• Carbon letters
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• 제13권1호
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• pp.17-22
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• 2012

Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1998년도 추계종합학술대회
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• pp.165-168
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• 1998

Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.359-363
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• 1989

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.19-19
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• 2001

• Journal of Magnetics
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• 제20권3호
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• pp.215-220
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• 2015

The PVDF fibrous composite filled with iron oxide nanoparticles were prepared by using the electrospinning technique. The electrospun composite have the thickness in the range of $60-80{\mu}m$ with the average fibrous diameters of 500-900 nm. The magnetizations of PVDF fibrous composite filled with iron oxide nanoparticles showed 4.5 emu/g, 3.1 emu/g and 1.6 emu/g at 1.5 T of external magnetic field for 20 wt.%, 10 wt.% and 5 wt.% iron oxide nanoparticles, respectively. The heat elevation of the magnetic composite were measured under various AC magnetic fields, frequency and the ambient temperatures. The temperature reached up to $46.3^{\circ}C$ from $36^{\circ}C$ at 128 Oe and 355 kHz for 20 wt.% iron oxide nanoparticles filled in PVDF fibrous composite sheet. The specific absorption rate of theses sheets increased from 0.041 W/g to 0.236 W/g with the increment of AC magnetic field from 90 Oe to 167 Oe at 190 kHz, respectively.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.13-13
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• 2002

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.155-158
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• 1988

The fabrication of devices using plans technology could lend to n serious degradation in the breakdown voltage as a result of high electric field at the edges. An elegant approach to reducing the electric field at the edge is by using field limiting ring. The presence of surface charge has n strong influrence on the depletion layer spreading at the surface region because this charge complements the charge due to the ionized acceptors inside the depletion layer. Surface charge of either polarity can lower the breakdown voltage because it affects the distribution of electric field st the edges. In this paper we discuss the influrences of fixed oxide charge on the breakdown voltage of the p+/n junction with field limiting ring(or without field limiting ring).

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.443-444
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• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.844-850
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• 2002

Linearly graded profiles on the field area oxide are frequently used in power integrated circuits to reduce the surface electric field when power devices are operated in forward or reverse blocking modes. It is shown here that tapered windows can be made using the difference of etch rates between the bottom and the top layer of TEOS film. Annealed TEOS films are etched at a lower rate than the TEOS film without annealing Process. The fast etching layer results in window walls having slopes in the range of 25$^{\circ}$∼ 80$^{\circ}$ with respect to the wafer surface. Taper etching technique by annealing the TEOS film applies to high voltage LDMOS, which is compatible with CMOS process, due to the minimum changes in both of design rules and thermal budget.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1440-1442
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• 1996

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased up to the 170 $mJ/cm^2$ with increasing laser energy density and decreased at 220 $mJ/cm^2$. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.