Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Fabrication Techniques and Their Resonance Characteristics of FBAR Devices

  • Yoon, Gi-Wan (School of Engineering, Information and Communications University) ;
  • Song, Hae-Il (Hynix) ;
  • Lee, Jae-Young (School of Engineering, Information and Communications University) ;
  • Mai, Linh (School of Engineering, Information and Communications University) ;
  • Kabir, S. M. Humayun (School of Engineering, Information and Communications University)
  • Published : 2007.10.26
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Abstract

Film bulk acoustic wave resonator (FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

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