• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.644-647
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• 1996

The distribution of coercivity in the thickness direction were investigated by using Kerr hysteresis loop tracer for the Co-Cr films deposited by Facing Targets Sputtering apparatus. It was found that the difference between the coercivities of surface layer and initial growth layer H$_c$$\bot$(S)-H$_c$$\bot$(I) correlated strongly with $\Delta$H$_o$, shich represents the degree of distribution of coercivity. Furthermore, the Cr content was varied in order to improve the coercivity of imitial growth layer H$_c$$\bot$(I) and distribution of coercivity. H$_c$$\bot$(I) took a maximum value of 750 Oe and the distribution of coercivity became sharper at the Cr content of 25at. %.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.509-510
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• 2000

Piezoelectric ZnO thin films were deposited on slide glass by Facing Targets Sputtering(FTS). The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The characteristics of zinc oxide thin films on power, working pressure, and substrate temperature were investigated by XRD (x-ray diffractometer), alpha-step (Tencor) and SEM (Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin films with good c-axis orientation.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1320-1322
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• 1997

The distribution of coercivity in the thickness direction were investigated by using Kerr hysteresis loop tracer for the Co-Cr films deposited by Facing Targets Sputtering apparatus. It $H_{c{\bot}}(S)- H_{c{\bot}}(I)$ correlated strongly with ${\Delta}H_c$, which represents the degree of distribution of coercivity. Furthermore, the Cr content was varied in order to improve the coercivity of intial growth layer $H_{c{\bot}}(I)$ took a maximum value of 750 Oe and the distribution of coercivity became sharper at the Cr content of 25 at.%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.578-581
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• 1999

The Co-Cr-Ta films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrates. In this study, we investigated the effect underlayers on the growths layers of Co-Cr-Ta recording layers. The Co-Cr-Ta/Ti(CoCr) double layers were deposited with sputter gas pressure$(P_N, 0.3-1mTorr)$ by using FTS apparatus at temperature of$40^{\circ}C~-300^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry(XRD) and vibrating sample magnetometer(VSM), respectively.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.30-34
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• 2016

We investigated magnetic field, discharged voltage, and as-deposited film uniformity at facing targets sputtering (FTS) system with magnetic field type: i) concentrated and ii) distributed magnetic field type. And Al doped ZnO (AZO) films were prepared at two magnetic field type such as concentrated magnetic field type and distributed magnetic field type, respectively. Discharge voltage at the distribution type is lower than concentration type due to low magnetic flux (middle magnetic flux: Concentration 1200 G and Distribution 600 G). The films deposited at the distributed magnetic field were more uniform than concentration type. All of prepared AZO films had a resistivity of under $10^{-4}[{\Omega}{\cdot}cm]$ and a transmittance of more than 85 % in the visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.444-450
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• 2000

We prepared Co-Cr thin film for perpendicular magnetic recording media with facing targets sputtering system(FTS system) which can deposit a high quality thin film in plasma-free state and wide range of working pressure. The effect of sputtering conditions(argon gas pressure and substrate temperature) on the magnetic and the crystallographic characteristic of Co-Cr thin film was investigated. And the variation of perpendicular coercivity with the variation of film thickness was studied. As a result we obtained the high perpendicular coercivity of 1900Oe and the good dispersion angle of c-axis($\Delta$$\theta$$_{50}$) of 5$^{\circ}$on the film thickness of 100nm for the promising recording layer of perpendicular magnetic recording media.c recording media.a.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.492-495
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• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

• Journal of Surface Science and Engineering
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• v.31 no.4
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• pp.217-222
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• 1998

The Facing Targets Sputtering(FTS) system has several advantages for preparing films over a wide range of working gas pressure on plasma-free substrates. Co-Cr thin films seem to be one of the most promising media for perpendicular magnetic recording system. In this study, the capabillities of the system fordepositing C0-Cr films have been investigated. Under various Ar gas pressure, films with morphologically dense microstructure and good c-axis orientation were deposited, even when the incident angle $\psi_x$ of sputtered part icles to the film plane was below abount $50^{\circ}C$. this may imply that the shadowing effect by obique incidence of particle can be compensated by rapid surface diffusion owing to the high kinetic energy of particles arriving at the growing film. It has been confirmed that the FTS system is very useful for perparing Co-Cr thin films recorging media.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.438-439
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• 2007

In this study, we prepared ITO thin film on the polycarbonate(PC) substrate by using Facing Targets sputtering (FTS) system. After the external bending force was applied to as-deposited ITO thin films with fixed face-plate distance (L), we investigated how properties of those change. As a result, the crack density of films was increasing as bending frequency increased. In accordance with crack distribution, we observed that the resistivity value of ITO thin film increased.