• Journal of Magnetics
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• 제11권1호
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• pp.12-15
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• 2006

Magnetic and electronic properties of reduced rutile titanium dioxide $(TiO_{2-\delta})$ thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting $TiO_{2-\delta}:Mn$ films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near $10^{19}\;cm^{-3}$. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring $Mn^{+3}$ ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권4호
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• pp.312-317
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• 2004

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.

• Journal of Magnetics
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• 제19권1호
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• pp.68-71
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• 2014

Copper doped Zinc Oxide nanofilms were prepared using a simple and low cost wet chemical method. The microstructures, phase structure, Raman shift and optical absorption spectrum as well as magnetization were investigated for the nanofilms. Room temperature ferromagnetism has been observed for the nanofilms. Structural analyses indicated that the films possess wurtzite structure and there are no segregated clusters of impurity phase appreciating. The results show that the ferromagnetism in Copper doped Zinc Oxide nanofilms is driven either by a carrier or defect-mediated mechanism. The present work provides an evidence for the origin of ferromagnetism on Copper doped Zinc Oxide nanofilms.

• Journal of Magnetics
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• 제13권1호
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• pp.19-22
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• 2008

ZnO nanotips, grown on c-$Al_2O_3$ and quartz, were implanted variously with 200 keV Fe or Mn ions to a dose level of $5{\times}10^{16}cm^{-2}$. The magnetic properties of these samples were measured using a superconducting quantum interference device (SQUID) magnetometer. Fe-implanted ZnO nanotips grown on c-$Al_2O_3$ showed a coercive field width of 209 Oe and a remanent field of 12% of the saturation magnetization ($2.3{\times}10^{-5}emu$) at 300K for a sample annealed at $700^{\circ}C$ for 20 minutes. The field-cooled and the zero-field-cooled magnetization measurements also showed evidence of ferromagnetism in this sample with an estimated Curie temperature of around 350 K. The Mn-implanted ZnO nanotips grown on c-$Al_2O_3$ showed superparamagnetism resulting from the dominance of a spin-glass phase. The ZnO nanotips grown on quartz and implanted with Fe or Mn showed signs of ferromagnetism, but neither was consistent.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.143-147
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• 2001

Ferromagnetism in manganese compound semiconductors open prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds. Also it addresses a question about the origin of the magnetic interactions that lead to a Curie temperature(Tc) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally suggested for transition metals in 1950, can explain Tc of $Ga_{1-x}Mn_x$ As and that of its IT-VI counterpart $Zn_{1-x}Mn_x$ Te and is used to predict materials with Tc exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin. In this article, we present not only the experimental result but calculated Curie temperature by RKKY interaction. The problem in making III-V semiconductor has been the low solubility of magnetic elements, such as manganese, in the compound, since the magnetic effects are roughly proportional to the concentration of the magnetic ions. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium MBE{molecular beam epitaxy) growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 K for a small manganese concentration.

• 한국자기학회지
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• 제16권1호
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• pp.45-50
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• 2006

졸-겔(sol-gel)방법으로 제작된 산소 결핍된 anatase 및 rutile구조의 $TiO_{2-\delta}$ 박막에 대하여 철(Fe)도핑에 의하여 생겨나는 전기적, 자기적 특성의 변화를 조사분석 하였다. 진동 시료 자화율(vibrating sample magnetometry; VSM)과 뫼스바우어 분광(conversion electron Mossbauer spectroscopy, CEMS) 측정을 통하여 Fe 도핑된 anatase 및 rutile $TiO_{2-\delta}$ 박막들에서 모두 상온에서 강자성(ferromagnetism)특성이 나타남이 관측되었다. VSM측정 결과 같은 양의 Fe도핑에 대하여 anatase 시료는 rutile 시료보다 더 큰 자기모멘트 값을 나타내었고 CEMS측정으로부터 팔면체 $Ti^{4+}$자리에 치환된 $Fe^{3+}$이온이 시료가 나타내는 강자성 특성에 주로 기여하는 것으로 해석된다. 홀 효과(Hall effect)측정 결과 anatase $TiO_{2-\delta}:Fe$ 박막은 상온에서 p-type특성을 보였으나 관측된 강자성은 he]e carrier 농도와는 무관한 것으로 해석된다. $TiO_{2-\delta}:Fe$ 박막에서 관측된 강자성 특성은 산소결핍자리(oxygen vacancy)에 갇힌 전자를 매개로 하여 이웃한 두 $Fe^{3+}$ 이온들 간에 존재하게 되는 직접적인 강자성 결합(direct ferromagnetic coupling)에 기인한 것으로 해석될 수 있다.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1991년도 제2차 학술발표초록집
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• pp.54-54
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• 1991

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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• pp.102-104
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• 2005

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.19-19
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• 2003

The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.