• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.487-495
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• 2023

Over the past few decades, considerable research has been conducted on field-effect transistor (FET) biosensors; however, other than electrochemical sensors for pH, they have not reached the commercialization stage and still remain at the basic research level. Although several reports have been published on experiments with real biological samples, no reports exist of developments that have reached commercialization or finalized approval for use. In this paper, we explain the reason for the experiments of FET biosensors to induce spurious signals in an experimental setup and explain the existence of misunderstandings regarding the operating principle of FET biosensors owing to the spurious signals. Based on the thoughtful review of the results of previously published papers, we show that the electrochemical read-out principle of FET biosensors requires our intensive understanding of the interfacial potential between the solution and the sensor electrode for further progress in the FET biosensor research.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.3
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• pp.41-48
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• 2014

This paper proposes a new sensor circuit using a 32 nm carbon nanotube FET (CNFET) technology for artificial skin. For future robotic and prosthetic applications, it is essential to develop a robust and low power artificial skin for detecting the environment through touch. Therefore, a sensor circuit for the artificial skin also has to be developed to detect the sensor signals and convert them into digital bits. The artificial skin sensor is based on a mesh of sensors consisting of a nxn matrix using CNFET, and the sensor outputs are connected to a current monitoring circuit proposed as the sensor circuit. The proposed sensor provides pressure measurements and shape information about pressure distribution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.589-595
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• 2017

MOS-FET structured gas sensors were manufactured using MWCNTs for application as NOx gas sensors. As the gas sensors need to be heated to facilitate desorption of the gas molecules, heat dispersion plays a key role in boosting the degree of uniformity of molecular desorption. We report the desorption of gas molecules from the sensor at $150^{\circ}C$ for different sensor electrode gaps (30, 60, and $90{\mu}m$). The COMSOL analysis program was used to verify the process of heat dispersion. For heat analysis, structure of FET gas sensor modeling was proceeded. In addition, a property value of the material was used for two-dimensional modeling. To ascertain the degree of heat dispersion by FEM, the governing equations were presented as partial differential equations. The heat analysis revealed that although a large electrode gap is advantageous for effective gas adsorption, consideration of the heat dispersion gradient indicated that the optimal electrode gap for the sensor is $60{\mu}m$.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.236-242
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• 2021

In this paper, we report the fabrication of the tip-on-gate of a field-effect-transistor (ToGoFET) probe using a standard complementary metal-oxide-semiconductor (CMOS) process and the performance evaluation of the fabricated probe. After the CMOS process, I-V characteristic measurement was performed on the reference MOSFET. We confirmed that the ToGoFET probe could be operated at a gate voltage of 0 V due to channel ion implantation. The transconductance at the operating point (Vg = 0 V, Vd = 2 V) was 360 ㎂/V. After the fabrication process was completed, calibration was performed using a pure metal sample. For sensitivity calibration, the relationship between the input voltage of the sample and the output current of the probe was determined and the result was consistent with the measurement result of the reference MOSFET. An oxide sample measurement was performed as an example of an application of the new ToGoFET probe. According to the measurement, the ToGoFET probe could spatially resolve a hundred nanometers with a height of a few nanometers in both the topographic image and the ToGoFET image.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.226-229
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• 2011

Label-free detection of biomolecular interactions was performed using BioFET(Biologically sensitive Field-Effect Transistor) and SPR(Surface Plasmon Resonance). Qualitative information on the immobilization of an anti-IgG and antibody-antigen interaction was gained using the SPR analysis system. The BioFET was used to explore the pI value of the protein and to monitor biomolecular interactions which caused an effective charge change at the gate surface resulting in a drain current change. The results show that the BioFET can be a useful monitoring tool for biomolecular interactions and is complimentary to the SPR system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.257-261
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• 2014

Carbon nanotubes (CNT) has the excellent physical characteristics in the sensor, medicine, manufacturing and energy fields, and it has been studied in those fields for the several years. We fabricated the NOx gas sensors of MOS-FET type using the MWCNT. The fabricated sensor was used to detect the NOx gas for the variation of $V_{gs}$ (gate-source voltage) with the ambient temperature. The gas sensor absorbed the NOx gas molecules showed the decrease of resistance, and the sensitivity of sensor was reduced by the NOx gas molecules accumulated on the MWCNT surface. Furthermore, when the voltage ($V_{gs}$) was applied to the gas sensor, the term of the decrease in resistance was increased. On the other hand, the sensor sensitivity for the injection of NOx gas was the highest value at the ambient temperature of $40^{\circ}C$. We also obtained the adsorption energy ($40^{\circ}C$) using the Arrhenius plots by the reduction of resistance due to the $V_{gs}$ voltage variations. As a result, we obtained that the adsorption energy also was increased with the increasement of the applied $V_{gs}$ voltages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.403-407
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• 2015

Generally, MWCNT, with thermal, chemical and electrical superiority, is manufactured with CVD (chemical vapor deposition). Using MWCNT, it is comonly used as gas sensor of MOS-FET structure. In this study, in order to repeatedly detect gases, the author had to effectively eliminate gases absorbed in a MWCNT sensor. So as to eliminate gases absorbed in a MWCNT sensor, the sensor was applied heat of 423[K], and in order to observe how the applied heat was diffused within the sensor, the author interpreted the diffusion process of heat, using COMSOL interpretation program. In order to interpret the diffusion process of heat, the author progressed modeling with the structure of MWCNT gas sensor in 2-dimension, and defining heat transfer velocity($u={\Delta}T/{\Delta}x$), accorded to governing equation within the sensor, the author proposed heat transfer mechanism.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.11
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• pp.148-155
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• 1997

Ths signal processing technqiue of FET type electrolyte sensors using the back propagation neural network was studied to reduce the interference effects of the different electrolytes. The FET-type electrolyte sensors, pH-ISFET, K-ISFET, and Ca-ISFET, were prepared to measure the pH, K, and Ca electrolytes. Neural network consisted of three layers was learned with 8 patterns and 9 patterns. The sensor output obtained with arbitrary concentrations was processed by the learned neural network. The errors obtained from calibration curve for pH, K, and Ca were .+-.0.039 pH, .+-.2.508 mmol/l, and .+-.1.807 mmol/l, respectively, without considering the interference effects. The errors of the network output for pH, K, and Ca were reduced to .+-.0.005 pH, .+-.0.436 mmol/l, and .+-.0.381 mmol/l in case of 9 patterns, respectively. the signal processing using the neural network can reduce the errors ofthe electrolyte sensor outputs caused by the interference effect, thereby providing effectiveness in the improvement of the sensor selectivity.

• Journal of Sensor Science and Technology
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• v.10 no.4
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• pp.259-265
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• 2001

FET-type dissolved oxygen sensor has the Pt working electrode around the pH-ISFET. Appling a voltage to the working electrode, the hydrogen ion which is proportional to the dissolved oxygen concentration occurs around the pH sensing gate and we can measure the dissolved oxygen concentration by detecting pH concentration through the pH-ISFET. In this paper, a dissolved oxygen measurement system using FET-type dissolved oxygen sensor array which adopt a specific algorithm to enhance the reliability has been developed and we compared its performance with the commercial dissolved oxygen measurement system.