• Journal of Welding and Joining
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• v.20 no.6
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• pp.816-822
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• 2002

Laser flash method have been widely used for practical measuring method of thermal diffusivity. And it can be used for measurement of non-conductive materials as well as conductive materials and also for measuring thermal multi-properties. We have analyzed effects of error occurring during measurement of thermal properties in order to enhance measuring accuracy. Also we have studied delay time between measurement starting time with synchronizing signal and laser oscillating time, because it is important that measuring a time to rise temperature of specimen from room temperature to a half of measuring temperature at measuring a thermal diffusivity by laser flash method. We could reduce non-uniform heating error from non-uniform energy distribution by developing 3D uniformizer to eliminate non-uniform heating error. We have measured thermal diffusivities of POCO AXM-5Q1 and Glassy-Carbon which are standard specimen of NIST(USA) and candidate standard specimen of NRLM(japan) respectively for laser flash method. Maximum error fell within 2% for POCO AXM-5Ql gaphite and 2% for Glassy-Carbon. Those results showed error decreasing methods were effective.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.331-331
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• 2012

With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.329-329
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• 2012

Mobile 기기로 둘러싸여있는 현대의 환경에서 Flash memory에 대한 중요성은 날로 더해가고 있다. Flash memory의 가격 경쟁력 강화와 사용되는 기기의 소형화를 위해 flash memory의 비례축소가 중요한 문제로 부각되고 있다. 그러나 다결정 실리콘을 플로팅 게이트로 이용하는planar flash memory 소자의 경우 비례 축소 시 short channel effect 와 leakage current, subthreshold swing의 증가로 인한 성능저하와 같은 문제들로 인해 한계에 다다르고 있다. 이를 해결하기 위해 CTF 메모리 소자, nanowire FET, FinFET과 같은 새로운 구조를 가지는 메모리소자에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 22 nm 게이트 크기의 FinFET 구조를 가지는 플래시 메모리소자에서 fin의 두께와 높이의 변화에 따른 메모리 소자의 전기적 특성을 3-dimensional 구조에서 technology computer aided design ( TCAD ) tool을 이용하여 시뮬레이션 하였다. 본 연구에서는 3D FinFET 구조를 가진 플래시 메모리에 대한 시뮬레이션 하였다. FinFET 구조에서 채널영역은 planar 구조와 다르게 표면층이 multi-orientation을 가지므로 본 계산에서는 multi-orientation Lombardi mobility model을 이용하여 계산하였다. 계산에 사용된 FinFET flash memory 구조는 substrate의 도핑농도는 $1{\times}10^{18}$로 하였으며 source, drain, gate의 도핑농도는 $1{\times}10^{20}$으로 설정하여 계산하였다. Fin 높이는 28 nm로 고정한 상태에서 fin의 두께는 12 nm부터 28nm까지 6단계로 나누어서 각 구조에 대한 프로그램 특성과 전기적 특성을 관찰 하였다. 계산결과 FinFET 구조의 fin 두께가 두꺼워 질수록 채널형성이 늦어져 threshold voltage 값이 커지게 되고 subthreshold swing 값 또한 증가하여 전기적 특성이 나빠짐을 확인하였다. 각 구조에서의 전기장과 전기적 위치에너지의 분포가 fin의 두께에 따라 달라지므로써 이로 인해 프로그램 특성과 전기적 특성이 변화함을 확인하였다.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.1
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• pp.54-61
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• 2008

This paper presents a new TIQ based CMOS flash 6-bit ADC to process digital signal in real time. In order to improve the conversion speed of ADC by designing new logic or layout of ADC circuits, a new design method is proposed in encoding logic circuits. The proposed encoding circuits convert analog input into digitally encoded double base number system(DBNS), which uses two bases unlike the normal binary representation scheme. The DBNS adopts binary and ternary radix to enhance digital arithmetic processing capability. In the DBNS, the addition and multiplication can be processed with just shift operations only. Finding near canonical representation is the most important work in general DBNS. But the main disadvantage of DBNS representation in ADC is the fan-in problem. Thus, an equal distribution algorithm is developed to solve the fan-in problem after assignment the prime numbers first. The conversion speed of simulation result was 1.6 GSPS, at 1.8V power with the Magna $0.18{\mu}m$ CMOS process, and the maximum power consumption was 38.71mW.

• Proceedings of the KSMRM Conference
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• 1999.11a
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• pp.45-45
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• 1999

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.260-264
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• 2017

Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Fire Science and Engineering
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• v.20 no.3 s.63
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• pp.29-34
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• 2006

The flash and fire point are the most important combustible properties used to determine the potential for the fire and explosion hazards of flammable material. The flash point is defined as the lowest temperature at which a flammable liquid gives off sufficient vapor to form an ignitable mixture with air near its surface or within a vessel. The fire point is the temperature of the flammable liquid at which there will be flaming combustion, sustained 5 seconds in response to the pilot flame. In this study, the flash points and fire points were measured to present raw data of the flammable risk assessment for acids, using Pensky-Martens Closed Cup(C.C.) apparatus (ASTM-D93) and Tag Open-cup (O.C.) apparatus(ASTM D 1310-86). The measured fire points were compared with the estimated values based on 1.11 times stoichiometric concentration. The values calculated by the proposed equation were in good agreement with measured values.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.16-23
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• 2010

This paper presents 6bit 250MS/s flash A/D converter which can be applied to wireless communication system. To solve the problem of large power consumption in flash A/D converter, control algorithm by input signal level is used in comparator stage. Also, input voltage range detector circuit is used in reference resistor array to minimize the dynamic power consumption in the comparator. Compared with the conventional A/D converter, the proposed A/D converter shows 4.3% increase of power consumption in analog and a seventh power consumption in digital, which leads to a half of power consumption in total. The A/D converter is implemented in a $0.18{\mu}m$ CMOS 1-poly 6-metal technology. The measured results show 106mW power dissipation with 1.8V supply voltage. It shows 4.1bit ENOB at sampling frequency 250MHz and 30.27MHz input frequency.

• Fire Science and Engineering
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• v.29 no.5
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• pp.1-6
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• 2015

Flash point is one of the most important variables used to characterize fire and explosion hazard of liquids. The lower flash point data were measured for the binary systems {methanol + 1-butanol}, {ethanol + 1-butanol} and {2-propanol + 1-butanol} at 101.3 kPa. Experiments were performed according to the standard test method (ASTM D 3278) using a SETA closed cup flash point tester. The measured flash points were compared with the predicted values calculated using the following activity coefficient models: Wilson, Non-Random Two Liquid (NRTL), and UNIversal QUAsiChemical (UNIQUAC). The measured FP data agreed well with the predicted values of Raoult's law, Wilson, NRTL and UNIQUAC models. The average absolute deviation between the predicted and measured lower FP was less than 1.14 K.