2014

This study focused on the design of the reflecting layer of a light trapping system fora thin film solar cell using topology optimization based on the phase field method. Therefore, incident light was caused to propagate in the desired direction by reflecting it from this layer, which is the design domain. The same method was applied to the conceptual design of an infrared stealth structure in near infrared range. The results using the phase field method were compared with those using the density method. The design objective was to maximize the Poynting vector value representing the energy flux, which was measured in a measuring domain to control the reflected wave direction. A finite element analysis and optimization process were performed using the commercial package COMSOL combined with the MATLAB programming.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.10
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• pp.465-472
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• 1986

The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.170-172
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• 2002

The epilayer of vertically stacked, self-assembled InAs Quantum Dots (QDs)was grown by MBE with solid sources in non-cracking K-cells, and the sample was fabricated to a FET structure using a conventional technology. The device characteristic and performance were studied. At 77K and room temperature, the threshold voltage shift values are 0.75V and 0.35 V, which are caused by the trapping and detrapping of electrons in the quantum dots. Discharging and charging curves form the part of a hysteresis loop to exhibit memory function. The electrical injection of confined electrons in QDs products the threshold voltage shift and memory function with the persistent electron trapping, which shows the potential use for a room temperature application.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.10
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• pp.845-851
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• 2014

Dielectrophoresis (DEP) is defined as the motion of suspended particles in solvent resulting from polarization forces induced by an inhomogeneous electric field. DEP has been utilized for various biological applications such as trapping, sorting, separation of cells, viruses, nanoparticles. However, the analysis of DEP trapping has mostly employed the period-averaged ponderomotive forces while the dynamic features of DEP trapping have not been attracted because the target object is relatively large. Such approach is not appropriate for the nanoscale analysis in which the size of object is considerably small. In this study, we thoroughly investigate the dynamic response of trapping to various system parameters and its influence on the trapping stability. The effects of particle conductivity on its motion are also focused.

• 전기의세계
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• v.27 no.3
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• pp.31-35
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• 1978

In this paper, in order to clarify the mature of traps in polymer, the thermally stimulated current (TSC) measurements were mad on high density polyethylene by changing the condition of the high-field treatment such as the strength of the field (Fe), the treatment time (te) and the heating rate (.betha.). In addition, the TSC measured from the HDPE was compared with that from LDPE having different crystallinity. The obtained results can suggest that the trapping proceeds during the high-field treatment and the trap associated with the peak P$_{2}$ may have the closed relation to drystallinity and the release of trapped charge is enhanced by the molecular motion.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.44 no.3
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• pp.41-48
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• 2012

Materials used for the inks in the printing industry is an important material following the paper. The composition of the ink is pigment and organic solvents. However, Ink is used in a variety of chemicals, they are classified as non-green. Therefore, rosin-modified phenolics manufactured by the reaction of phenol and formaldehyde can take the place of eco-phenol free resin and by experiment density, gloss, trapping, contrast and dot gain of printing has been studied as printability. The result of study can support that the properties of printing using eco-phenol free resin such as density, gloss, contrast and trapping is similar to existing ink. In the part of dot gain, the result is excellent. So we were thought to be able to improve some characteristics such as dispersion of black ink, that will be possible for the field applicability.

• The Journal of the Acoustical Society of Korea
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• v.39 no.5
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• pp.435-440
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• 2020

Single-beam acoustic tweezers that are capable of manipulating micron-size particles in a non-contact manner have been used in many biological and biomedical applications. Current single-beam acoustic tweezer systems developed for in vitro experiments consist of a function generator and a power amplifier, thus the system is bulky and expensive. This configuration would not be suitable for in vivo and clinical applications. Thus, in this paper, we present a portable single-beam acoustic tweezer system and its performances of trapping and manipulating micron-size objects. The developed system consists of an Field Programmable Gate Array (FPGA) chip and two pulsers, and parameters such as center frequency and pulse duration were controlled by a Personal Computer (PC) via a USB (Universal Serial Bus) interface in real-time. It was shown that the system was capable of generating the transmitting pulse up to 20 MHz, and producing sufficient intensity to trap microparticles and cells. The performance of the system was evaluated by trapping and manipulating 40 ㎛ and 90 ㎛ in diameter polystyrene particles.

• Proceedings of the Korean Society of Applied Entomolohy Conference
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• 2001.05a
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• pp.50-50
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• 2001

• Journal of Korean Society on Water Environment
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• v.31 no.5
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• pp.482-490
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• 2015

In this study, considering the factors that affects sediment trapping efficiency of Vegetative Filter Strips (VFS), the scenarios were designed to develop a regression equation to estimate sediment trapping efficiency of VFS for agricultural fields in South-Korea. For this, general conditions of agricultural fields in South-Korea were investigated. Then, based on these results, total 53,460 scenarios were set and simulated by Vegetative Filter Strip MODel (VFSMOD-w). Two variables were determined from the results of 53,460 scenarios. These two variables were applied to CurveExpert for development of a equation, which can estimate sediment trapping efficiency of VFS. The equation developed in this study can be used in SWAT model for estimation of sediment reduction efficiency of VFS to upland field in Korea. Moreover, it is expected that VFS will be effectively applied to agricultural fields in South-Korea.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.