• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.183-188
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• 2015

A 10-bit 10MS/s low power consumption successive approximation register (SAR) analog-to-digital converter (ADC) using a straightforward capacitive digital-to-analog converter (DAC) is presented in this paper. In the proposed capacitive DAC, switching is always straightforward, and its value is half of the peak-to-peak voltage in each step. Also the most significant bit (MSB) is decided without any switching power consumption. The application of the straightforward switching causes lower power consumption in the structure. The input is sampled at the bottom plate of the capacitor digital-to-analog converter (CDAC) as it provides better linearity and a higher effective number of bits. The comparator applies adaptive power control, which reduces the overall power consumption. The differential prototype SAR ADC was implemented with $0.18{\mu}m$ complementary metal-oxide semiconductor (CMOS) technology and achieves an effective number of bits (ENOB) of 9.49 at a sampling frequency of 10MS/s. The structure consumes 0.522mW from a 1.8V supply. Signal to noise-plus-distortion ratio (SNDR) and spurious free dynamic range (SFDR) are 59.5 dB and 67.1 dB and the figure of merit (FOM) is 95 fJ/conversion-step.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Bulletin of the Korean Chemical Society
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• v.30 no.9
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• pp.2061-2065
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• 2009

Two simple algorithm modifications are made to the THRASH data retrieval program with the aim of improving analysis speed for complex Fourier transform ion cyclotron resonance (FTICR) mass spectra. Instead of calculating the least-squares fit for every charge state in the backup charge state determination algorithm, only some charge states are pre-selected based on the plausibility values obtained from the FT/Patterson analysis. Second, a modification is made to skip figure-of-merit (FOM) calculations in the central m/z region between two neighboring peaks in isotopic cluster distributions, in which signal intensities are negligible. These combined modifications result in a significant improvement in the analysis speed, which reduces analysis time as much as 50% for ubiquitin (8.6 kDa, 76 amino acids) FTICR MS and MS/MS spectra at the reliability (RL) value = 0.90 and five pre-selected charge states with minimal decreases in data analysis quality (Table 3).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.288-291
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• 2002

An alkoxide-based sol-gel method was used to fabricate $(Pb_{x},Sr_{1-x})$TiO3 (PST) thin films on a Pt/Ti/SiO2/Si substrate, and the dielectric properties of the PST thin films were investigated as a function of the Pb/Sr composition for use in tunable microwave device applications. The dielectric properties of the PST films were strongly dependent on the Pb/Sr ratio. The dielectric constant and dielectric loss of the PST films increased with increasing Pb content, and the figure of merit (FOM) reached a maximum value of 27.5 at a Pb/Sr ratio of 4:6. The tunability increased with increasing Pb content. The dielectric constant, loss factor, and tunability of PST (50/50) thin films were 404, 0.023, and 51.73%, respectively. From the result, the PST films with good dielectric properties are useful candidates for tunable microwave device.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.47 no.3
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• pp.302-312
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• 2014

This article describes the design and performance characteristics of a broadband ultrasonic mosaic transducer. We focus on the improved bandwidth in the high frequency band of a previously designed broadband ultrasonic transducer (Lee et al., 2014). The improvement in the pulse-echo bandwidth was achieved by employing twelve $2{\times}2$ element subarrays, operating at different resonance frequencies, and utilizing the mosaic array concept. We found that the -6 dB and -12 dB bandwidths of the newly developed broadband ultrasonic mosaic transducer, were up to 155% and 170% of the previously designed model, with a quality factor of 1.71 and 1.25, respectively. The averaged TVR (transmitting voltage response), SRT (receiving sensitivity), and FOM (figure of merit) values in a nearly flat transmitting response band, from 45 to 105 kHz providing a -12 dB bandwith of 60 kHz, were 163.3 dB (re $1{\mu}Pa/V$ at 1 m), -192.8 dB (re $1V/{\mu}Pa$), and -30.9 dB, respectively.

• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.3925-3934
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• 2023

The importance of fast neutron detection for nuclear safeguards purposes has increased due to its potential advantages such as reasonable cost and higher precision for larger sample masses of nuclear materials. Pulse-shape discrimination (PSD) is inevitably used to discriminate neutron- and gamma-ray- induced signals from organic scintillators of very high gamma sensitivity. The light output (LO) threshold corresponding to several MeV of recoiled proton energy could be necessary to achieve fine PSD performance. However, this leads to neutron count losses and possible distortion of results obtained by neutron multiplicity counting (NMC)-based nuclear material accountancy (NMA). Moreover, conventional PSD techniques are not effective for counting of neutrons in a high-gamma-ray environment, even under a sufficiently high LO threshold. In the present work, PSD performance (figure-of-merit, FOM) according to LO bands was confirmed using a conventional charge comparison method (CCM) and compared with results obtained by convolution neural network (CNN)-based PSD algorithms. Also, it was attempted, for the first time ever, to reject fake neutron signals from distorted PSD regions where neutron-induced signals are normally detected. The overall results indicated that higher neutron detection efficiency with better accuracy could be achieved via CNN-based PSD algorithms.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.169-181
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• 2011

In this present paper, a comprehensive drain current model incorporating the effects of channel length modulation has been presented for multi-layered gate material engineered trapezoidal recessed channel (MLGME-TRC) MOSFET and the expression for linearity performance metrics, i.e. higher order transconductance coefficients: $g_{m1}$, $g_{m2}$, $g_{m3}$, and figure-of-merit (FOM) metrics; $V_{IP2}$, $V_{IP3}$, IIP3 and 1-dB compression point, has been obtained. It is shown that, the incorporation of multi-layered architecture on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET leads to improved linearity performance in comparison to its conventional counterparts trapezoidal recessed channel (TRC) and rectangular recessed channel (RRC) MOSFETs, proving its efficiency for low-noise applications and future ULSI production. The impact of various structural parameters such as variation of work function, substrate doping and source/drain junction depth ($X_j$) or negative junction depth (NJD) have been examined for GME-TRC MOSFET and compared its effectiveness with MLGME-TRC MOSFET. The results obtained from proposed model are verified with simulated and experimental results. A good agreement between the results is obtained, thus validating the model.

• International journal of advanced smart convergence
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• v.9 no.1
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• pp.172-176
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• 2020

The implementation of a low phase noise voltage controlled oscillator (VCO) is important for the signal integrity of wireless communication terminal. A low phase noise wideband VCO for a wireless local area network (WLAN) application is presented in this paper. A 6-bit coarse tune capacitor bank (capbank) and a fine tune varactor are used in the VCO to cover the target band. The simulated oscillation frequency tuning range is from 8.6 to 11.6 GHz. The proposed VCO is desgned using 65 nm CMOS technology with a high quality (Q) factor bondwire inductor. The VCO is biased with 1.8 V VDD and shows 9.7 mA current consumption. The VCO exhibits a phase noise of -122.77 and -111.14 dBc/Hz at 1 MHz offset from 8.6 and 11.6 GHz carrier frequency, respectively. The calculated figure of merit(FOM) is -189 dBC/Hz at 1 MHz offset from 8.6 GHz carrier. The simulated results show that the proposed VCO performance satisfies the required specification of WLAN standard.