• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.182-187
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• 2005

A large area micro mirror is an optical element that functions as changing an optical path by reflection in integrated optical system. We fabricated the large area silicon mirror by anisotropic etching using MEMS for implementation of integrated optical pickup. In this work, we report the optimum conditions to better fabricate and design, greatly improve mirror surface quality. To obtain mirror surface of $45^{\circ},\;9.74^{\circ}$ off-axis silicon wafer from (100) plane was used in etching condition of $80^{\circ}C$ with 40wt.% KOH solution. After wet etching, polishing process by MR fluid was applied to mirror surface for reduction of roughness. In the next step, after polymer coating on the polished Si wafer, the Si mirror was fabricated by UV curing using a trapezoid bar-type way structure. Finally, we obtained peak to valley roughness about 50 nm in large area of $mm^2$ and it is applicable to optical pickup using blu-ray wavelength as well as infrared wavelength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.77-81
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• 2006

We report the performance of a four-element, 11.67 GHz, high-Tc superconducting (HTS) microstrip antenna array with corporate feed network and circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from $YBa_2Cu_3O_{7-x}$ (YBCO) superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at room temperature and at cryogenic temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.30-35
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• 2020

A microlens has been fabricated by various methods such as a thermal reflow, hot embossing, diamond milling, etc. However, these methods require a relatively complex process to control the microlens shape. In this work, we report on a simple and cost-effective method to fabricate a cylindrical microlens (CML), which can diffuse light widely. We have employed a slot-die head with the dual plate (a meniscus guide with a protruded μ-tip and a shim with a slit channel) for coating of a narrow stripe using poly(methyl methacrylate) (PMMA). We have shown that the higher the coating gap, the lower the maximum coating speed, which causes an increase in the stripe width and thickness. The coated PMMA stripe has the concave shape. To make it in the shape of a convex microlens, we have applied the thermal reflow method. When the stripe thickness is small, however, its effect is negligible. To increase the stripe thickness, we have increased the number of repeated coating. With this scheme, we have fabricated the CML with the width of 223 ㎛ and the thickness of 7.3 ㎛. Finally, we have demonstrated experimentally that the CML can diffuse light widely, a feature demanded for light extraction efficiency of organic light-emitting diodes (OLEDs) and suppression of moiré patterns in displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.776-781
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• 2004

We report the performance of a four-element, 11.67 GHz, $high-{T}_c$ superconducting (HTS) microstrip antenna array with corporate feed network. The HTS antenna array used in this work had a circular polarization for direct broadcasting satellite (DBS) system. Our array antennas were designed and built on a 0.5 mm thick MgO substrate. To compare the superconducting antennas with normal conducting counterpart, One antenna pattern was fabricated from gold thin film, and a second pattern was fabricated from ${YBa}_2{Cu}_3{O}_7-x(YBCO)$ superconducting thin film. To improve the axial ratio of circularly polarized arrays, sequential rotation technique were used. Efficiency, radiation pattern, return loss and bandwidth were measured for both antennas at cryogenic temperature and room temperature. The array produced good circular polarization, and the gain of the array at 77 K, relative to a copper array at room temperature was approximately 1.54 dB. The measured return loss of our HTS antenna array was 35.79 dB at the resonant frequency of 11.67 GHz and The total effective bandwidth was about 3.4 %. The results showed that high-temperature superconductors, when used in microstrip arrays, improved the efficiency of the HTS antenna array for circularly polarization.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.1
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• pp.76-79
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• 2014

We report Zinc oxide (ZnO) nanorods synthesis and electrochemical luminescence (ECL) cell fabrication. The ECL cell was fabricated using the electrode of ZnO nanorods and Ru(II) complex ($Ru(bpy)_3{^{2+}}$) as a luminescence materials. The fabricated ECL cell is composed of F-doped $SnO_2$ (FTO) glass/ Ru(II)/ZnO nanorods/FTO glass. The highest intensity of the emitting light was obtained at the wavelength of ~620 nm which corresponds to dark-orange color. At a bias voltage of 3V, the measured ECL efficiencies were 5 $cd/m^2$ for cell without ZnO nanorod, 145 $cd/m^2$ for ZnO nanorods-$5{\mu}m$, 208 $cd/m^2$ for ZnO nanorods-$8{\mu}m$ and 275 $cd/m^2$ for ZnO nanorods-$10{\mu}m$, respectively. At a bias voltage of 3.5V, the use of ZnO nanorods increases ECL intensities by about 3 times compared to the typical ECL cell without the use of ZnO nanorods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.491-492
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• 2006

We report on the fabrication of organic-based flexible display using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a Ar/$O_2$ ambient. X-ray diffraction examination results show that the IZO anode film grown at room temperature is complete amorphous structure due to low substrate temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.