• 제목/요약/키워드: Etching pattern

검색결과 358건 처리시간 0.022초

인산을 적용한 Ultra Definition 디스플레이 패널의 패턴 형성에 관한 연구 (A Study on Pattern Formation of Ultra Definition Display Panel Applying Phosphoric Acid)

  • 김민수;조을룡
    • 반도체디스플레이기술학회지
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    • 제13권3호
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    • pp.13-19
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    • 2014
  • Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

식각 표면패턴의 사출성형에 관한 실험적 연구 (An Experimental Study on Injection Molding of Etched Surface Pattern)

  • ;이희관;양균의
    • 한국정밀공학회지
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    • 제20권2호
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    • pp.25-32
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    • 2003
  • Molding properties of etched surface pattern are presented. Injection molding has given attention on improving dimensional accuracy and productivity. However, the molding of etched surface pattern on plastic parts is not researched relatively for its additional values, which can meet design function and customer's attraction. Specimens, whose surface patterns are made by print-type etching, are investigated. The molding properties of surface pattern are estimated with roughness deviation of surface pattern on part and mold. The etching properties are related to physical properties of plastic materials and surface roughness of etched pattern. Also, flow mark and gate location can give influence on surface pattern molding. The experimental result can contribute to good molding of surface pattern in injection molding.

차세대 노광공정용 Ta박막의 $0.2\mu\textrm{m}$ 미세패턴 식각특성 연구 (Study on the Etching Characteristics of $0.2\mu\textrm{m}$ fine Pattern of Ta Thin film for Next Generation Lithography Mask)

  • 우상균;김상훈;주섭열;안진호
    • 한국재료학회지
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    • 제10권12호
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    • pp.819-824
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    • 2000
  • 본 연구에서는 Electron Cyclotron Resonance plasma etching system 을 이용한 Ta 박막의 미세 식각 특성을 연구하였다. 염소 plasma를 사용하여 microwave power, RF Power, working pressure, gas chemistry 등의 변화에 따른 식각 profile의 영향을 조사하였고, pattern density가 증가함에 따라 발생하는 microloading 현상을 $0.2{\mu\textrm{m}}$ 이하의 패턴에서 확인 하였다. 이를 개선하기 위하여 식각 과정을 두 단계로 분리하는 2단계 식각 공정을 수행하였으며 이를 통해 우수한 식각 profile을 얻을 수 있었다.

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식각 표면패턴의 사출성형에 관한 실험적 연구 (An Experimental Study on Injection Molding of Etched Surface Pattern)

  • 황금종;이희관;양균의
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 춘계학술대회 논문집
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    • pp.583-586
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    • 2002
  • Molding properties of etched surface pattern are presented. Specimens, whose surface patterns are made by print-type etching, are investigated. The molding properties of surface pattern are estimated with roughness deviation of surface pattern on part and mold. The etching properties are related to physical properties of plastic materials and surface roughness of etched pattern. Also, flow mark and gate location can give influence on surface pattern molding. The experimental result can contribute to good molding of surface pattern in injection molding.

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수종의 All-Etching Agent와 산부식시간에 따른 법랑질 산부식형태 및 전단 결합강도에 관한 연구 (THE EFFECTS OF VARIOUS ALL-ETCHING AGENTS AND VARIED ETCHING TIME ON ENAMEL MORPHOLOGY AND BOND STRENGTH)

