• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1614-1618
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• 2007

We have demonstrated the experimental results to obtain the immunity of FN (Fowler Nordheim) stress for S-RCAT (Spherical-Recess Cell Array Transistor) which has been employed to meet the requirements of data retention time and propagation delay time for sub-100-nm mobile DRAM (Dynamic Random Access Memory). Despite of the same S-RCAT structure, the immunity of FN stress of S-RCAT depends on the process condition of gate oxidation. The S-RCAT using DPN (decoupled plasma nitridation) process showed the different degradation of device properties after FN stress. This paper gives the mechanism of FN-stress degradation of S-RCAT and introduces the improved process to suppress the FN-stress degradation of mobile DRAM.

• Journal of Aquaculture
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• v.19 no.3
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• pp.149-156
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• 2006

Stress responses, osmoregulation and growth of black porgy reared in freshwater or seawater were investigated by supplying the feed (10 mg/kg feed) treated with the $T_3$ (3,5,3'-triiodo-L-thyronine) for 90 days. Plasma $T_3$ in black porgy reared for 60 days in freshwater with (FT) or without (FN) $T_3$, treatment was lower than that in black porgy reared in seawater with (ST) or without (SN) $T_3$ treatment. The concentration of $T_3$ in FT was significantly more than that in FN. Plasma cortisol in FT, at the same day, was 4 times higher than that in FN, whereas the differences of the hormone between ST and SN was not significant. Although the levels of plasma glucose in FN and FT tended to be lower than that in ST and SN, no differences were found between fish reared in freshwater and seawater after $T_3$ treatment. Aspartate aminotransferase (AST) and alanine aminotransferase (ALT) of black porgy reared in seawater showed no difference throughout the experimental period. However, at the beginning stages of the experiment, the plasma levels of these enzymes in FN and FT were higher than in SN and ST. Recovering of AST level to the level of SN or FT was laster in FT than in FN. However, no effects of the exogenous $T_3$ treatment on osmoregulatory capacity and growth of black porgy reared in freshwater or seawater were observed in this study.

• Journal of Periodontal and Implant Science
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• v.32 no.1
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• pp.143-160
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• 2002

타이태늄은 뛰어난 생체적합성과 적절한 물리적 성질을 바탕으로 치과 및 정형외과 영역의 매식재로 널리사용되어져 왔으며, 골과 매식재 사이의 골 융합 정도를 증가시킬 목적으로 물리, 화학적인 방법을 이용한 타이태늄의 표면처리에 관한 많은 연구들이 진행되어 왔다. 최근에는 부착단백질 또는 성장인자를 이용한 생체재료의 표면개질을 통하여 조직적합성 및 치유 능의 개선을 위한 시도들이 있어왔다. Fibronectin(FN)은 주요 세포외기질중의 하나로 생체 내 널리 분포하여 세포의 부착, 이동 및 증식에 관여하는 거대 당단백으로, RGD및 PHSRN 펩타이드 서열이 세포의 인테그린과 결합하여 세포의 활성을 조절하는 것으로 알려져 있다. 이 연구에서는 FN으로 처리된 타이태늄이 조골세포의 부착, 증식 및 분화에 미치는 영향과 이에 따른 석회화 정도에 미치는 영향을 관찰하여 부착분자를 이용한 타이태늄 표면개질의 효과를 규명하고자 하였다. 상업용 순수 타이태늄을 gold thiol법을 이용하여 표면처리 후, 혈장 FN(plasma FN, pFN)과 유전자재조합법을 이용하여 얻은 FN조각(FN type III 7-10, FNIII 7-10)을 피복한 시편을 실험군으로, 아무런 처리를 하지 않은것(smooth surface, SS)과 산 부식(Sandblasted and acid etched, SLA)처리된것을 대조군으로 이용하였다. 배양된 조골세포주(MC3T3-E1)를 사용하여 타이태늄 표면 처리에 따른 세포의 증식, 형태변화, 알칼리성 인산분해효소(ALPase) 생산 및 세포면역형광법을 이용한 분화정도를 시간 경과에 따라 관찰하였다. 조골세포증식의 경우 FNIII 7-10 처리군에서 pFN 처리군 및 대조군에 비해 시간경과에 따라 유의성있는 세포수의 증식이 관찰되었으며(p<0.05), ALPase 생성의 경우에도 FNIII 7-10 처리 군에서 아무 처리도 하지 않은 군에 비해 유의성 있게 높은 효소의 생성이 관찰되었다(p<0.05). 주사전자현미경을 이용한 세포의 형태관찰결과 아무 처리도 하지 않은 군에서는 마름모형태를 나타내었으며, 산 부식 처리된 군에서는 세포가 가시모양의 형태를 보인 반면 FN으로 처리된 두 군에서는 세포의 부착 및 펴짐이 매우 발달되어 있는 모습이 관찰되었다. 세포의 분화정도를 관찰하기 위하여 국소부착키나제(focal adhesion kinase, FAK), 및 actin stress fiber의 분포양상을 세포면역형광법을 이용하여 관찰한 결과 FN으로 표면처리된 두 군에서 아무런 처리도 하지않은 군 및 산 부식처리 한 군에 비해 프라크의 발현이 높게 나타났으며 잘 발달된 actin stress fiber의 소견을 나타내었다. 이 실험의 결과들은 gold thiol 법을 이용한 표면처리 후 FN부착을 통한 타이태늄의 표면개질이 조골세포의 부착, 증식 및 분화에 중요한 역할을 담당하여 석회화 정도를 촉진시키는 것을 보여주었으며, 이런 결과들은 더 짧은 FN조각을 이용한 다른 생체재료의 표면개질에 폭 넓게 응용할 수 있으리라 생각된다.

