• 센서학회지
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• 제15권6호
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• pp.457-461
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• 2006

To use the porous silicon as gas sensors, we made the MOPS structure from the porous silicon with Al evaporation and investigated the sensing characteristic of ethanol. When the MOPS structure is in contact with ethanol gas, the maximum peak of PL changes and it return to original intensity without contact. The MOPS structure had response time 0.78s and recovery time 4.13s when it is in contact with ethanol, which satisfied the required sensor standards. Further complimentary researches, however, are required to investigate the contact mechanism between MOPS structure and ethanol and to solve the surface contamination problem.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1469-1471
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• 1997

In this study, Organic electroluminescent(EU devices with multilayer structures were fabricated using tris (8-hydroxy quinolinate) aluminum($Alq_3$) as an electron-tran sporting emitting layer and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine : aromatic diamine) as a hole-transporting layer. A cell with a structure of glass substrate/indium-tin-oxide(ITO)/$Alq_3$/TPD/Mg:In exhibited bright green electroluminescence from the TPD layer. The peak intensity of TPD and $Alq_3$ different from spin coating and vacuum evaporation. The peak emission energy shifts to a higher energy with deposition technique. An emission peak at 500nm was achieved at a driving voltage of 30V.

• Bulletin of the Korean Chemical Society
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• 제33권11호
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• pp.3576-3580
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• 2012

Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.897-902
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• 1998

We prepared Organic LED with a two layer structure by vacuum evaporation. The diode consisted of hole transfer layer (thickness of 30, 50, 70 nm) and electron transfer layer (thickness of 70, 50, 30 nm) material, which was N, N'-diphenyl- N, N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine)(TPD) and tris(8-hydroxy quinoline) aluminum(Alq3), respectively. We investigated EL properties of the LED with various thickness and cathode electrode. The best results were obtained when thickness of the electron layer is equal to that of emission layer and when AlLi alloy was used as a cathode. The EL intensity, luminance and efficiency of organic LED with equal of layer thick were improved seven, three and two times, respectively. Alq3 was ionized by carrier injection from cathode and could produce exitons. After electron-hole pairs were formed by combination of the electrons and holes at the emission layer, Alq3 layer emitted light.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.162-165
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• 2011

In this paper, $CuInSe_2$ thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of $100^{\circ}C$ to $400^{\circ}C$. The film was annealed at $300^{\circ}C$ for an hour in a vacuum chamber at $3{\times}10-4$ Pa. After annealing, the thin film prepared at the substrate temperatures of $100^{\circ}C$ and $200^{\circ}C$ was observed. The XRD (x-ray diffraction) pattern of sample prepared at $100^{\circ}C$ showed the single phase formation of $CuInSe_2$. However, at $200^{\circ}C$, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the sheet resistance was 1.534 $\Omega/\Box$ and 1.554 $\Omega/\Box$, respectively, and the resistivity was $1.76{\times}10-6\;{\Omega}{\cdot}cm$ and $1.7210-6\;{\Omega}{\cdot}cm$, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.

• 한국재료학회지
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• 제18권2호
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.1034-1037
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• 2005

Si (111) 기판 상에 전자빔 증착법으로 Ni, Cr 금속 패턴을 형성시킨 후, 그 금속 패턴 위에 대기 중에서 열 증착법으로 Zn powder를 사용하여 ZnO 나노 구조를 형성시켰다. 형성 시 기판의 온도는 500 ${\sim}$ 700 $^{\circ}$C의 범위에서 설정하였다. 금속 촉매 상에 형성된 ZnO 나노 구조와, Si 기판 상에 형성된 ZnO 나노 구조에서 각각의 형성된 나노 구조의 형상과 이에 따른 나노 구조의 특성 변화를 관찰하였다. 형성된 시료의 발광 특성은 실온에서 He-Cd laser (325 nm)를 이용하여 조사하였고, 금속 패턴 상에 형성된 나노 구조와 Si 기판 상에 형성된 나노 구조의 형상 차이를 광학 현미경과 Scanning Electron Microscope (SEM)을 이용하여 관찰하였다. 그 결과 기판의 온도가 비교적 저온일 때에는 촉매에 의한 영향을 관찰할 수 없었으나 성장 온도가 700 $^{\circ}$ 이상의 고온에서는 금속 촉매가 발광 특성 및 나노 구조의 형상에 영향을 주는 것을 알 수 있었다.

• 한국농림기상학회지
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• 제13권2호
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• pp.56-68
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• 2011

산림에서의 차단강수증발(EWC)은 증발산과 강수에 중요한 기여를 한다. 따라서, 산림에서의 수문순환을 이해하기 위해서는 정확한 $E_{WC}$를 산정하는 것이 중요하다. 본 고찰에서는 $E_{WC}$의 측정방법을 소개하고, 선행 연구에서 보고된 산림형태(예를 들면, 활엽수림, 침엽수림, 혼효림, 열대림)에 따른 $E_{WC}$ 값과 측정시 고려해야 할 사항에 대하여 논의하였다. 전형적인 $E_{WC}$ 측정에는 물 수지, 에너지 수지 및 Penman-Monteith 방법이 있다. 전반적으로, $E_{WC}$는 강수량의 5~54%를 차지하였으며, 같은 산림형태내에서도 $E_{WC}$의 강수량에 대한 기여도는 큰 변동을 보였다. 이러한 변동에는 강수강도, 기상조건, 군락 구조 특성이 영향을 미치는 것으로 나타났다. 따라서 특정 산림형태에서의 $E_{WC}$의 강수량에 대한 기여도를 정량화하는 것은 어려울 것으로 판단된다. 관측시 발생하는 오차는 $E_{WC}$ 정량화의 불확실성을 증대 시킨다. 물수지 방법의 경우, 풍속의 영향을 받는 강수 관측과 군락 구조의 공간적 비균질성의 영향을 받는 수관통과우 등의 관측 오차를 들 수 있다. 에너지 수지 방법의 경우에는 현열 플럭스와 열저류항의 관측이 주요 오차의 원인이 되며, Penman-Monteith 방법은 공기전도도와 현열의 이류 추정에서 발생하는 오차에 주의를 기울여야 한다. 각 측정방법의 오차를 최소화하고 신뢰할 수 있는 $E_{WC}$를 얻기위해서는 수문학적 방법과 미기상학적 방법, 즉 물 수지와 에너지 수지 방법을 함께 사용하는 것이 바람직하다.

• 폴리머
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• 제37권6호
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• pp.702-710
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• 2013

서방성방출을 위해 잘토프로펜을 함유한 미립구를 oil-in-water(O/W) 에멀젼용매 증발법을 이용하여 제조하였다. 제조온도, 교반속도, 초음파분쇄기의 강도, 약물농도, POX의 분자량과 농도, 유화제 농도 등의 제조조건에 따른 잘토프로펜의 방출거동을 평가하였다. 잘토프로펜을 함유한 POX 미립구의 물리화학적 성질 및 형태를 X선 회절분석법(XRD)과 시차주사열량계(DSC), 적외선 분광분석기(FTIR), 주사현미경(SEM)을 통해 연구하였다. 이러한 연구 결과로부터 제조조건들에 따른 미립구의 특성을 확인할 수 있었다. 또한 POX 미립구의 분해성을 10일 동안 in vitro 실험을 통해 조사하였다. 본 연구를 통해 잘토프로펜을 함유한 POX 미립구를 최적화된 용매증발방법으로 제조하였고, 이 미립구로부터 약물의 방출제어를 확인할 수 있었다.