  • 권소란;윤태현;박동수
    • Restorative Dentistry and Endodontics
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    • 제21권1호
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    • pp.136-149
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    • 1996
  • The effects of various All-Etching Agents (10% phosphoric acid, 10% maleic acid and 10 % citric acid) and 32 % phosphoric acid and varied etching time were evaluated by observing the morphology of the etched enamel surfaces using Scanning electron microscopy and by measuring the shear bond strength of a composite resin to human enamel. A total of 156 extracted premolar and molar teeth free of irregularities were employed in this study. Specimens for the observation of enamel morphology were divided into 12 groups of 3 teeth each, based on the type of etchant used and application time. After exposure to the etching agent specimens were washed air-dried and then glued to aluminum stubs and coated with a layer of gold for examination in the scanning electron microscope. Specimens for the evaluation of bond strength were divided into 12 groups of 10 teeth each also based on the type of etchant used and application time. After exposure to the etching agent the specimens were washed, air-dried and a thin layer of bonding agent was applied using a brush. Z 100 composite resin was light cured to the surface and stored at $37^{\circ}C$, 100% humidity for 7 days. An Instron Universal Testing Machine was used to apply a shearing force at $90^{\circ}$ angle from the enamel surface. It is concluded from this study that commercial All-etching agents can be used with a 15-second etching without adversely affecting retention of dental resin materials. At the same time, the acid concentration is probably a suitable compromise regarding the acid's function as a dentin demineralizing all-etch conditioning agent. The following results were obtained. 1. Specimens etched with 10 % citric acid showed a random superficial etching pattern which could not be related to prism morphology. 2. Specimens etched with 10 % and 32 % phosphoric acid and 10 % maleic acid showed a type I pattern in which core material was preferentially removed leaving the prism peripheries relatively intact or a type II pattern in which prism peripheries were preferentially removed. This delineation became more distinguished as etching time was increased. 3. All-Etching Agents and 32 % phosphoric acid showed a statistically significant higher shear bond strength at 15 seconds etching time.(p<0.05) 4. 10 % maleic acid and 32 % phosphoric acid exhibited a statistically significant higher shear bond strength than 10 % phosphoric and citric acid at 15 seconds etching time.(p<0.05).

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무전해 Ni 도금을 위한 양극 산화막위에 스크린 인쇄된 Ag 페이스트 패턴의 정밀도 개선 (Accuracy Improvement of Screen Printed Ag Paste Patterns on Anodized Al for Electroless Ni Plating)

  • 이연승;나사균
    • 한국재료학회지
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    • 제27권8호
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    • pp.397-402
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    • 2017
  • We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

감광성 결정화유리를 이용한 미세 구조물 제조에 대한 연구 (The Fabrication of Micro-framework Using Photosensitive Glass-ceramics)

  • 김형준;이상훈;연석주;최성철
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.82-89
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    • 2000
  • In lithium silicate photosensitive glass-ceramics, the relationship between lithography time and crystallization, and the effect of addition of mineral acid in etching rate and pattern shape were investigated. Irradiation times for micropatterning were less than 5 minutes in which Ce3+ ions in glass were changed rapidly to Ce4+ with ultra violet light. Overexposure to ultra brought about blot of pattern by diffiraction of light. Addition of mineral acid to HF enhanced etching rate as compared with HF solution only. The addition of H2SO4 especially increased the etching rate by 70%. But the mixed solution also increased the etching rate of the noncrystallized portion of the glass and this resulted in heavy etching. Etching with ultrasonic wave showed higher etching rate than that with the static or fluid method.

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불규칙 패턴 에칭에 의한 표면 형상 제어와 광학적 특성 (Optical Property and Surface Morphology Control by Randomly Patterned Etching)

  • 김성수;이정우;전법주
    • 한국전기전자재료학회논문지
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    • 제30권12호
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    • pp.800-805
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    • 2017
  • Randomly patterned and wet chemical etching processes were used to treat anti-glare of display cover glasses. The surface and optical properties of grain size and surface morphology controlled by randomly patterned etching and wet chemical solution etching were investigated. The surface morphology and roughness of the etched samples were examined using a spectrophotometer and a portable surface roughness (Ra) measuring instrument, respectively. The gloss caused by reflection from the glass surface was measured at $60^{\circ}$ using a gloss meter. The surface of the sample etched by the doctor-blade process was more uniform than that obtained from a screen pattern etching process at gel state etching process of the first step. The surface roughness obtained from the randomly patterned etching process depended greatly on the mesh size, which in turn affected the grain size and pattern formation. The surface morphology and gloss obtained by the etching process in the second step depended primarily on the mesh size of the gel state etching process of the first step. In our experimental range, the gloss increased on decreasing the grain size at a lower mesh size for the first step process and for longer reaction times for the second step process.

Photo lithography을 이용한 플라즈마 에칭 가공특성에 관한 연구 (A study on processing characteristics of plasma etching using photo lithography)

  • 백승엽
    • Design & Manufacturing
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    • 제12권1호
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    • pp.47-51
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    • 2018
  • As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.