• Proceedings of the Korean Society of Plant Biotechnology Conference
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• 2005.11a
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• pp.27-39
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• 2005

a-Ketol linolenic acid [KODA, 9,10-ketol-octadecadienoic acid, or 9-hydroxy-10 -oxo-12(Z), 15(Z)-octadecadienoic acid] was found as a stress-induced factor in Lemna paucicostata. KODA reacts with catecholamines to generate many products that strongly induce flowering in L. paucicostata, although KODA itself was inactive. KODA contains an asymmetric carbon at the 9-position in the molecule; the 9-hydroxyl group is predominantly 9R, with an enantiomeric excess of 40% (70% 9R and 30% 9S). We analyzed two major products of the reaction between KODA and norepinephrine, named FN1 and FN2. FN1 was identified as a tricyclic a-ketol fatty acid, 9(R)-11-{(2'R,8’R,10'S,11'S)-2',8'-dihydroxy-7'-oxo-11'-[(Z)-2-pentenyl]-9'-oxa-4'-azatricyclo[6.3.1.01.5]dodec-5'en-10'-yl}-9-hydroxy-10-oxoundecanoic acid. FN2 was the C-9 epimer of FN1. FN1 was derived from 9R-type KODA and FN2 from 9S-type. FN1 showed strong flower-inducing activity, but FN2 was inactive. Pharbitis nil (violet) is a typical short-day plant; flowering can be induced by exposing a seedling cultivated under continuous light to a single 16-h dark period. We analyzed endogenous KODA levels and showed that they were closely related to flower induction: KODA sharply increased in the later part of a 16-h dark period, on the other hand, it failed to increase in the night-break experiment. In addition to it, KODA increased transiently in immature flower buds in all the plants we examined, including P. nil. No such increase of KODA was seen in foliar buds of P. nil. When KODA was sprayed on seedlings of Pharbitis, flower induction was promoted only by the (R)-form of KODA. We also found that KODA enhances flowering in garden plants such as carnations and impatienses. These phenomena indicate that KODA may be involved in flowering formationg of plants and it is potentially useful for a regulating agent for commercial plant flowering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.1-9
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• 2009

In this paper proposed a new method which adaptively eliminates comparator offsets using the threshold voltage shift by the Fowler-Nordheim stress. The method evaluates the sign of comparator offset and gives the FN stress to the stronger MOSFETs of the comparator, leading to offset reduction. We have used an appropriate stressing operation, named 'stress-packet', in order to converge the offset value to zero. We applied the method to the latch-type comparator which is prevalently used for DRAM bitline sense amplifier, and verified through experiments that offsets of the latch-type comparators are nearly eliminated with the stress-packet operations. We also discuss about the reliability issues that must be guaranteed for field application of this method.

• KIPS Transactions on Computer and Communication Systems
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• v.5 no.1
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• pp.1-6
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• 2016

This paper focuses on algorithm innovation of NAND Flash Memory for enhancing cell lifetime. During flash memory read/write/erase, the voltage of a specific cell should be a valid voltage level. If not, we cannot read the data correctly. This type of interference/disturbance tends to be serious when program and erase operation will go on. This is because FN tunneling results in tunnel oxide damage due to increased trap site on repetitive high biased state. In order to resolve this problem, we make the cell degradation by reducing the amount of stress in terms of erase cell, resulting in minimizing the cell disturbance on erase verify.

• Macromolecular Research
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• v.8 no.4
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• pp.179-185
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• 2000

Generally vascular grafts with a relatively large inner diameter (> 5 mm) have been successfully employed for replacement in the human body. However, the use of small diameter grafts is limited, because these grafts rapidly occlude due to the thrombosis. The ideal blood-contacting surface of a prosthesis would be an endothelial cell (EC) lining, because the confluent monolayer of healthy ECs that culture natural blood vessels represents the ideal nonthrombogenic surface. For vascular graft application, the stable EC adhesion on surface under How conditions is very important. In this study, the adhesive strength of ECs attached on polymer surfaces coated with collagen type IV (Col IV), fibronectin (Fn), laminin (Ln), and treated with corona was investigated onto polyurethane (PU) films. The EC-attached PU surfaces were mounted on parallel-plate flow chambers in a How system prepared for cell adhesiveness test. Three different shear stresses (100, 150, and 200 dyne/㎠) were applied to the How chambers and each shear stress was maintained for 120 min to investigate the effect of shear stress and surface treatment condition on the EC adhesion strength. It was observed that the EC adhesion strength on the surface-modified PU films was in the order of Ln≡Fn > Col IV > corona 》 control. More than 70% of the adhered cells were remained on surface-modified PU surface after applying the shear stress,200 dyne/㎠ for 2 hrs, whereas the cells were completely detached on the control PU surface within 10 min after applying the same shear stress. It seems that the type of adsorbed proteins and hydrophilicitv onto the PU surfaces play very important roles for cell adhesion strength.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.2
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• pp.223-225
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• 2016

The newly proposed analysis method using a direct-current current-voltage (DCIV) simulation is introduced for investigating leakage current composing MOS transistor. From comparing the density and location of traps using DCIV method and investigating the leakage current of gate channel transistor, we proposed the graphical analysis method to correlate the DCIV current and leakage mechanism by the traps. And, our graphical method intuitively explains that leakage current in MOS transistor is well correlated with the DCIV current of the MOS transistor arrays due to two kinds of traps created by Fowler-Nordheim (F-N) stress and Hot carrier stress, respectively.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.455-456
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• 2008

New CMOS ROM cell is reported in this paper, distinguished from conventional ones in that it can be re-programmed by multi-times. It uses the comparator offset as the physical storage quantity and the MOSFET FN stress effect for offset programming. It demands very low offset for read, and works well in very low voltage. It can become a promising ROM solution for various SoC systems.