• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.841-843
• /
• 2008

We elucidated a way to increase the mobility of $\pi$-stacked materials by comparing various single-crystal OFETs. A high field-effect mobility (of $3.7\;cm^2/Vs$) was obtained by increasing the effective $\pi$-stacking area and decreasing the $\pi$-stacking distance.

• 한국세라믹학회지
• /
• 제28권11호
• /
• pp.878-884
• /
• 1991

The mobility and diffusivity in an edge dislocation in an FCC crystal formed by the removal of one half of a (100) plane were evaluated in an applied field by analyzing a vacancy tight binding model using Stark's matrix technique. A model of an edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge dislocation in an FCC crystal was constructed for a [100] Burgers vector where vacancy transport along the edge of the extrac half plane of ions was considered. The model considered a tight binding approximation of the vacancy to the compressed region of the core and carried the calculation to the limit of an infinite length of dislocation. The diffusivity and the ratio of mobility to diffusivity were found to increase without bounds in the limit where the correlation factor becomes zero. In contrast, as the correlation factor became unity, the diffusivity became zero and the ratio of mobility to diffusivity became unity associated with the uncorrelated limit of 1/kT. This implied that the phenomenon was not unique to the crystal structure but was unique to edge dislocations with vacancy tight binding.

• Journal of the Korean Physical Society
• /
• 제73권9호
• /
• pp.1329-1333
• /
• 2018

We investigated the mechanism of mobility enhancement after the dehydrogenation process in polycrystalline silicon (poly-Si) thin films. The dehydrogenation process was performed by using an in-situ CVD chamber in a $N_2$ ambient or an ex-situ furnace in air ambient. We observed that the dehydrogenated poly-Si in a $N_2$ ambient had a lower oxygen concentration than the dehydrogenated poly-Si annealed in an air ambient. The in-situ dehydrogenation increased the (111) preferred orientation of poly-Si and reduced the oxygen concentration in poly-Si thin films, leading to a reduction of the trap density near the valence band. This phenomenon gave rise to an increase of the field-effect mobility of the poly-Si thin film transistor.

• Journal of Information Technology Applications and Management
• /
• 제29권6호
• /
• pp.95-122
• /
• 2022

The rapid development of technology, the spread of information, and the implementation of the government's start-up support policy exponentially increase the number of start-up companies. The purpose of this study is to investigate each company's cultural capital's effect on organization performance by promoting knowledge management activities and forming organization habitus based on Cultural Reproduction Theory and Cultural Mobility Theory. As a result of the study, it confirmed that the relationship between cultural capital, knowledge management activities, habitus, and organization performance was significant. The results of this study have academic implications as follows: First, the field of research has expanded by studying the effects of cultural capital on business administration, which is less active than existing education and sociology. Second, it accepts and supports Cultural Reproduction Theory and Cultural Mobility Theory from different perspectives.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2004년도 ICCAS
• /
• pp.1435-1439
• /
• 2004

Most recently, CP(Cellular Phone) has been one of the most important technologies in the IT(Information Tech-nology) field, and it is situated in a position of great importance industrially and economically. To produce the best CP in the world, a new technological concept and its advanced implementation technique is required, due to the extreme level of competition in the world market. The RT(Robot Technology) has been developed as the next generation of a future technology. Current robots require advanced technology, such as soft computing, human-friendly interface, interaction technique, speech recognition, object recognition etc. unlike the industrial robots of the past. Therefore, this paper explains conceptual research for development of the RCP(Robotic Cellular Phone), a new technological concept, in which a synergy effect is generated by the merging of IT & RT. RCP infra consists of $RCP^{Mobility}$ $RCP^{Interaction}$, $RCP^{Integration}$ technologies. For $RCP^{Mobility}$, human-friendly motion automation and personal service with walking and arming ability are developed. $RCP^{Interaction}$ ability is achieved by modeling an emotion-generating engine and $RCP^{Integration}$ that recognizes environmental and self conditions is developed. By joining intelligent algorithms and CP communication network with the three base modules, a RCP system is constructed. Especially, the RCP mobility system is focused in this paper. $RCP^{Mobility}$ is to apply a mobility technology, which is popular robot technology, to CP and combine human-friendly motion and navigation function to CP. It develops a new technological application system of auto-charging and real-world entertainment function etc. This technology can make a CP companion pet robot. It is an automation of human-friendly motions such as opening and closing of CPs, rotation of antenna, manipulation and wheel-walking. It's target is the implementation of wheel and manipulator functions that can give service to humans with human-friendly motion. So, this paper presents the definition, the basic theory and experiment results of the RCP mobility system. We confirm a good performance of the RCP mobility system through the experiment results.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2008년도 제34회 동계학술대회 초록집
• /
• pp.123-123
• /
• 2008

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.368-368
• /
• 2012

We report solution-processed, high-performance single-crystal organic nanowire transistors fabricated from a novel indolocarbazole (IC) derivative. The direct printing process was utilized to generate single-crystal organic nanowire arrays enabling the simultaneous synthesis, alignment and patterning of nanowires using molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. Selected area diffraction (SAED) and X-ray diffraction (XRD) experiments on these solution-processed nanowires showed high crystallinity. Transistors fabricated with these nanowires gave a hole mobility as high as 1.0 cm2V-1s-1 with nanowire arrays with the direct printing process.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.664-666
• /
• 2008

Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at $130^{\circ}C$. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of $0.15\;cm^2/V{\cdot}s$ was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.276-279
• /
• 2008

Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2012년도 춘계학술발표대회
• /
• pp.69.3-69.3
• /
• 2012

A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 and 91 $cm^2/Vs$, respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.