• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.147-152
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• 2011

ZnO nanorods fabricated on a Zn substrate pre-coated with ZnO as a seed layer by the hydrothermal method were studied mainly as a function of ZnO precursor concentration. Characteristic features by using field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) were investigated to define the changed micro-structure and crystalline phase of the ZnO nanorods according to the experimental conditions. The nanorod morphology strongly depended on the precursor concentration. For example, ZnO nanorods vertically aligned with a hexagonal (002) oriented structure with a diameter of 600~700 nm and length of $6.75{\mu}m$ were clearly observed at the highest concentration of 0.015 M. The strong hexagonal structure was believed to be associated with the highest photoluminescene (PL) intensity and a promising voltage value of ca. 6.069 V at $1000{\mu}A$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.159-164
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• 2009

We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.178-183
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• 2019

A process of fabricating the foamed glass that has closed pores with 8 ~ 580 ㎛ sizes without a blowing agent by sintering 10 ㎛ boron-free glass powder composed of CaO, MgO, SO₃, Al₂O₃-83 wt% SiO₂ at a molding pressure of 0 ~ 120 MPa and a sintering temperature of 750 ~ 1000℃ was investigated. To analyze the glass transition temperature of glass powder, thermogravimetric analysis-differential thermal analysis (TGA-DTA) method were used. The microstructure and pore size of foamed glass were examined using the optical microscopy and field emission scanning electron microscopy (FE-SEM). For the thermal diffusivity and color of the fabricated samples, a heat flow meter and ultraviolet-visible-near-infrared (UV-VIS-NIR)-colormetry were used, respectively. In the TGA-DTA result, the glass transition temperature of glass powder was confirmed to be 626℃. In the microstructure result, closed pores of 7 ~ 20 ㎛ were formed at 750 ~ 900℃, and they were not affected by the molding pressure and sintering temperature. However, at 1,000℃, when there was 0 MPa molding pressure, closed pores of 580 ㎛ were confirmed, and the pore size decreased as the molding pressure increased. Moreover, at a molding pressure of 30 MPa or higher, closed pores of approximately 400 ㎛ were formed. The porosity showed an increasing trend of smaller molding pressure and larger sintering temperature, and it was controllable in the range of 5.69 ~ 68.45%. In the thermal diffusivity result, there was no change according to the molding pressure, and, by increasing the sintering temperature, up to 0.115 W/m·K could be obtained. The Lab color index (CIE-Lab) results all showed a similar translucent white color regardless of molding pressure and sintering temperature. Therefore, based on the foamed glass without boron and blowing agent, it was confirmed that white foamed glass, which has closed pores of 8 ~ 580 ㎛ and a thermal diffusivity characteristic of 0.115 W/m·K, can be fabricated by changing the molding pressure and sintering temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.284-288
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• 2008

Sn-thin film as high capacitive anode for thin film lithium-ion battery was prepared by organic-electrolyte electroplating using Sn(II) acetate. Electrolytic solution including $Li^+$ and $Sn^{2+}$ had 3 reduction peaks at cyclic voltammogram. Current peak at $2.0{\sim}2.5\;V$ region correspond to the electroplating of Sn on Ni substrate. This potential value is lower than 2.91 V vs. $Li^+/Li^{\circ}$, of the standard reduction potential of $Sn^{2+}$ under aqueous media. It is the result of high overpotential caused by high resistive organic electrolytic solution and low $Sn^{2+}$ concentration. Physical and electrochemical properties were evaluated using by XRD, FE-SEM, cyclic voltammogram and galvanostatic charge-discharge test. Crystallinity of electroplated Sn-anode on a Ni substrate could be increased through heat treatment at $150^{\circ}C$ for 2 h. Cyclic voltammogram shows reversible electrochemical reaction of reduction(alloying) and oxidation(de-alloying) at 0.25 V and 0.75 V, respectively. Thickness of Sn-thin film, which was calculated based on electrochemical capacity, was $7.35{\mu}m$. And reversible capacity of this cell was $400{\mu}Ah/cm^2$.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.1-5
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• 2006

We prepared 80 nm-thick TiSix on each 70 nm-thick amorphous silicon and polysilicon substrate using an RF sputtering with $TiSi_2$ target. TiSix composite silicide layers were stabilized by rapid thermal annealing(RTA) of $800^{\circ}C$ for 20 seconds. Line width of $0.5{\mu}m$ patterns were embodied by photolithography and dry etching process, then each additional annealing process at $750^{\circ}C\;and\;850^{\circ}C$ for 3 hours was executed. We investigated the change of sheet resistance with a four-point probe, and cross sectional microstructure with a field emission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM), respectively. We observe an abrupt change of resistivity and voids at the silicide surface due to interdiffusion of silicide and composite titanium silicide in the amorphous substrates with additional $850^{\circ}C$ annealing. Our result implies that the electrical resistance of composite titanium silicide may be tunned by employing appropriate substrates and annealing condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.101-105
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• 2006

We fabricated the nano $TiN_x$ by making of reaction between titanium powder and $Si_3N_4$ during planetary milling. The $TiN_x$ powder was sintered by spark plasma sintering machine after mixing with 50 wt% of titanium powder, and the sintered body was heat-treated at $850^{\circ}C$ in order to investigate its hardness property at the elevated temperature. We analyzed crystal structure by XRD. We observed the peaks of $TiN_{0.26}$ and TiN after 10 hours milling, and we observed TiN peak mainly after 20 hours milling. The reacted particle size distribution was investigated by FE-SEM. Increase of milling time, the size of reacted particles was decreased and the $10{\sim}20nm$ size of $TiN_x$ on the surface of titanium and $TiN_x$ was observed after 20 hours milling. The micro-Vickers hardness of mixed sintered body was about $1050kgf/mm^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.313-318
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• 2017

The microstructure of a cobalt-base superalloy (ECY768) obtained by an investment casting process was studied. This work focuses on the resulting microstructures arising from different melt and mold temperatures in normal industrial environmental conditions. The characterization of the samples was carried out using optical microscopy, field emission scanning electron microscopy and energy-dispersive spectroscopy. In this study, the as-cast microstructure is an ${\alpha}-Co$ (face-centered cubic) dendritic matrix with the presence of a secondary phase, such as $M_{23}C_6-type$ carbides precipitated at grain boundaries. These precipitates are the main strengthening mechanism in this type of alloy. Other minority phases, such as the MC-type phase, was also detected and their presence could be linked to the manufacturing process and environment.

• Composites Research
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• v.26 no.1
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• pp.14-20
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• 2013

The electrospun PVDF containing CNT was made for fabricating materials of the actuator. The electrochemical and their actuating movement were evaluated for the actuator performance in the electrochemical environment. The actuator (which was fabricated by electrospinning) had some advantages, i.e., good dispersion and flexible properties. In the electrospinning process, the final product would have different forms based on different essential factors. In this work, electrospun nanofibers were aligned by using the drum-type collector, and the morphology was identified via the field emission-scanning electron microscope (FE-SEM). The uniform dispersion of CNT in PVDF nanofiber was observed by electron probe X-ray micro-analysis (EPMA) test. The results of tensile strength and electrical resistivity provided the aligned state. The electrospun CNT/PVDF nanofiber sheet on the aligned direction showed better mechanical and electrical properties than the case of the vertically-aligned direction. The efficiency and electrical capacities of electrospun CNT/PVDF nanofiber sheets were compared with the cast PVDF sheet for actuator application. Electrospun CNT/PVDF nanofiber sheet exhibited much better the case of actuator performance than cast neat PVDF actuator, due to the excellent electrical connecting areas.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.