• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1478-1480
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• 2001

ZnO : Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply which can deposit a high quality thin films and control deposition condition in all range of $O_2$ gas ratio using ZnO target containing 8 at% of Al. Sputtering was carried out at a substrate temperature of R T with a DC current of 0.6 A and $O_2$ flow rate of 0 $\sim$ 0.9. The characteristics of ZnO : Al thin films was investigated by $\alpha$-step, four point probe, X-ray diffraction and UV/VIS spectrometer.

• 열처리공학회지
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• 제23권2호
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• pp.69-74
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• 2010

AlN thin films were deposited by using a two-facing-targets type sputtering system (TFTS), and their deposition characteristics, microstructure and texture were investigated. Total gas pressure was kept constant at 0.4 Pa and the partial pressures of nitrogen, $PN_2$ (($N_2$ pressure)/($Ar+N_2$ pressure)) varied from 0 to 0.4 Pa. The texture of the film cross-sections and surface morphology were observed by field emission scanning electron microscope (FE-SEM). The crystallographic orientation of the films were analyzed by X-ray diffraction (XRD). Deposition of AlN film depends on $N_2$ partial pressure. The best preferred oriented AlN thin films can be deposited at a nitrogen partial pressure of $PN_2$ = 0.52. As-deposited AlN films show preferred orientation and columnar structure, and the grAlN size of AlN films increases with increasing sputtering current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.419-422
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• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

• 한국진공학회지
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• 제9권4호
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• pp.367-372
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• 2000

$SiO_2$/Si 기판과 비정질 slide glass 기판 위에 대향타겟식스퍼터법(FTS법)을 이용하여 sputtering current 0.1~0.8 A, 방전 가스압 0.5~3mTorr, 기판온도 R.T~$400^{\circ}C$에서 ZnO 박막을 증착하였다. sputtering current 0.4 A, 가스압력 0.5 mTorr, 기판온도 30$0^{\circ}C$에서 증착된 ZnO/glass 박막과 ZnO/$SiO_2$/Si 박막의 $\Delta\theta_{50}$은 $3.8^{\circ}$와 $2.98^{\circ}$를 각각 나타내었다. 이러한 조건에서 FTS법은 비정질 slide glass 기판 위에서도 우수한 c-축 배향성을 갖는 ZnO 박막을 제작할 수 있다는 것을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.271-275
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• 2006

Al oped zinc oxide (AZO) films were prepared by Facing Targets Sputtering (FTS) system for TCO applications. The electrical, optical and structural properties of AZO thin films have been investigated with input current, oxygen gas flow ratio and substrate temperature. Deposition was carried out at room temperature and $200^{\circ}C$. Working gas pressures were fixed at 1mTorr. As a result, AZO thin film deposited with an optical transmittance over 80 % and a resistivity about $10^{-4}{Omega}{\cdot}cm$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1477-1479
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical, optical characteristics and surface roughness of prepared ITO thin films were measured. In the results, as increasing $O_2$ gas 0.1[sccm] to 0.7[sccm], resistivity of ITO thin film was increased with a decreasing carrier concentration, $O_2$ gas over 0.3[sccm] the carrier mobility have a similarly value. Transmittance of prepared ITO thin films were improved at increasing $O_2$ gas 0.1[sccm] to 0.7[sccm]. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity $6.19{\times}10^{-4}[{\omega}{\cdot}cm]$, carrier mobility $22.9[cm^2/V{\cdot}sec]$, carrier concentration $4.41{\times}10^{20}[cm^{-3}]$ and transmittance over 80% of ITO thin film prepared at working pressure 1mTorr, input current 0.4A without any substrate heating.

• 한국재료학회지
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• 제31권12호
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• pp.697-703
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• 2021

Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10^-2, 6 × 10^-3, and 3 × 10^-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.373-378
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• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.854-856
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD(x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.