Multi-time Programmable standard CMOS ROM memory cell

여러 번 프로그래밍이 가능한 표준 CMOS 공정의 MTP (Multi-times Programmable) ROM 셀

New CMOS ROM cell is reported in this paper, distinguished from conventional ones in that it can be re-programmed by multi-times. It uses the comparator offset as the physical storage quantity and the MOSFET FN stress effect for offset programming. It demands very low offset for read, and works well in very low voltage. It can become a promising ROM solution for various SoC systems.