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A Study on Pattern Formation of Ultra Definition Display Panel Applying Phosphoric Acid  

Kim, Min-Su (School of Energy.Materials.Chemical Engineering, Korea University of Education & Technology)
Cho, Ur Ryong (School of Energy.Materials.Chemical Engineering, Korea University of Education & Technology)
Publication Information
Journal of the Semiconductor & Display Technology / v.13, no.3, 2014 , pp. 13-19 More about this Journal
Abstract
Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.
Keywords
ultra definition display; pattern formation; phosphoric acid; etching; low skew;
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