Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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The sensing characteristics of MOPS structure based on porous silicon for ethanol gas

다공질규소를 이용한 MOPS 구조의 에탄올 감지 특성

  • 손신영 (공주대학교 자연과학대학 물리학과) ;
  • 김한중 (공주대학교 자연과학대학 물리학과) ;
  • 이기원 (공주대학교 자연과학대학 물리학과) ;
  • 김영유 (공주대학교 자연과학대학 물리학과)
  • Published : 2006.11.30
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Abstract

To use the porous silicon as gas sensors, we made the MOPS structure from the porous silicon with Al evaporation and investigated the sensing characteristic of ethanol. When the MOPS structure is in contact with ethanol gas, the maximum peak of PL changes and it return to original intensity without contact. The MOPS structure had response time 0.78s and recovery time 4.13s when it is in contact with ethanol, which satisfied the required sensor standards. Further complimentary researches, however, are required to investigate the contact mechanism between MOPS structure and ethanol and to solve the surface contamination problem.

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References

  1. L. T. Canham, 'Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers', Appl. Phys. Lett., vol. 57, pp. 1046-1048, 1990 https://doi.org/10.1063/1.103561
  2. G. D'Arrigo, S. Coffa, and C. Spinella, 'Advanced micromachining processes formicro-opto-electromechanical components and devices', Sensors and Actuators A, vol. 99, pp. 112-118, 2002 https://doi.org/10.1016/S0924-4247(01)00907-4
  3. H. Fall, M. Christophersen, J. Carstensen, and G. Hasse, 'Formation and application of porous silicon', Materials Science and Engineering R, vol. 39, pp. 93-141, 2002 https://doi.org/10.1016/S0927-796X(02)00090-6
  4. C. Baratto, G. Faglia, G. Sberveglieri, Z. Gaburro, L. Pancheri, C. Oton, and L. Pavesi, 'Multiparametric porous silicon sensors', Sensors, vol. 2, pp. 121-126, 2002 https://doi.org/10.3390/s20300121
  5. J. M. Lauerhaas, G. M. Credo, J. L. Heinrich, and M. J. Sailor, 'Reversible luminescence quenching of porous silicon by solvents', J. Am. Chem. Soc., vol. 114, pp. 1911-1912, 1992 https://doi.org/10.1021/ja00031a072
  6. K. Watanabe, 'Organic vapor sensitivity in a porous silicon device', The 8th International Conf. on Solid-state Sensors and Actuators, pp. 890, 1995
  7. I. Ferreira, R. Igreja, E. Fortunato, and R. Martins, 'Porous a.nc-Si:H films produced by HW-CVD as ethanol vapour detector and primary fuel cell', Sensors and Actuators B, vol. 103, pp. 344-349, 2004 https://doi.org/10.1016/j.snb.2004.04.064
  8. W. J. Salcedo, F. Javier, R. Fernandez, and J. C. Rubim, 'Photoluminescence quenching effect on porous silicon films for gas sensors application', Spectrochimica Acta Part A, vol. 60, pp. 1065-1070, 2004 https://doi.org/10.1016/S1386-1425(03)00338-X
  9. T. Chvojka, V. Vrkoslav, I. Jelinek, J. Jindfich, M. Lorenc, and J. Dian, 'Mechanism of photoluminescence sensor response of porous silicon for organic species in gas and liquid phases', Sensors and Actuators B, vol. 100, pp. 246-249, 2004 https://doi.org/10.1016/j.snb.2003.12.040
  10. L. T. Canham, 'Properties of porous silicon', The Institution of Electrical Engineers, London, United Kingdom, pp. 364-370, 1997
  11. 박대규, 이기원, 이수철, 홍사용, 김영유, 신현준, '다공질 규소층과 규소 기판의 계면 영역에 대한 연구', Sae Mulli, vol. 45, pp. 300-304. 2002
  12. 센서표준화위원회, '한국전자산업진흥회규격 EIAK GC-6220 가연성감지센서', 한국전자산업진흥회, 2000