• Journal of the Korean Society of Costume
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• v.64 no.2
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• pp.113-125
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• 2014

Creative thinking requires an ability to draw ideas on the given topic in a given time period with concentration. For this, the development process of design concept on the topic was collected through experiments and interviews targeting 10 fashion education experts and 10 clothing majors. After the analysis, the results are as follows: First of all, divergent thinking was done to find as many ideas and possibilities as possible at the step of expanding the topic by analogy. This showed characteristics of spreading thoughts through the spread of lexicon to professional field knowledge of learned, individual's cultural background, other art fields. Second, abstracted and designed words that are expanded and listed by the topic analogy were specified the topic gradually through the free combination method between lexicons. The sentences made by the combination of lexicons were interpreted through the serial listing method, in which the connection between sentences had the meaning of orderly cause and effect form, and the parallel listing method that treated information at once. Third, the few characteristics of the procedure that visualizing into the specific design are as follows. Firstly, the method to transform image that lexicon has into the one appropriate to the topic, the case that reflects external characteristics of selected designed word, and the case which reflects as the extrinsic expression of personal immanent and tactic desires. This study has its means to propose methods and directions to help create more creative and systematic ideas by analyzing the characteristics that appeared during the process of thinking language-oriented design.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.857-860
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• 2005

We reported 94 GHz, low conversion loss, and high isolation single balanced active-gate mixer based on 70 nm gate length InGaAs/InAlAs metamorphic high electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5 ${\sim}$ 2.8 dB and under -30 dB, respectively, in the range of 93.65 ${\sim}$ 94.25 GHz. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, a extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency ($f_t$) of 330 GHz, and a maximum oscillation frequency ($f_{max}$) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line (DAML) structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.3 s.309
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• pp.8-15
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• 2006

Obstacle detection is an important task for many mobile robot applications. The methods using stereo vision and optical flow are computationally expensive. Therefore, this paper presents a vision-based obstacle detection method using only two view images. The method uses a single passive camera and odometry, performs in real-time. The proposed method is an obstacle detection method using 3D reconstruction from taro views. Processing begins with feature extraction for each input image using Dr. Lowe's SIFT(Scale Invariant Feature Transform) and establish the correspondence of features across input images. Using extrinsic camera rotation and translation matrix which is provided by odometry, we could calculate the 3D position of these corresponding points by triangulation. The results of triangulation are partial 3D reconstruction for obstacles. The proposed method has been tested successfully on an indoor mobile robot and is able to detect obstacles at 75msec.

• The Journal of Korean Physical Therapy
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• v.15 no.2
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• pp.67-74
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• 2003

Nervous system is clinically important, and involved in most disorders directly or indirectly. It could be injury and be a source of symptoms. Injury of central or peripheral nervous system injury may affect that mechanism and interrupt normal function. An understanding of the concepts of axonal transport is important for physical therapist who treat injury of nerves. Three connective tissue layers are the endoneurium, perineurium, epineurium. Each has its own special structural characteristics and functional properties. The blood supply to the nervous system is well equipped in all dynamic and static postures with intrinsic and extrinsic vasculation. After nerve injury, alternations in the ionic compression or pressures within this environment may interfere with blood flow and, consequently conduction and the flow of axoplasm. The cytoskeleton are not static. On the contrary, elements of the cytoskeleton are dynamically regulated and are very likely in continual motion. It permits neural mobility. There are different axonal transport systems within a single axon, of which two main flows have been identified : First, anterograde transport system, Secondly, retrograde transport system. The nervous system adapts lengthening in two basic ways. The one is that the development of tension or increased pressure within the tissues, increased intradural pressure. The other is movements that are gross movement and movement occurring intraneurally between the connective tissues and the neural tissues. In this article, we emphasize the biologic aspects of nervous system that influenced by therapeutic approaches. Although identified scientific information in basic science is utilized at clinic, we would attain the more therapeutic effects and develop the physical therapy science.

• Tunnel and Underground Space
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• v.18 no.6
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• pp.465-479
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• 2008

For the quantitative identification of rock behavior in shallow tunnels, we recommend using the rock behavior index (RBI) by the analytic hierarchy process (AHP) and the Rock Engineering Systems (RES). AHP and RES can aid engineers in effectively determining complex and un-structured rock behavior utilizing a structured pair-wise comparison matrix and an interaction matrix, respectively. Rock behavior types are categorized as rock fall, cave-in, and plastic deformation. Seven parameters influencing rock behavior for shallow depth rock tunnel are determined: uniaxial compressive strength, rock quality designation (RQD), joint surface condition, stress, pound water, earthquake, and tunnel span. They are classified into rock mass intrinsic, rock mass extrinsic, and design parameters. An advantage of this procedure is its ability to obtain each parameter's weight. We applied the proposed method to the basic design of Seoul Metro Line O and quantified the rock behavior into RBI on rock fall, cave-in, and plastic deformation. The study results demonstrate that AHP and RES can give engineers quantitative information on rock behavior.

• Journal of Internet Computing and Services
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• v.6 no.5
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• pp.57-71
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• 2005

Precise visual measurement applications, like video measuring system (VMS), use camera systems with motorized zoom lens for fast and efficient measurement. In this paper, we introduce an efficient calibration method for zoom lens of VMS controlled by servo motor. For the automated zoom lens calibration of the VMS, only zoom lens setting needs to be calibrated and parameters calibrated by zoom lens settings are image center and pixel size changed by zoom levels, The extrinsic parameters, like focus and iris, do not need to be calibrated since the parameters are usually fixed, It needs a lot of time and effort to calibrate the camera for ali the different zoom levels. In this paper, we also propose an efficient and fast zoom lens calibration method, which calculates the calibration parameters of the zoom lens settings for the minimum number of zoom levels and estimates other parameters for the uncalculated zoom levels using the interpolation of the calculated parameter values.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.48-53
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• 2008

In this paper, we developed the MMIC low noise amplifier using 100 nm metamorphic HEMTs technology in combination with coplanar circuit topology for 94 GHz applications. The $100nm\times60{\mu}m$ MHEMT devices for the MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm, an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency $(f_T)$ and maximum oscillation frequency $(f_{max})$ were 195 GHz and 305 GHz, respectively. The realized MMIC LNA represented $S_{21}$ gain of 14.8 dB and noise figure of 4.6 dB at 94 GHz with an over-all chip size of $1.8mm\times1.48mm$.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.771-774
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• 2003

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.