• 한국기계가공학회지
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• 제12권5호
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• pp.122-128
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• 2013

This paper describes the on-machine surface form evaluation of an ultra-precision cylinder for the fabrication by the compensation process. In this study, the surface form error of an ultra-precision cylinder, which was fabricated by the ultra-precision diamond turning machine with a single diamond cutting tool, was evaluated by using two capacitance-type displacement probes. Based on the measurement results, the compensation process was conducted. Since the measurement was carried out on the machine without re-mounting of the workpiece, additional fabrication for compensation process can be conducted precisely.

• 대한전자공학회논문지SD
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• 제44권12호
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• pp.102-107
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• 2007

본 논문에서는 메모리 공정이 필요 없고 내장 프로세서를 사용하지 않는 H.264/AVC 엔트로피 복호기를 제안한다. 기존에 발표된 H.264/AVC 엔트로피 복호기의 경우 상당수의 연구가 내부의 ROM 또는 RAM이 필요하기 때문에 일반적인 디지털 로직 공정에서 구현이 어렵다. 또한 상당수의 연구가 비트열 처리를 위하여 내장 프로세서를 사용하기 때문에 면적이 크고 전력소모가 많은 단점을 가지고 있다. 본 논문에서는 내장 프로세서를 사용하지 않는 H.264/AVC Hardwired 엔트로피 복호기를 제안함으로써 데이터 처리 속도를 증가시키고 전력 소모를 줄인다. 또한 CAVLC 복호기에서 복호 시에 이용되는 룩업 테이블 및 저장 공간을 최적화하고 내장 메모리를 사용하지 않는 구조를 제안함으로써, 기존 연구에 비해 하드웨어 크기를 줄이고 ROM 또는 RAM이 지원되지 않는 디지털 로직 제조 공정에서도 쉽게 구현이 가능하다. 설계된 엔트로피 복호기는 H.264/AVC 비디오 복호기의 일부로 내장되어 전체 시스템에서 동작하는 것을 검증하였다. TSMC 90nm 공정으로 합성한 결과 최대동작주파수는 125MHz이며, QCIF, CIF, QVGA 영상을 지원할 뿐만 아니라 nC 레지스터 등 약간의 수정을 통해서 VGA 영상도 지원이 가능하다.

• 한국정밀공학회지
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• 제25권1호
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• pp.122-129
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• 2008

Two-photon stereolithography is recognized as a promising process for the fabrication of three-dimensional (3D) microstructures with 100 nm resolution. Generally, beam-scanning system has been used in the conventional process of two-photon stereolithography, which is limited to the fabrication of micro-prototypes in small area of several tens micrometers. For the applications to 3D high-functional micro-devices, the fabrication area of the process is required to be enlarged. In this paper, large-area two-photon stereolithography (L-TPS) employing stage scanning system has been developed. Continuous scanning method is suggested to improve the fabrication speed and parameter study is conducted. An objective lens of high numerical aperture (N.A.) and high strength material were employed in this system. Through this work, 3D microstructures of $600*600*100\;{\mu}m$ were fabricated.

• 대한기계학회논문집A
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• 제29권2호
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• pp.228-231
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• 2005

In this paper, we present reusable quartz master fabricated by electron-beam lithography and dry etching process of quartz, and results of injection molding based on the reusable quartz master for the manufacturing of nano-scale information media. Since patterned structures of photoresist can be easily damaged by separation (demolding) process of nickel stamper and master, a master with photoresist cannot be reused in stamper fabrication process. In this work, we have made it possible of the repeated use of master by directly patterning on quart in nickel stamper fabrication process. We have designed and fabricated four different specimens including 100nm, 140nm 200nm and 400nm pit patterns. In addition, both intaglio and embossed carving patterns are fabricated for each specimen. In the preliminary test of injection molding, we have fabricated polycarbonate patterns with varying mold temperature. We have experimentally verified the fabrication process of the reusable quart master and possibility of quartz master as direct stamper.

• 대한조선학회논문집
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• 제44권5호
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• pp.517-525
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• 2007

This paper presents how to approximate an optimal shape of roll bending process in the fabrication of a curved shell plate. The roll bending process usually makes the cylindrical or conic shape from an initial flat plate. It means that the final shape is developable or its surface representation has zero Gaussian curvature. The fabrication shape is important in order to find process parameters of roil bending. An optimal concept is used to determine the developable fabrication shape which is in the closest proximity to the design surface or the given shell plate and is subject to developability. The results and the efficiency of this algorithm are evaluated by applying to some shell plates. Furthermore, the fabrication shape will be fundamental information for other process parameters of roll bending such as the vertical displacement of the center roller and the rolling directions.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• Journal of Electrical Engineering and Technology
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• 제9권3호
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

• 한국기계가공학회지
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• 제17권2호
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• pp.83-88
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• 2018

Additive manufacturing (AM) technologies have attracted wide attention as key technologies for the next industrial revolution. Among AM technologies using various materials, powder bed fusion (PBF) processes and direct energy deposition (DED) are representative of the metal 3-D printing process. Both of these processes have a common feature that the laser is used as a heat source to fabricate the 3-D shape through melting of the metal powder and solidification. However, the material properties of the deposited metals differ when produced by different process conditions and methods. 17-4 precipitation-hardening stainless steel (17-4PH SS) is widely used in the field of aircraft, chemical, and nuclear industries because of its good mechanical properties and excellent corrosion resistance. In this study, we investigated the differences in microstructure and mechanical properties of deposited 17-4PH SS by PBF and DED processes, including the heat treatment effect.

• 한국시뮬레이션학회논문지
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• 제8권3호
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• pp.49-66
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• 1999

Semiconductor wafer fabrication is known to be one of the most complex manufacturing processes due to process intricacy, random yields, product diversity, and rapid changing technologies. In this study we are concerned with the impact of lot release and dispatching policies on the performance of semiconductor wafer fabrication facilities. We consider several semiconductor wafer fabrication environments according to the machine failure types such as no failure, normal MTBF, bottleneck with low MTBF, high randomness, and high MTBF cases. Lot release rules to be considered are Deterministic, Poisson process, WR(Workload Regulation), SA(Starvation Avoidance), and Multi-SA. These rules are combined with several dispatching rules such as FIFO (First In First Out), SRPT (Shortest Remaining Processing Time), and NING/M(smallest Number In Next Queue per Machine). We applied the combined policies to each of semiconductor wafer fabrication environments. These policies are assessed in terms of throughput and flow time. Basically Weins fabrication setup was used to make the simulation models. The simulation parameters were obtained through the preliminary simulation experiments. The key results throughout the simulation experiments is that Multi-SA and SA are the most robust rules, which give mostly good performance for any wafer fabrication environments when used with any dispatching rules. The more important result is that for each of wafer fabrication environments there exist the best and worst choices of lot release and dispatching policies. For example, the Poisson release rule results in the least throughput and largest flow time without regard to failure types and dispatching rules.

• International Journal of Precision Engineering and Manufacturing
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• 제4권5호
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• pp.22-26
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• 2003

In this work, a new non-photolithographic micro-fabrication technique is presented. The motivation of this work is to overcome the demerits of the most commonly used photolithographic techniques. The micro-fabrication technique presented in this work is a two-step process which consists of mechanical scribing followed by chemical etching. This method has many advantages over other micro-fabrication techniques since it is simple, cost-effective, rapid, and flexible. Also, the technique can be used to obtain a metal structure which has sub-micrometer width patterns. In this paper, the concept of this method and its application to microsystem technology are described.