대향타겟스퍼터법으로 증착된 ZnO : Al 박막의 전기적 광학적 특성

Electrical and optical properties of ZnO : Al thin films deposited by Facing Targets Sputtering

  • 양진석 (경원대학교 전기전자공학과) ;
  • 성하윤 (경원대학교 전기전자공학과) ;
  • 금민종 (경원대학교 전기전자공학과) ;
  • 박용욱 (남서울대학교 전자정보통신공학부) ;
  • 가출현 (신성대학 전기과) ;
  • 김경환 (경원대학교 전기전자공학과)
  • 발행 : 2001.07.18

초록

ZnO : Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply which can deposit a high quality thin films and control deposition condition in all range of $O_2$ gas ratio using ZnO target containing 8 at% of Al. Sputtering was carried out at a substrate temperature of R T with a DC current of 0.6 A and $O_2$ flow rate of 0 $\sim$ 0.9. The characteristics of ZnO : Al thin films was investigated by $\alpha$-step, four point probe, X-ray diffraction and UV/VIS spectrometer.

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