• Title/Summary/Keyword: FBAR Filter

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Thin Film Bulk Acoustic Resonator(FBAR) Bandpass Filter Design Technique Using Genetic Algorithm (유전자알고리즘을 이용한 FBAR RF 대역통과여파기 설계기법)

  • 이정흠;김형동
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.3
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    • pp.10-17
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    • 2003
  • In this paper, genetic algorithm (GA)-based Thin Film Bulk Acoustic Resonator (FBAR) RF filter design technique is proposed. Since the BVD(Butterworth-Van Dyke) lumped element model is valid only around the resonance, FBAR filter design technique based on BVD circuit has an approximate error. Instead of using BVD model, optimizing filter design method utilizes an analytical electrical impedance equation of FBAR. The geometry of FBAR such as thickness of the piezoelectric layer and area which significantly affect the filter response is optimized by GA. US-PCS Rx Bandpass filter obtained by the proposed technique shows a better response comparing with the typical and BVD-based filter.

FBAR devices for RF bandpass filter applications (박막형 FBAR 공진기 설계 및 제작)

  • Yoon, Gi-Wan;Park, Sung-Chang
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.7
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    • pp.1321-1325
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    • 2001
  • In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO2/W stacked multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

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FBAR devices for RF bandpass filter applications (RF 대역통과필터 응용을 위한 FBAR 소자)

  • Giwan Yoon;Park, Sungchang
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.10a
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    • pp.621-625
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    • 2001
  • In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO$_2$/W slatted multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

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Fabrication Techniques & Resonance Characteristics of FBAR Devices (FBAR 소자의 제작기법 및 공진특성)

  • Yoon, Gi-Wan;Song, Hae-Il;Lee, Jae-Young;Mai, Linh;Kabir, S.M. Humayun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.11
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    • pp.2090-2094
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    • 2007
  • Film bulk acoustic wave resonator(FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

Fabrication Techniques and Their Resonance Characteristics of FBAR Devices

  • Yoon, Gi-Wan;Song, Hae-Il;Lee, Jae-Young;Mai, Linh;Kabir, S. M. Humayun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.204-207
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    • 2007
  • Film bulk acoustic wave resonator (FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

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Frequency property of FBAR RF fitter using PZT (FBAR(Film Bulk Acoustic Resonator)의 주파수 특성에 관한 연구)

  • Yun, Chang-Jin;Jung, Yung-Hak;Kim, Eung-Kwon;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.57-60
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    • 2003
  • This paper describes the modeling and simulation results for film bulk acoustic resonators(FBAR). We present the frequency tuning mechanisms, analytical solutions of the wave equation and the influence of the thickness of the electrodes. The impedance for PZT based FBAR is derived utilizing proper boundary conditions and their material parameters. Ferroelectrics-based RF filter composed of FBARs are designed.

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FBAR Device with Thin AlN Piezoelectric Film for 2 GHz RF Bandpass Filter Applications (2 GHz 대역 RF 대역통과 필터 응용을 위한 AlN 압전 박막을 이용한 FBAR 소자)

  • Giwan Yoon;Munhyuk Yim;Dongkyu Chai;Kim, Sanghee;Kim, Jongheon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.2
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    • pp.250-254
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    • 2003
  • A film bulk acoustic resonator (FBAR) device for 2 GHz radio frequency (RF) bandpass filter application is presented. This FBAR device consists of an aluminum nitride (AlN) film sandwiched between top(Al) and bottom(Au) electrodes and an acoustic multilayer reflector of a silicon dioxide/tungsten (SiO2/W). The A/N film deposited using a RF sputtering was observed to have small columnar grains with a strongly preferred orientation towards c axis. In addition to a high quality factor (4300), a large return loss of 37.19 dB was obtained.

A Study of the Fabrication and Enhancement of Film Bulk Acoustic Wave Resonator using Two-Step Deposition Method of Piezoelectric Layer (압전층의 2단 증착법을 이용한 체적 음향파 박막형 공진기의 제작과 성능향상에 관한 연구)

  • Park Sung-Hyun;Chu Soon-Nam;Lee Neung-Heon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.7
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    • pp.308-314
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    • 2005
  • The 2 GHz film bulk acoustic wave resonator(FBAR), one of the most necessary device of the next generation mobile communication system, consisted of solidly mounted resonator(SMR) structure using Brags reflector, was researched in this paper The FBAR applied SiO$_{2}$ and W had large difference of the acoustic impedance to reflector Al to electrode and ZnO to piezoelectric layer. Specially, the FBAR applied the two-step deposition method to improve the c-axis orientation and increase reproducibility of the fabrication device had good performance. The electrical properties of plasma such as impedance, resistance, reactance, $V_{pp},\;I{pp}$, VSWR and phase difference of voltage and current, was analyzed and measured by RF sensor with the variable experiment process factors such as gas ratio, RF power and base vacuum level about concerning the thickness, c-axis orientation, adhesion and roughness. The FBAR device about the optimum condition resulted reflection loss(S$_{11}$) of -17 dB, resonance frequency of 1.93 GHz, electric-mechanical coefficient(k$_{eff}$) of 2.38 $\%$ and Qualify factor of 580. It was seen better qualify than the common dielectric filter at present and expected on business to the filter device of 2 GHz bandwidth with the MMIC technology.

Fabrication of Film Bulk Acoustic Wave Filters with Ladder and Stacked Crystal Filter Types (Ladder 형과 SCF 형의 구조를 가지는 FBAR 필터의 제작)

  • ;;Mai Linh
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.10a
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    • pp.630-632
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    • 2003
  • In this paper, we present the fabrication and performance of FBAR filters with ladder and stacked crystal filter (SCF) types. The structure of the unit resonator in our work is the solidly mounted resonator (SMR) with W/SiO$_2$ multi-layer reflectors, the return loss of of which show -24dB at resonant frequency of -2.0GHz. The $K^2$eff, Q$_{s}$, and Q$_{p}$, indicating the performance of resonator were 3.24%, 6,363 and 6,749 and were calculated for the resonator with the resonance area of 21200${\mu}{\textrm}{m}$$^2$. Based on this unit resonator, FBAR filters with ladder and SCF types were fabricated and compared. The sizes of filters were 800$\times$2000(${\mu}{\textrm}{m}$$^2$) for the ladder type and 600$\times$500(${\mu}{\textrm}{m}$$^2$) for the SCF type.e..

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Film Bulk Acoustic Wave Resonator for Bandpass Filter (밴드패스필터 구현을 위한 압전박막공진기 제작)

  • 김인태;박윤권;이시형;이윤희;이전국;김남수;주병권
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.12
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    • pp.597-600
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    • 2002
  • Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed $Si_3N_4SiO_2Si _3N_4$ multi layer and air gap is about 50${\mu}{\textrm}{m}$. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, $K^2_{eff}$ and Q are 4.1% and 1100.