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http://dx.doi.org/10.4313/JKEM.2004.17.11.1230

Preparation of ITO Thin Films by FTS{Facing Targets Sputtering) Method  

Kim, Geon-Hi (경원대학교 전기정보공학과)
Keum, Min-Jong (경원대학교 전기정보공학과)
Kim, Han-Ki (삼성 SDI)
Son, In-Hwan (신성대학 디지털전기계열)
Jang, Kyung-Wook (경원전문대 자동차과)
Lee, Won-Jae (경원전문대 전자정보과)
Choi, Hyung-Wook (경원대학교 전기정보공학과)
Park, Yong-Seo (경원대학교 전기정보공학과)
Kim, Kyung-Hwan (경원대학교 전기정보공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.11, 2004 , pp. 1230-1233 More about this Journal
Abstract
The ITO thin films were prepared by the FTS(Facing Targets Sputtering) system. The ITO thin films are deposited by changing the input current and working gas pressure. Then, electric characteristics, transmittance and surface roughness of ITO thin films were measured by Hall effect measurement, UV-VIS spectrometer and AFM. As a result, the ITO thin film was fabricated with resistivity 6xl0$^{-4}$ Ωㆍcm, carrier mobility 52.11 $\textrm{cm}^2$/Vㆍsec, carrier concentration 1.72 x $10^{20}$ $cm^{-3}$ transmittance over 85 % of ITO film at working gas pressure 1 mTorr and input current 0.6 A.
Keywords
ITO; FTS; Electric characteristics; Transmittance; Surface roughness;
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