• Applied Microscopy
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• 제45권4호
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• pp.189-194
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• 2015

Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).

• Applied Microscopy
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• 제41권3호
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• pp.147-154
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• 2011

후방산란전자(BSE)는 입사전자빔이 시료와 충돌하면서 발생한다. BSE 이미징은 시료의 화학적 특성을 구분할 수 있는 조성대비를 제공한다. 집속이온빔장치(FIB)는 전계방사형 주사전자현미경(FESEM)과 결합할 수 있으므로 이중빔 체계(FIB-FESEM)가 구현된다. 갈륨(Ga) 이온빔으로 10~100 nm 두께로 시료를 절삭할 수 있으므로 FIB-FESEM은 플라스틱으로 포매된 블록의 면을 z축 고해상도를 유지하며 연속적으로 이미징할 수 있다. BSE이미지의 대비를 반전시키면 투과전자현미경의 이미지와 유사하다. 연속블록면 이미징의 또 다른 방안으로써 특수한 초박절편기가 FESEM 내부에 장착된 것이 $3View^{(R)}$로 상용화되어 있다. 이로써 플라스틱으로 포매된 시료의 내부 구조를 넓은 면적을 연속적으로 이미징 할 수 있으므로 3차원 재구성도 용이하게 된다. 이러한 FESEM에 기반한 두 가지 방식은 복잡한 생물계의 총체적인 이해를 위하여 세포 및 세포 수준 이하의 구조물 간의 공간적 연관성을 규명하는 데 활용될 수 있다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.21-21
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• 2003

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.335-336
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• 2009

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2005년도 춘계학술대회 논문집
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• pp.24-29
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• 2005

Fm (Focused ion beam) system is one of the most important equipments for the nano-scale machining. Various researches have been performed, since it can etch the material and deposit 3-D structure with high-aspect-ratio in the nanometer scale. In spite of those researches, the definite method for the reliability of FIB system has not been reported. In this paper, we proposed the reliability assessment method through nano-pattern fabrication. In the fabricated nano-pattern, the characteristics of FIB system are included. Using this effect, we tried to assess the FIB reliability. First, we suggested reliability assessment items and nano-patterns. And, to know the suitableness of the proposed method, we fabricated several nano-patterns using Nova200(FEI Company) and SMI2050(SEIKO) which are FIB apparatuses. The fabricated nano-patterns are measured with SEM (Scanning Electron Microscope) and compared with designed dimensions. And the compared results showed that the proposed method is suitable for the assessment of FIB system reliability.

• Applied Microscopy
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• 제50권
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• pp.24.1-24.11
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• 2020

The development of the femtosecond laser (fs laser) with its ability to provide extremely rapid athermal ablation of materials has initiated a renaissance in materials science. Sample milling rates for the fs laser are orders of magnitude greater than that of traditional focused ion beam (FIB) sources currently used. In combination with minimal surface post-processing requirements, this technology is proving to be a game changer for materials research. The development of a femtosecond laser attached to a focused ion beam scanning electron microscope (LaserFIB) enables numerous new capabilities, including access to deeply buried structures as well as the production of extremely large trenches, cross sections, pillars and TEM H-bars, all while preserving microstructure and avoiding or reducing FIB polishing. Several high impact applications are now possible due to this technology in the fields of crystallography, electronics, mechanical engineering, battery research and materials sample preparation. This review article summarizes the current opportunities for this new technology focusing on the materials science megatrends of engineering materials, energy materials and electronics.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.193-199
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• 2000

As an energetic focused-ion beam(FIB) is irradiated on an inorganic amorphous thin film a majority of ions without a reflection at surface, is randomly collided with constituent atoms in thin film. but their distribution exhibits generally a systematic form of distribution. In our previous paper we reported the concentration distribution and the transmission per unit depth of Ga$^{+}$ ions penetrated int a-Se$_{75}$ /Ge$_{25}$ thin film using the LSS-based calculation. In this paper these simulated results are compared with those obtained by a conventional profile code(ISC) and a practical SIMS profile. Then the results of LSS-based calculation have only a small difference with those of code and SIMS Especially. in the case of Ga$^{+}$-FIB with an accelerating energy of 15keV. the depth of the maximum ion concentration is coincident with each other in an error range of $\pm$5$\AA$.EX>.

• 한국정밀공학회지
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• 제28권1호
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• Applied Microscopy
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• 제42권4호
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• pp.223-227
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• 2012

Focused Ion Beam (FIB) systems have incorporated versatile nanomanipulators with inherent sophisticated machining capability to characterize the electrical properties of highly miniature components of electronic devices. Carbon fibers were chosen as a model system to test the applicability of nanomanipulators to microscale electronic materials, with special emphasis on the direct current current-voltage characterizations in terms of electrode configuration. The presence of contact resistance affects the electrical characterization. This resistance originates from either i) the so-called "spreading resistance" due to the geometrical constriction near the electrode - material interface or ii) resistive surface layers. An appropriate electrode strategy is proposed herein for the use of FIB-based manipulators.

• Applied Microscopy
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• 제46권1호
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• pp.14-19
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• 2016

Currently, focused ion beams (FIB) are widely used for specimen preparation in atom probe tomography (APT), which is a three-dimensional and atomic-scale compositional analysis tool. Specimen preparation, in which a specific region of interest is identified and a sharp needle shape created, is the first step towards successful APT analysis. The FIB technique is a powerful tool for site-specific specimen preparation because it provides a lift-out technique and a controllable manipulation function. In this paper, we demonstrate a general procedure containing the crucial points of FIB-based specimen preparation. We introduce aluminum holders with moveable pin and an axial rotation manipulator for specimen handling, which are useful for flipping and rotating the specimen to present the backside and the perpendicular direction. We also describe specimen preparation methods for nanowires and nanopowders, using a pick-up method and an embedding method by epoxy resin, respectively.