• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.418-422
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• 1998

The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1230-1233
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• 2004

The ITO thin films were prepared by the FTS(Facing Targets Sputtering) system. The ITO thin films are deposited by changing the input current and working gas pressure. Then, electric characteristics, transmittance and surface roughness of ITO thin films were measured by Hall effect measurement, UV-VIS spectrometer and AFM. As a result, the ITO thin film was fabricated with resistivity 6xl0$^{-4}$ Ωㆍcm, carrier mobility 52.11 $\textrm{cm}^2$/Vㆍsec, carrier concentration 1.72 x $10^{20}$ $cm^{-3}$ transmittance over 85 % of ITO film at working gas pressure 1 mTorr and input current 0.6 A.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• 한국통신학회논문지
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• 제31권2C호
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• pp.175-183
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• 2006

본 논문에서는 주파수대역 직접확산방식 (DS-SS)의 비행종단시스템을 제안하였고 FPGA를 이용하여 구현된 결과를 보여준다. DS-SS방식의 비행종단시스템은 간섭신호와jamming에 강한 특성이 있을 뿐만 아니라 확산코드를 사용함으로써 인증과 암호화의 효과를 얻을 수 있다. 또한 기존의 아날로그 FM방식의 종단시스템에 비하여 전력을 크게 줄일 수 있다. 오류정정을 위하여 리드-솔로몬(32, 28)코드를 적용하였고 데이터를 암호화하기 위하여 3중 Data Encryption Standard (3DES)암호화를 하였다. 그리고 counter알고리즘을 적용하여 외부 장치의 간섭으로부터 비행체를 보호할 수 있도록 하였다. I채널과 Q채널의 확산코드는 GOLD코드생성기를 이용하여 생성하였다. 시스템은 ALTERA EPXA1F484C3 디바이스로 지상시스템을 구현하였고, FLEX계열인 EPF10K100ARC240 디바이스를 사용하여 비행종단 탑재시스템을 구현하였다.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Journal of the Korean Wood Science and Technology
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• 제52권2호
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• pp.118-133
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• 2024

The sapwood portion of fast-growing teak is mostly ignored due to its inferior quality. One of the possibilities for utilizing sapwood waste is to convert it into activated carbon that has good adsorption capabilities. The raw materials used in this research were sapwood of 14-year-old fast-growing teak sapwood (FTS) waste, which was taken from three trees from community forests in Wonosari, Gunungkidul, Yogyakarta Special Region. FTS waste was taken from the bottom of the tree up to a height of 1.3 m. The activation process is conducted with an activation temperature of 750℃, 850℃, and 950℃. The heating duration consists of three variations: 30 min, 60 min, and 90 min. The quality evaluation parameters of activated carbon include yield, moisture content, volatile matter content, ash content, fixed carbon content, adsorption capacity of benzene, adsorption capacity of methylene blue, and adsorption capacity of iodine. The results showed that the activated carbon produced had the following quality parameters: yield of 75.61%; moisture content of 1.27%; volatile matter content of 9.98%; ash content of 5.43%; fixed carbon content of 84.58%; benzene absorption capacity of 8.58%; methylene blue absorption capacity of 87.73 mg/g; and iodine adsorption capacity of 948.19 mg/g. It can be concluded that activated carbon from FTS waste has good iodine adsorption, which fulfilled the SNI 06-3730-1995 quality standard. Due to the iodine adsorption ability of FTS waste activated carbon, the conversion of FTS waste to activated carbon is categorized as a potential method to increase the value of this material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.137-137
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.880-883
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• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.252-252
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• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.172-175
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• 2003

ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..