• Title/Summary/Keyword: Excimer

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Theoretical Analysis of Buffer Gas Effects of a Discharge Excited KrF Laser (방전여기 KrF 레이저의 완충가스 영향에 대한 이론 해석)

  • 최부연;이주희
    • Korean Journal of Optics and Photonics
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    • v.1 no.1
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    • pp.33-39
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    • 1990
  • By developing a computer simulation code for discharge excited KrF excimer laser, we analyzed mainly the effects of buffer gas for the $KrF^*$ formation. the $KrF^*$ relaxation. and the absorption of the laser radiation. The $KrF^*$ formation efficiency were found to be 7.5%, 19% and the $KrF^*$ relaxation kinetic reactions were found to be 45%, 30% at the charging voltage of 30 KV and He. Ne buffer gas. respectively. But the absorption of the 248 nm laser radiation were less than 10% by the buffer gas.er gas.

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Four Spherical Mirror Stepper Optics for Deep UV Micro-Lithography (Deep UV 마이크로 리소그라피용 Stepper를 위한 4구면 반사경계)

  • 조영민;이상수;박성찬
    • Korean Journal of Optics and Photonics
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    • v.2 no.4
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    • pp.186-192
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    • 1991
  • For the micro-lithography using a excimer laser beam $(\lambda\leq0.248$\mu\textrm{m})$. a mirror system consisting of four spherical surfaces with reductlon magnification 5X is designed. Initially the aplanat, flat field and the distortion free condition of the system are analytically investigated within Seidel 3rd order aberrations. And the computer-aided optimization technique has been employed for the further improved performance of the system. The final system has N.A. of 0.15 and image field diameter 3.3 mm, and has the diffraction-limited performance for KrF eximer laser beam.

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Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films

  • Ko, Da-Yeong;Ro, Jae-Sang
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.4
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    • pp.101-104
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    • 2018
  • An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

Synthesis and Physicochemical Properties of Polynucleotide Analogues Containing Pyrimidine Bases

  • Han, Man Jung;Kim, Gi Ho;U, Gyeong Su;Jang, Ji Yeong;Park, Yeong Dong
    • Bulletin of the Korean Chemical Society
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    • v.21 no.3
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    • pp.321-327
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    • 2000
  • Polynucleotide analogues containing pyrimidine (uracil and thynime) bases, $poly[(1'{\beta}-uracil-1-yl-2'.5'-dideoxy-D-glycero-pent-4'-enofuranose)-alt-(maleic$ acid)] (12) and $poly[(1'-{\beta}-thymin-1-yl-2'5'-dideoxy-D-glycero-pent-4'-enofuranose)-alt-(maleic$, acid)] (15), were synthesized by the altermating copolymerization of relevant nucleosied derivatives and maleic anhydride, and the subsequent hydrolysis. The polymers had quite similar structures to the natural polymes and were soluble in water, They showed high hypochromicities up to 49% and excimer fluorescence due to the base stacking, and polyelectrolyte behavior. Since the polymers had compact structrures, depyrimidinations, the release of pyrimidine bases from the polymer backbone, occurred in aqueous solutions with higher rates compared with those of the natural polymers.

Optical Equipment in Computer Manufacturing

  • Wilczynski, Janusz S.
    • Proceedings of the Optical Society of Korea Conference
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    • 1991.06a
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    • pp.1-1
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    • 1991
  • The fabrication of computer components requires a great variety of optical equipment. The patterning of integrated circuits is performed either on step-and-repeat cameras, scanning systems or step-and-repeat systems. The image forming optics used in these machines is quite difficult to design and fabricate. In addtion several layers of patterns must be precisely superposed, and also the illuminators have to provide the final irradiance in the image plane constant to within 1%. Other uses of specialized optical equipment are mass production of chip packages, inspection scanners and laser ablation cameras for polymers. The details of some of these systems will be described with particular ephasis on different optical structures and the use of excimer lasers as light sources.

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On the influence of polymer surface layer thickness on the adhesion of composite assembly. Differences between initial state and thermal ageing.

  • Benard, Q.;Fois, M.;Picard, C.;Grisel, M.
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.363-363
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    • 2006
  • Bonding of composite materials with an adhesive layer is one of the most promising alternatives to classical bonding techniques. The use of several surface treatments may greatly increase this adhesion behavior at the initial state. Then in order to see the influence of the thickness of polymer matrix on the adhesion of composite assembly, different surface treatment, which can reduce or increase this thickness, are used (peel ply, tear ply, excimer laser). The influence of this specific parameter is not only discussed at the initial state but also after thermal ageing of the whole bonded assembly. Results show that the best performances at the initial state are not obviously the best performances after ageing.

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X-X: Single-Crystalline Si TFTs Fabricated with ${\mu}-Czochralski$ (grain-filter) process

  • Ishihara, R.;Dijk, B.D.van;Wilt, P.Ch. van der;Metselaar, J.W.;Beenakker, C.I.M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.159-162
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    • 2002
  • This paper reviews an advanced excimer-laser crystallization technique enabling precise location-control of the individual grains. With the developed ${\mu}$-Czochralski (grain-filter) process, the large grains having a diameter of 6 ${\mu}m$ can be set precisely at predetermined positions. We will also discuss the performance of the single-crystalline Si TFTs that are formed within the location-controlled Si grains. The field-effect mobility for electrons is 430 $cm^2/Vs$ on average, which is well comparable to that of TFTs made with silicon-on-insulator wafers.

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A Case of Korean Herbal Medicine Treatment for Normal Tension Glaucoma using Go-Bang (고방을 통한 정상안압 녹내장의 한방치험 1례)

  • Han Gioen;Kang Eunjeong;Lee Guenseob
    • The Journal of Korean Medicine
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    • v.44 no.3
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    • pp.102-116
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    • 2023
  • Objectives: To provide a case report of effective use of Korean herbal medicine treatment to reduce the development and progression of normal-tension glaucoma(NTG). Methods: This case involved a 52-year-old patient who had a history of excimer laser surgery at the age of 25 and was using prescriptions such as Cosopts2 and Xalatan for eye drops. We treated this patient with Korean herbal medicine treatment for 2 years and assessed the progression of NTG based on the optical coherence tomography test results that he recevied at the ophthalmology clinic every 6 months. Results: During the two years of treatment with Korean herbal medicine, it was observed that the progression of NTG was halted. However, after discontinuing the Korean herbal treatment, the progression resumed. Conclusion: Korean herbal medicine treatment was found to be effective in treating normal tension glaucoma, and a minimum treatment period of two years is necessary for an accurate evaluation of NTG.

Study on Fiber Laser Annealing of p-a-Si:H Deposition Layer for the Fabrication of Interdigitated Back Contact Solar Cells (IBC형 태양전지 제작을 위한 p-a-Si:H 증착층의 파이버 레이저 가공에 관한 연구)

  • Kim, Sung-Chul;Lee, Young-Seok;Han, Kyu-Min;Moon, In-Yong;Kwon, Tae-Young;Kyung, Do-Hyun;Kim, Young-Kuk;Heo, Jong-Kyu;Yoon, Ki-Chan;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.430-430
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    • 2008
  • Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

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Photoelectric Properties of PbTe/CuPc Bilayer Thin Films (PbTe/CuPc 이층박막의 광전 특성)

  • Lee, Hea-Yeon;Kang, Young-Soo;Park, Jong-Man;Lee, Jong-Kyu;Jeong, Jung-Hyun
    • Journal of Sensor Science and Technology
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    • v.7 no.1
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    • pp.67-72
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    • 1998
  • The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

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