• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.263-269
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• 2012

Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and $250^{\circ}C$ were explored to find excellent electrical and optical properties. The AZO thin film deposited at $100^{\circ}C$ had the lowest resistivity, $9{\times}10^{-4}{\Omega}$ cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.93-93
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• 2013

In recent years, multifunctional ternary nitride thin films have received extenstive attention due to its versatility in many applications. In particular, noble metal based ternary nitride thin films showed a promising properties in the application of Multifunctional heating resistor films because its good electrical properties and excellent resistance against oxidation and corrosion. In this study, we prepared multifunctional noble metal based ternary nitride thin films by atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) method. ALD and PEALD techniques were used due to their inherent merits such as a precise composition control and large area uniformity, which is very attractive for preparing multicomponent thin films on large area substrate. Here, we will demonstrate the design concept of multifunctional noble metal based ternary thin films. And, the relationship between microstructural evolution and electrical resistivity in noble metal based ternary thin films will be systemically presented. The useful properties of noble metal based ternary thin films including anti-corrosion and anti-oxidation will be discussed in terms of hybrid functionality.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1257-1260
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• 2007

A single-wall carbon nanotube (SWNT) transparent conductive film (TCF) was fabricated using a simple inkjet printing method. The TCF could be selectively patterned by controlling the dot size to diameters as small as $34\;{\mu}m$. In this repeatable and scalable process, we achieved 71% film transmittance and a resistance of 900 ohm/sq sheet with an excellent uniformity, about ${\pm}\;5%$ deviation overall. Inkjet printing of SWNT is substrate friendly and the TCF is printed on a flexible substrate. This method of fabrication using direct printing permits mass production of TCF in a large area process, reducing processing steps and yielding low-cost TCF fabrications on a designated area using simple printing.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.41-45
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• 2015

RtMLF (Routable Molded Lead Frame) based on molded substrate has been developed to maximize advantages of both leadframe product which has high thermal and electrical performance and laminate product which accommodates more I/O count and keeps fan-in/fan-out design flexibility. Due to its structural features, RtMLF provided excellent thermal and electrical performance which was confirmed with simulation. The RtMLF samples were manufactured and its reliability analysis was done to evaluate the opportunities of the production and application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.45-45
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• 2008

In recent years, new materials and technology has been developed using single-walled carbon nanotubes (SWCNTs) as an alternative to indium tin oxide (ITO) to fulfil the requirements towards novel technological drive. These technologies offer products having a broad range of conductivity, excellent transparency, neutral color tone, good adhesion, abrasion resistance as well as mechanical robustness. In addition, SWCNTs can be solution processed to replace the sophisticated vacuum techniques at high temperatures. In the present work, transparent conducting films were fabricated from the purified SWCNTs. Dispersion of purified SWCNTs was accomplished in 1,2-dichlorobenzene without using surfactants or polymers following ultrasonic process. We achieved coating of nanotubes film on poly ether suiphone (PES) for an average sheet resistance ~110 ${\Omega}/{\Box}$ of optical transmittance 80% at 550 nm. Conventional spin coating method was followed to fabricate films from the purified and dispersed nanotubes solution. The results will be presented.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.2 no.1
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• pp.37-49
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• 2008

At the present time the task of designing a highly integrated ZigBee radio frequency (RF) receiver with an excellent coexistence performance is still very demanding and challenging. This paper presents a number of system issues and design considerations for a ZigBee RF receiver, namely IEEE 802.15.4, for coexistence with wireless devices in the 2.4-GHz ISM-band. With regard to IEEE 802.15.4, the paper analyzes receiver performance requirements for; system noise figure (NF), system third-order intercept point (system-IIP3), local oscillator phase noise and selectivity. Based on some assumptions, the paper illustrates the relationship between minimum detectable signal (MDS) and various situations that involve the effects of electromagnetic interference generated by other wireless devices. We infer the necessity of much more stringent specification requirements than the published standard for various wireless communication field environments

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1200-1203
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• 2009

A solution processed polymer tandem cell has been fabricated by using the organic layer coated crystalline $TiO_2$ nanoparticle inter layer. The highly dispersive OL-$TiO_2$ has several advantages in terms of excellent film forming property, crystallinity, optical transparency, and well defined chemical composition. The surface morphology of the $TiO_2$ thin film was found to play a crucial role in the performance of the polymer tandem cell. The stability of the tandem cell, utilizing dense $TiO_2$ nanoparticles inter layer, was superior to the stability of the single junction cell.

• Journal of Information Display
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• v.12 no.1
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• Elastomers and Composites
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• v.55 no.4
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• pp.300-305
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• 2020

In recent times, polymeric foams have been popularly used in various applications. To meet the demand for these applications, polymer foams with excellent mechanical and thermal properties are required. In particular, silicone foam has gained significant attention owing to its superior thermal properties and low density. In this study, the mechanical and thermal properties of silicone foams filled with wollastonite were investigated. A maximum tensile strength of 98.3 kPa was obtained by adding 15 phr of wollastonite. The specific gravity did not exhibit a marked difference up to 10 phr, but it increased substantially above 15 phr wollastonite. Thermogravimetric analysis indicated that adding wollastonite to the silicone foam increased both the amount of residue and the thermal decomposition temperature. The morphologies of the silicone foams filled with wollastonite were observed by scanning electron microscopy.